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A Highly Linear Low-Voltage Source-Degeneration Transconductor Based on Unity-Gain Buffer

Yaohui KONGAirong LIUHuazhong YANG( )
Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
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Abstract

A complementary metal oxide semiconductor (CMOS) transconductor based on a high performance unity-gain buffer driving the degeneration resistor was used to obtain a highly linear voltage-to-current conversion with considerable reduction of the supply voltage. Simulations show that the transconductor using an 0.18-μm standard CMOS process with a 1.2-V supply voltage has less than -80 dB total harmonic distortion (THD) for a 1-MHz 0.4-Vp-p differential input signal. The third-order intermodulation is less than -63 dB for 0.25 Vp-p differential inputs at 1 MHz. The DC power consumption in the transconductor core is 240 μW. This topology is a feasible solution for low voltage and low power applications.

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Tsinghua Science and Technology
Pages 698-702

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Cite this article:
KONG Y, LIU A, YANG H. A Highly Linear Low-Voltage Source-Degeneration Transconductor Based on Unity-Gain Buffer. Tsinghua Science and Technology, 2009, 14(6): 698-702. https://doi.org/10.1016/S1007-0214(09)70137-3

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Received: 10 October 2008
Revised: 04 June 2009
Published: 01 December 2009
© Tsinghua University Press 2009