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Research Article

Plasmon-enhanced self-powered GaN/ZnTe core/shell nanopillar array photodetector

Jianqi Dong1, Dongqi Zhang2, Yi Ma1, Daotong You3, Jinping Chen1, Bin Liu2, Xingfu Wang4, Zengliang Shi1( ), Chunxiang Xu1( )
State Key Laboratory of Digital Medical Engineering, School of Biological Science and Medical Engineering, Southeast University, Nanjing 210096, China
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
Institute of Photonics Technology, Jinan University, Guangzhou 510632, China
Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou 510631, China
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Graphical Abstract

The n-GaN/p-ZnTe core/shell nanopillar radial heterojunction is precisely constructed using soft UV curing nanoimprint and classical radio-frequency (RF) magnetron sputtering techniques. Furthermore, by integrating plasmonic effect, the Au nanoparticles (NPs) decorated hybrid device exhibits an encouraging ultraviolet/visible photoresponse, high responsivity and detectivity (148.83 mA/W and 2.33 × 1012 Jones), and drastically improve the rise (about 2 times) and fall time (about 7 times) of the pristine device at 0 V bias.

Abstract

Nanostructure photodetectors, as the core component of optoelectronic devices, are mainly focused on the precise preparation of mixed-component nano-heterostructures and the realization of zero power consumption devices. Herein, we successfully fabricated n-GaN/p-ZnTe core/shell nanopillar array and realized self-power ultraviolet/violet photodetection. The radial heterojunction nanodevice reveals high light-dark current ratio of 104 at 0 V bias, indicating effective carriers’ separation. And more, by integrating plasmonic effect, the responsivity and detectivity of the Au nanoparticles decorated device are increased from 3.85 to 148.83 mA/W and 4.45×1011 to 2.33 × 1012 Jones under 325 nm UV light irradiation. While the rise and the fall time are decreased 1.3 times and 6.8 times under 520 nm visible light irradiation at 0 V bias. The high photocurrent gain is derived from that the oscillating high-energy hot electrons in Au nanoparticles spontaneously inject into the ZnTe conduction band to involve the photodetection process. This work presents an effective route to prepare high-performance self-power photodetector and provides a promising blueprint to realize different functional photoelectronic devices based on core/shell nanostructure.

Keywords

GaN/ZnTe core/shellnanopillar arrayself-powerultraviolet/visible photodetectorplasmonic effect

Electronic Supplementary Material

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Nano Research
Volume 17 Issue 6,
June 2024
Pages 5569-5577
DOI: 10.1007/s12274-024-6477-9
Cite this article:
Dong J, Zhang D, Ma Y, et al. Plasmon-enhanced self-powered GaN/ZnTe core/shell nanopillar array photodetector. Nano Research, 2024, 17(6): 5569-5577. https://doi.org/10.1007/s12274-024-6477-9
Topics:
PhotodetectorsPlasma applicationsSemiconductor device manufacture Semiconductor devices Semiconductor junctions

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Received: 29 October 2023
Revised: 29 December 2023
Accepted: 07 January 2024
Published: 02 March 2024
© Tsinghua University Press 2024
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