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21 February 2024
Enhanced piezoelectric performance of Cr/Ta non-equivalent co-doped Bi4Ti3O12-based high-temperature piezoceramics
),
Yejing Dai(
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In this study, (Cr1/3/Ta2/3) non-equivalent co-doped Bi4Ti3O12 (BIT) ceramics were prepared to solve the problem that high piezoelectric performance, high Curie temperature, and high-temperature resistivity could not be achieved simultaneously in BIT-based ceramics. A series of Bi4Ti3−x(Cr1/3Ta2/3)xO12 (x = 0–0.04) ceramics were synthesized by the solid-state reaction method. The phase structure, microstructure, piezoelectric performance, and conductive mechanism of the samples were systematically investigated. The B-site non-equivalent co-doping strategy combining high-valence Ta5+ and low-valence Cr3+ significantly enhances electrical properties due to a decrease in oxygen vacancy concentration. Bi4Ti2.97(Cr1/3Ta2/3)0.03O12 ceramics exhibit a high piezoelectric coefficient (d33 = 26 pC·N−1) and a high Curie temperature (TC = 687 ℃). Moreover, the significantly increased resistivity (ρ = 2.8×106 Ω·cm at 500 ℃) and good piezoelectric stability up to 600 ℃ are also obtained for this composition. All the results demonstrate that Cr/Ta co-doped BIT-based ceramics have great potential to be applied in high-temperature piezoelectric applications.
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Enhanced piezoelectric performance of Cr/Ta non-equivalent co-doped Bi4Ti3O12-based high-temperature piezoceramics
), Yejing Dai(
)
Abstract
In this study, (Cr1/3/Ta2/3) non-equivalent co-doped Bi4Ti3O12 (BIT) ceramics were prepared to solve the problem that high piezoelectric performance, high Curie temperature, and high-temperature resistivity could not be achieved simultaneously in BIT-based ceramics. A series of Bi4Ti3−x(Cr1/3Ta2/3)xO12 (x = 0–0.04) ceramics were synthesized by the solid-state reaction method. The phase structure, microstructure, piezoelectric performance, and conductive mechanism of the samples were systematically investigated. The B-site non-equivalent co-doping strategy combining high-valence Ta5+ and low-valence Cr3+ significantly enhances electrical properties due to a decrease in oxygen vacancy concentration. Bi4Ti2.97(Cr1/3Ta2/3)0.03O12 ceramics exhibit a high piezoelectric coefficient (d33 = 26 pC·N−1) and a high Curie temperature (TC = 687 ℃). Moreover, the significantly increased resistivity (ρ = 2.8×106 Ω·cm at 500 ℃) and good piezoelectric stability up to 600 ℃ are also obtained for this composition. All the results demonstrate that Cr/Ta co-doped BIT-based ceramics have great potential to be applied in high-temperature piezoelectric applications.
References(55)
Sebastian T, Kozielski L, Erhart J. Co-sintered PZT ceramics for the piezoelectric transformers. Ceram Int 2015, 41: 9321–9327.
Peng GG, Zheng DY, Cheng C, et al. Effect of rare-earth addition on morphotropic phase boundary and relaxation behavior of the PNN–PZT ceramics. J Alloys Compd 2017, 693: 1250–1256.
Huan Y, Hou LM, Wei T, et al. High-performance (K,Na)NbO3-based multilayer piezoelectric ceramic actuators with nickel inner electrodes. J Adv Ceram 2023, 12: 1228–1237.
Lai LX, Zhao ZH, Tian S, et al. Ultrahigh electrostrain with excellent fatigue resistance in textured Nb5+-doped (Bi0.5Na0.5)TiO3-based piezoceramics. J Adv Ceram 2023, 12: 487–497.
Takenaka T, Gotoh T, Mutoh S, et al. A new series of bismuth layer-structured ferroelectrics. Jpn J Appl Phys 1995, 34: 5384.
Moure A. Review and perspectives of Aurivillius structures as a lead-free piezoelectric system. Appl Sci 2018, 8: 62.
Withers RL, Thompson JG, Rae AD. The crystal chemistry underlying ferroelectricity in Bi4Ti3O12, Bi3TiNbO9, and Bi2WO6. J Solid State Chem 1991, 94: 404–417.
Subbarao EC. A family of ferroelectric bismuth compounds. J Phys Chem Solids 1962, 23: 665–676.
Supriya S. Tailoring layered structure of bismuth-based Aurivillius perovskites: Recent advances and future aspects. Coord Chem Rev 2023, 479: 215010.
Supriya S. Bi4Ti3O12 electroceramics: Effect of doping, crystal structure mechanisms and piezoelectric response. J Korean Ceram Soc 2023, 60: 451–461.
Newnham RE, Wolfe RW, Dorrian JF. Structural basis of ferroelectricity in the bismuth titanate family. Mater Res Bull 1971, 6: 1029–1039.
