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Nano Research 2024, 17(6): 5569-5577 https://doi.org/10.1007/s12274-024-6477-9
Research Article | Issue | Published: 02 March 2024

Plasmon-enhanced self-powered GaN/ZnTe core/shell nanopillar array photodetector

Show Author's Information Jianqi Dong1,  Dongqi Zhang2,  Yi Ma1,  Daotong You3,  Jinping Chen1,  Bin Liu2,  Xingfu Wang4,  Zengliang Shi1( ),  Chunxiang Xu1( )
State Key Laboratory of Digital Medical Engineering, School of Biological Science and Medical Engineering, Southeast University, Nanjing 210096, China
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
Institute of Photonics Technology, Jinan University, Guangzhou 510632, China
Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou 510631, China
Keywords:
plasmonic effect, GaN/ZnTe core/shell, nanopillar array, ultraviolet/visible photodetector, self-power
Topics:
PhotodetectorsPlasma applicationsSemiconductor device manufacture Semiconductor devices Semiconductor junctions
Cite this article:
Dong J, Zhang D, Ma Y, et al. Plasmon-enhanced self-powered GaN/ZnTe core/shell nanopillar array photodetector. Nano Research, 2024, 17(6): 5569-5577. https://doi.org/10.1007/s12274-024-6477-9
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Abstract Full text Electronic supplementary material About this article

Nanostructure photodetectors, as the core component of optoelectronic devices, are mainly focused on the precise preparation of mixed-component nano-heterostructures and the realization of zero power consumption devices. Herein, we successfully fabricated n-GaN/p-ZnTe core/shell nanopillar array and realized self-power ultraviolet/violet photodetection. The radial heterojunction nanodevice reveals high light-dark current ratio of 104 at 0 V bias, indicating effective carriers’ separation. And more, by integrating plasmonic effect, the responsivity and detectivity of the Au nanoparticles decorated device are increased from 3.85 to 148.83 mA/W and 4.45×1011 to 2.33 × 1012 Jones under 325 nm UV light irradiation. While the rise and the fall time are decreased 1.3 times and 6.8 times under 520 nm visible light irradiation at 0 V bias. The high photocurrent gain is derived from that the oscillating high-energy hot electrons in Au nanoparticles spontaneously inject into the ZnTe conduction band to involve the photodetection process. This work presents an effective route to prepare high-performance self-power photodetector and provides a promising blueprint to realize different functional photoelectronic devices based on core/shell nanostructure.


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Electronic supplementary material
About this article

Plasmon-enhanced self-powered GaN/ZnTe core/shell nanopillar array photodetector

Show Author's information Jianqi Dong1, Dongqi Zhang2, Yi Ma1, Daotong You3, Jinping Chen1, Bin Liu2, Xingfu Wang4, Zengliang Shi1( ), Chunxiang Xu1( )
State Key Laboratory of Digital Medical Engineering, School of Biological Science and Medical Engineering, Southeast University, Nanjing 210096, China
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
Institute of Photonics Technology, Jinan University, Guangzhou 510632, China
Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou 510631, China

Abstract

Nanostructure photodetectors, as the core component of optoelectronic devices, are mainly focused on the precise preparation of mixed-component nano-heterostructures and the realization of zero power consumption devices. Herein, we successfully fabricated n-GaN/p-ZnTe core/shell nanopillar array and realized self-power ultraviolet/violet photodetection. The radial heterojunction nanodevice reveals high light-dark current ratio of 104 at 0 V bias, indicating effective carriers’ separation. And more, by integrating plasmonic effect, the responsivity and detectivity of the Au nanoparticles decorated device are increased from 3.85 to 148.83 mA/W and 4.45×1011 to 2.33 × 1012 Jones under 325 nm UV light irradiation. While the rise and the fall time are decreased 1.3 times and 6.8 times under 520 nm visible light irradiation at 0 V bias. The high photocurrent gain is derived from that the oscillating high-energy hot electrons in Au nanoparticles spontaneously inject into the ZnTe conduction band to involve the photodetection process. This work presents an effective route to prepare high-performance self-power photodetector and provides a promising blueprint to realize different functional photoelectronic devices based on core/shell nanostructure.

Keywords: plasmonic effect, GaN/ZnTe core/shell, nanopillar array, ultraviolet/visible photodetector, self-power

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Publication history
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Acknowledgements

Publication history

Received: 29 October 2023
Revised: 29 December 2023
Accepted: 07 January 2024
Published: 02 March 2024
Issue date: June 2024

Copyright

© Tsinghua University Press 2024

Acknowledgements

Acknowledgements

This work was supported by the National Natural Science Foundation of China (Nos. 62075041, 62375049, and 62335003) and the Basic Research Program of Jiangsu Province (No. BK20222007).

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