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Journal of Advanced Ceramics 2013, 2(3): 201-212 https://doi.org/10.1007/s40145-013-0071-z
Review | Open Access | Issue | Published: 07 September 2013

Progress on rare-earth doped ZnO-based varistor materials

Show Author's Information Feng JIANGa,  Zhijian PENGa,*( ),  Yanxu ZANGa,  Xiuli FUb,*( )
School of Engineering and Technology, China University of Geosciences, Beijing 100083, P.R. China
School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, P.R. China
Keywords:
doping, ZnO varistor, rare-earth (RE)
Cite this article:
JIANG F, PENG Z, ZANG Y, et al. Progress on rare-earth doped ZnO-based varistor materials. Journal of Advanced Ceramics, 2013, 2(3): 201-212. https://doi.org/10.1007/s40145-013-0071-z
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Abstract Full text About this article

Rare-earth (RE) doping can greatly enhance the voltage gradient of ZnO-based varistors, and their nonlinear coefficient, leakage current, energy absorption capability, through-current capability and residual voltage can also be improved to certain extent. In this review, the progress on RE-doped ZnO-based varistor materials in recent years was summarized. The mechanism of RE doping on the electrical performance of ZnO varistors was analyzed. The issues in exploring new ZnO-based varistor materials by RE doping were indicated, and the development trends in this area were proposed.


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About this article

Progress on rare-earth doped ZnO-based varistor materials

Show Author's information Feng JIANGa, Zhijian PENGa,*( ), Yanxu ZANGa, Xiuli FUb,*( )
School of Engineering and Technology, China University of Geosciences, Beijing 100083, P.R. China
School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, P.R. China

Abstract

Rare-earth (RE) doping can greatly enhance the voltage gradient of ZnO-based varistors, and their nonlinear coefficient, leakage current, energy absorption capability, through-current capability and residual voltage can also be improved to certain extent. In this review, the progress on RE-doped ZnO-based varistor materials in recent years was summarized. The mechanism of RE doping on the electrical performance of ZnO varistors was analyzed. The issues in exploring new ZnO-based varistor materials by RE doping were indicated, and the development trends in this area were proposed.

Keywords: doping, ZnO varistor, rare-earth (RE)

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Publication history
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Acknowledgements
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Publication history

Received: 16 May 2013
Accepted: 21 May 2013
Published: 07 September 2013
Issue date: September 2013

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© The author(s) 2013

Acknowledgements

The authors would like to thank the financial support for this work from the National Natural Science Foundation of China (Grant Nos. 61274015, 11274052 and 51172030), the Transfer and Industrialization Project of Sci-Tech Achievement (Cooperation Project between University and Factory) from Beijing Municipal Commission of Education, and the Excellent Adviser Foundation in China University of Geosciences from the Fundamental Research Funds for the Central Universities.

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