Based on on-chip real-time monitoring with adaptive compensation for anti-total dose bandgap reference

Bipolar transistor base current leakage and a drop in current gain will occur in bandgap reference circuits exposed to total dose radiation. This will cause the output voltage of the bandgap reference to move and its dependability to decline. To address the issues of high cost, large layout area, and low universality that traditional total dose reinforcement methods for bandgap references based on process, layout, and device can bring, this method is suggested. An on-chip total dose real-time monitoring and adaptive compensation method is proposed to realize circuit-level total dose reinforcement and improve the radiation resistance of bandgap references. Based on the 0.18 μm BCD (Bipolar-CMOS-DMOS) process, specific circuit design, back-end physical implementation and comprehensive verification of the proposed method are carried out. Under radiation conditions of 100−300 krad (Si) under various process angles, the results demonstrate that the output voltage offset of the bandgap reference is improved from 3.4−18.5 mV voltage offset (100−300 krad) prior to reinforcement to the maximum offset voltage following reinforcement, which is 1 mV (100−300 krad). This provides a new method for designing irradiation-resistant reinforcement of bandgap references at the circuit and system levels.