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Review | Open Access

Progress on rare-earth doped ZnO-based varistor materials

Feng JIANGa, Zhijian PENGa,*( ), Yanxu ZANGa, Xiuli FUb,*( )
School of Engineering and Technology, China University of Geosciences, Beijing 100083, P.R. China
School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, P.R. China
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Abstract

Rare-earth (RE) doping can greatly enhance the voltage gradient of ZnO-based varistors, and their nonlinear coefficient, leakage current, energy absorption capability, through-current capability and residual voltage can also be improved to certain extent. In this review, the progress on RE-doped ZnO-based varistor materials in recent years was summarized. The mechanism of RE doping on the electrical performance of ZnO varistors was analyzed. The issues in exploring new ZnO-based varistor materials by RE doping were indicated, and the development trends in this area were proposed.

Keywords

ZnO varistorrare-earth (RE)doping

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Journal of Advanced Ceramics
Volume 2 Issue 3,
September 2013
Pages 201-212
DOI: 10.1007/s40145-013-0071-z

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Cite this article:
JIANG F, PENG Z, ZANG Y, et al. Progress on rare-earth doped ZnO-based varistor materials. Journal of Advanced Ceramics, 2013, 2(3): 201-212. https://doi.org/10.1007/s40145-013-0071-z

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Received: 16 May 2013
Accepted: 21 May 2013
Published: 07 September 2013
© The author(s) 2013

Open Access: This article is distributed under the terms of the Creative Commons Attribution Noncommercial License which permits any noncommercial use, distribution, and reproduction in any medium, provided the original author(s) and source are credited.