Dorrian JF, Newnham RE, Smith DK, et al. Crystal structure of Bi4Ti3O12. Ferroelectrics 1972, 3: 17–27.
Xie XC, Wang TZ, Zhou ZY, et al. Enhanced piezoelectric properties and temperature stability of Bi4Ti3O12-based Aurivillius ceramics via W/Nb substitution. J Eur Ceram Soc 2019, 39: 957–962.
Shulman HS, Damjanovic D, Setter N. Niobium doping and dielectric anomalies in bismuth titanate. J Am Ceram Soc 2000, 83: 528–532.
Babooram K, Chin DK, Ye ZG. Ferroelectric Bi4Ti3O12 and Bi4− x La x Ti3O12 ceramics prepared by a new sol–gel route. J Electroceram 2008, 21: 43–48.
Supriya S. Influence of rare earth coordinated elements in titanium-based pyrochlores and their dielectric phenomena. Coord Chem Rev 2023, 493: 215319.
Supriya S. A critical review on crystal structure mechanisms, microstructural and electrical performances of Bi0.5Na0.5TiO3−SrTiO3 perovskites. J Electroceram 2022, 49: 94–108.
Supriya S. Effect of doping and enhanced microstructures of bismuth titanates as Aurivillius perovskites. Micron 2022, 162: 103344.
Jiang DW, Zhou ZY, Liang RH, et al. Highly orientated Bi4Ti3O12 piezoceramics prepared by pressureless sintering. J Eur Ceram Soc 2021, 41: 1244–1250.
Shulman HS, Testorf M, Damjanovic D, et al. Microstructure, electrical conductivity, and piezoelectric properties of bismuth titanate. J Am Ceram Soc 1996, 79: 3124–3128.
Villegas M, Caballero AC, Moure C, et al. Low-temperature sintering and electrical properties of chemically W-doped Bi4Ti3O12 ceramics. J Eur Ceram Soc 1999, 19: 1183–1186.
Xie XC, Zhou ZY, Gao BT, et al. Ion-pair engineering-induced high piezoelectricity in Bi4Ti3O12-based high-temperature piezoceramics. ACS Appl Mater Interfaces 2022, 14: 14321–14330.
Li XD, Chen ZN, Sheng LS, et al. Remarkable piezoelectric activity and high electrical resistivity in Cu/Nb co-doped Bi4Ti3O12 high temperature piezoelectric ceramics. J Eur Ceram Soc 2019, 39: 2050–2057.
Li XD, Chen ZN, Sheng LS, et al. Large enhancement of piezoelectric properties and resistivity in Cu/Ta co-doped Bi4Ti3O12 high-temperature piezoceramics. J Am Ceram Soc 2019, 102: 7366–7375.
Xie XC, Zhou ZY, Liang RH, et al. Significantly enhanced piezoelectric performance in Bi4Ti3O12-based high-temperature piezoceramics via oxygen vacancy defects tailoring. J Materiomics 2021, 7: 59–68.
Chen Y, Liang DY, Wang QY, et al. Microstructures, dielectric, and piezoelectric properties of W/Cr co-doped Bi4Ti3O12 ceramics. J Appl Phys 2014, 116: 074108.
Tang YX, Shen ZY, Du QX, et al. Enhanced pyroelectric and piezoelectric responses in W/Mn-codoped Bi4Ti3O12 Aurivillius ceramics. J Eur Ceram Soc 2018, 38: 5348–5353.
Peng ZH, Chen Q, Chen Y, et al. Microstructure and electrical properties in W/Nb co-doped Aurivillius phase Bi4Ti3O12 piezoelectric ceramics. Mater Res Bull 2014, 59: 125–130.
Wu JG, Gao XY, Chen JG, et al. Review of high temperature piezoelectric materials, devices, and applications. Acta Phys Sin 2018, 67: 207701.
Supriya S. Synthesis mechanisms and effects of BaTiO3 doping on the optical properties of Bi0.5Na0.5TiO3 lead-free ceramics. J Solid State Chem 2022, 308: 122940.
Shannon RD. Revised effective ionic radii and systematic studies of interatomic distances in halides and chalcogenides. Acta Crystallogr A 1976, 32: 751–767.
Zhang FF, Xu YG, Yang H, et al. Effects of cerium on structures and electrical properties of (Nb,Ta) modified Bi4Ti3O12 piezoelectric ceramics. J Am Ceram Soc 2022, 105: 4161–4170.
Du XF, Chen IW. Ferroelectric thin films of bismuth-containing layered perovskites: Part II, PbBi2Nb2O9. J Am Ceram Soc 1998, 81: 3260–3264.
Shrinagar A, Garg A, Prasad R, et al. Phase stability in ferroelectric bismuth titanate: A first-principles study. Acta Crystallogr A 2008, 64: 368–375.
