Atomic layer deposition for nanoscale oxide semiconductor thin film transistors: review and outlook

Since the first report of amorphous In–Ga–Zn–O based thin film transistors, interest in oxide semiconductors has grown. They offer high mobility, low off-current, low process temperature, and wide flexibility for compositions and processes. Unfortunately, depositing oxide semiconductors using conventional processes like physical vapor deposition leads to problematic issues, especially for high-resolution displays and highly integrated memory devices. Conventional approaches have limited process flexibility and poor conformality on structured surfaces. Atomic layer deposition (ALD) is an advanced technique which can provide conformal, thickness-controlled, and high-quality thin film deposition. Accordingly, studies on ALD based oxide semiconductors have dramatically increased recently. Even so, the relationships between the film properties of ALD-oxide semiconductors and the main variables associated with deposition are still poorly understood, as are many issues related to applications. In this review, to introduce ALD-oxide semiconductors, we provide: (a) a brief summary of the history and importance of ALD-based oxide semiconductors in industry, (b) a discussion of the benefits of ALD for oxide semiconductor deposition (in-situ composition control in vertical distribution/vertical structure engineering/chemical reaction and film properties/insulator and interface engineering), and (c) an explanation of the challenging issues of scaling oxide semiconductors and ALD for industrial applications. This review provides valuable perspectives for researchers who have interest in semiconductor materials and electronic device applications, and the reasons ALD is important to applications of oxide semiconductors.