Research progress on GaN-based dual-mode devices and their applications in embodied intelligence

The physical implementation of embodied intelligence depends on high-performance, energy-efficient, and reliable hardware systems that are deeply integrated with physical bodies. Gallium nitride (GaN) is a key material from the third generation of wide-bandgap semiconductors. It provides an ideal material platform for developing new multi-functional integrated devices thanks to its inherent advantages, including optoelectronic integration, high electron mobility, and a high breakdown electric field. GaN-based dual-mode devices integrate two or more dynamically switchable functional modes in a single physical structure. These devices offer a new way to overcome the hardware limitations in embodied intelligence, especially in sensing, computing, communication, and actuation. This review provides a systematic overview of recent progress in GaN-based dual-mode devices for supporting embodied intelligence. It explains the core operational mechanisms and application goals of these devices and analyzes the physical mechanisms that enable them to perform dual-mode functions. These mechanisms allow the devices to smoothly switch between different roles, such as fast detection and slow memory, high power output and high energy efficiency, and signal transmission and reception. In addition, this review highlights the potential of GaN dual-mode devices in practical applications of embodied intelligence and suggests future research directions for their use in large-scale systems.