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Research Article

Pure-blue emissive ZnSe/CdxZn1−xS/ZnS quantum dots with type-II core-shell structure for display application

Mingrui Liu1, Chenhui Wang2, Peng Huang1, Jinhua He1, Muhammad Ramzan1, Haizheng Zhong1( )
MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
Beijing Engineering Research Center for Mixed Reality and Advanced Display Technology, School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China
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Graphical Abstract

Pure-blue emissive ZnSe/CdxZn1−xS/ZnS quantum dots with type-II core-shell structure show high photoluminescence quantum yield (PLQY) over 90% from 444 to 479 nm.

Abstract

Blue emissive quantum dots are key materials in fabricating quantum-dot light-emitting diodes for display applications. Up to date, most of the previous blue emissive quantum dots are based on quantum dots with type-I core-shell structure. In this work, we report pure-blue emissive ZnSe/CdxZn1−xS/ZnS quantum dots with type-II core-shell structure, which show high photoluminescence quantum yield over 90%. The type-II structure was investigated by applying time-resolved photoluminescence and transient absorption measurements, illustrating the extended photoluminescence decay lifetime of ZnSe/CdxZn1−xS quantum dots as well as the transition of bleaching peak from the valence band of ZnSe to the conduction band of CdZnS. We further fabricated ZnSe/CdxZn1−xS/ZnS quantum dots based electroluminescence devices, achieving a maximum external quantum efficiency of 6.7% and a maximum luminance of 39,766 cd·m−2.

Keywords

quantum dotsblue emittertype-IIdisplaycore shell

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Nano Research
Volume 17 Issue 12,
December 2024
Pages 10476-10482
DOI: 10.1007/s12274-024-7106-3
Cite this article:
Liu M, Wang C, Huang P, et al. Pure-blue emissive ZnSe/CdxZn1−xS/ZnS quantum dots with type-II core-shell structure for display application. Nano Research, 2024, 17(12): 10476-10482. https://doi.org/10.1007/s12274-024-7106-3
Topics:
SemiconductorSynthesisNano device

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Received: 26 September 2024
Revised: 01 November 2024
Accepted: 01 November 2024
Published: 16 November 2024
© Tsinghua University Press 2024
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