Kumar JP, Sekhar KSKRC, Rao TD, et al. Effect of sintering temperature on structural, dielectric, and electrical property studies of Bi4NdTi3FeO15 Aurivillius ceramics. J Mater Sci Mater Electron 2021, 32: 9675–9684.
Graves PR, Hua G, Myhra S, et al. The Raman modes of the Aurivillius phases: Temperature and polarization dependence. J Solid State Chem 1995, 114: 112–122.
Kojima S, Imaizumi R, Hamazaki S, et al. Raman scattering study of bismuth layer-structure ferroelectrics. Jpn J Appl Phys 1994, 33: 5559.
Sekhar KSKRC, Rao SR, Rayaprol S, et al. Observation of multiferroic character with the correlation of dielectric and optical study in Ho3+ substituted Bi4Ti2FeO12 Aurivillius ceramic. Appl Phys A 2022, 128: 905.
Patri T, Praveen Kumar J, Ghosh A, et al. Tunable polarization with enhanced multiferroic response of W/Co co-doped Bi4LaFeTi3O15 Aurivillius ceramics. J Appl Phys 2020, 128: 154102.
Patri T, Durga Rao T, Chandra Sekhar KSKR, et al. Correlation of structural, microstructural, dielectric, and impedance properties in Nd doping on Bi4Ti2FeO12 multiferroic Aurivillius ceramic. Phys Status Solidi B 2022, 259: 2200223.
Wu J, Qin N, Lin EZ, et al. Synthesis of Bi4Ti3O12 decussated nanoplates with enhanced piezocatalytic activity. Nanoscale 2019, 11: 21128–21136.
Santara B, Giri PK, Dhara S, et al. Oxygen vacancy-mediated enhanced ferromagnetism in undoped and Fe-doped TiO2 nanoribbons. J Phys D: Appl Phys 2014, 47: 235304.
Qi TT, Grinberg I, Rappe AM. Correlations between tetragonality, polarization, and ionic displacement in PbTiO3-derived ferroelectric perovskite solid solutions. Phys Rev B 2010, 82: 134113.
Suárez DY, Reaney IM, Lee WE. Relation between tolerance factor and Tc in Aurivillius compounds. J Mater Res 2001, 16: 3139–3149.
Liu ZH, Wu H, Yuan Y, et al. Recent progress in bismuth-based high Curie temperature piezo-/ferroelectric perovskites for electromechanical transduction applications. Curr Opin Solid State Mater Sci 2022, 26: 101016.
Jiang AQ, Li GH, Zhang LD. Dielectric study in nanocrystalline Bi4Ti3O12 prepared by chemical coprecipitation. J Appl Phys 1998, 83: 4878–4883.
Long CB, Fan HQ, Li MM, et al. Crystal structure and enhanced electromechanical properties of Aurivillius ferroelectric ceramics, Bi4Ti3− x (Mg1/3Nb2/3) x O12. Scripta Mater 2014, 75: 70–73.
Zhao YW, Fan HQ, Dong GZ, et al. Enhanced electromechanical properties and conduction behaviors of Aurivillius Bi4Ti2.95(B1/3Nb2/3)0.05O12 (B = Mg, Zn, Cu) ceramics. Mater Lett 2016, 174: 242–245.
Nie R, Yuan J, Zhu JG. Influence of co-modification with tungsten and tantalum on the crystal structure and electrical properties of bismuth titanate ceramics. J Mater Sci Mater Electron 2019, 30: 14445–14455.
Li XD, Zhu LL, Huang PM, et al. Reduction of oxygen vacancy concentration and large enhancement of electrical performances in Cu/Sb co-doped Bi4Ti3O12 high temperature piezoelectric ceramics. J Appl Phys 2020, 127: 044102.
Zhao ZH, Dai YJ, Huang F. The formation and effect of defect dipoles in lead-free piezoelectric ceramics: A review. Sustain Mater Tech 2019, 20: e00092.
Zhang HT, Yan HX, Reece MJ. The effect of Nd substitution on the electrical properties of Bi3NbTiO9 Aurivillius phase ceramics. J Appl Phys 2009, 106: 044106.
Takahashi M, Noguchi Y, Miyayama M. Electrical conduction mechanism in Bi4Ti3O12 single crystal. Jpn J Appl Phys 2002, 41: 7053–7056.
Masó N, West AR. Electrical properties of Ca-doped BiFeO3 ceramics: From p-type semiconduction to oxide-ion conduction. Chem Mater 2012, 24: 2127–2132.
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Acknowledgements
This work is financially supported by the National Natural Science Foundation of China (No. 52172135), the Youth Top Talent Project of the National Special Support Program (No. 2021-527-07), the Leading Talent Project of the National Special Support Program (No. 2022WRLJ003), and the Guangdong Basic and Applied Basic Research Foundation for Distinguished Young Scholars (Nos. 2022B1515020070 and 2021B1515020083).
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