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Nano Research 2024, 17(4): 3232-3244 https://doi.org/10.1007/s12274-023-6196-7
Research Article | Open Access | Issue | Published: 24 November 2023

Modulating p-type doping of two-dimensional material palladium diselenide

Show Author's Information Jiali Yang1,3,§,  Yu Liu4,5,§,  En-Yang Wang10,§,  Jinbo Pang1,3( ),  Shirong Huang15,16,17,18,  Thomas Gemming2,  Jinshun Bi6,7,8( ),  Alicja Bachmatiuk9,  Hao Jia3,  Shu-Xian Hu10( ),  Chongyun Jiang11,  Hong Liu1,14( ),  Gianaurelio Cuniberti15,16,17,18( ),  Weijia Zhou1,  Mark H Rümmeli2,4,5,12,13( )
Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan 250022, China
Institute for Materials Chemistry, Leibniz Institute for Solid State and Materials Research Dresden (IFW Dresden), 20 Helmholtz Strasse, Dresden 01069, Germany
State Key Lab of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
College of Energy, Soochow Institute for Energy and Materials Innovations Soochow University, Suzhou 215006, China
Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, China
School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing 101408, China
Institute of Microelectronics of Tianjin Binhai New Area, Tianjin 300451, China
Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Lukasiewicz Research Network, PORT Polish Center for Technology Development, Stablowicka 147, Wroclaw 54-066, Poland
School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China
College of electronic information and optical engineering, Nankai University, Tianjin 300350, China
Centre of Polymer and Carbon Materials, Polish Academy of Sciences, M. Curie Sklodowskiej 34, Zabrze 41-819, Poland
Center for Energy and Environmental Technologies, VŠB-Technical University of Ostrava, 17. Listopadu 15, Ostrava 708 33, Czech Republic
State Key Laboratory of Crystal Materials, Center of Bio & Micro/Nano Functional Materials, Shandong University, Jinan 250100, China
Dresden Center for Computational Materials Science, Technische Universität Dresden, Dresden 01062, Germany
Dresden Center for Intelligent Materials (GCL DCIM), Technische Universität Dresden, Dresden 01062, Germany
Institute for Materials Science and Max Bergmann Center of Biomaterials, Technische Universität Dresden, Dresden 01069, Germany
Center for Advancing Electronics Dresden, Technische Universität Dresden, Dresden 01069, Germany

§ Jiali Yang, Yu Liu, and En-Yang Wang contributed equally to this work.

Keywords:
two-dimensional (2D) materials, field-effect transistors, Lewis acid treatment, p-type doping, transfer characteristic
Topics:
Charge transferChemical vapor depositionDoping (additives)Field effect transistorsFilm growthLayered semiconductorsSemiconducting films Semiconductor devices Semiconductor doping
Cite this article:
Yang J, Liu Y, Wang E-Y, et al. Modulating p-type doping of two-dimensional material palladium diselenide. Nano Research, 2024, 17(4): 3232-3244. https://doi.org/10.1007/s12274-023-6196-7
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Abstract Full text Electronic supplementary material About this article

The van der Waals heterostructures have evolved as novel materials for complementing the Si-based semiconductor technologies. Group-10 noble metal dichalcogenides (e.g., PtS2, PtSe2, PdS2, and PdSe2) have been listed into two-dimensional (2D) materials toolkit to assemble van der Waals heterostructures. Among them, PdSe2 demonstrates advantages of high stability in air, high mobility, and wide tunable bandgap. However, the regulation of p-type doping of PdSe2 remains unsolved problem prior to fabricating p–n junction as a fundamental platform of semiconductor physics. Besides, a quantitative method for the controllable doping of PdSe2 is yet to be reported. In this study, the doping level of PdSe2 was correlated with the concentration of Lewis acids, for example, SnCl4, used for soaking. Considering the transfer characteristics, the threshold voltage (the gate voltage corresponding to the minimum drain current) increased after SnCl4 soaking treatment. PdSe2 transistors were soaked in SnCl4 solutions with five different concentrations. The threshold voltages from the as-obtained transfer curves were extracted for linear fitting to the threshold voltage versus doping concentration correlation equation. This study provides in-depth insights into the controllable p-type doping of PdSe2. It may also push forward the research of the regulation of conductivity behaviors of 2D materials.


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Abstract
Full text
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Electronic supplementary material
About this article

Modulating p-type doping of two-dimensional material palladium diselenide

Show Author's information Jiali Yang1,3,§, Yu Liu4,5,§, En-Yang Wang10,§, Jinbo Pang1,3( ), Shirong Huang15,16,17,18, Thomas Gemming2, Jinshun Bi6,7,8( ), Alicja Bachmatiuk9, Hao Jia3, Shu-Xian Hu10( ), Chongyun Jiang11, Hong Liu1,14( ), Gianaurelio Cuniberti15,16,17,18( ), Weijia Zhou1, Mark H Rümmeli2,4,5,12,13( )
Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan 250022, China
Institute for Materials Chemistry, Leibniz Institute for Solid State and Materials Research Dresden (IFW Dresden), 20 Helmholtz Strasse, Dresden 01069, Germany
State Key Lab of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
College of Energy, Soochow Institute for Energy and Materials Innovations Soochow University, Suzhou 215006, China
Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, China
School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing 101408, China
Institute of Microelectronics of Tianjin Binhai New Area, Tianjin 300451, China
Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Lukasiewicz Research Network, PORT Polish Center for Technology Development, Stablowicka 147, Wroclaw 54-066, Poland
School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China
College of electronic information and optical engineering, Nankai University, Tianjin 300350, China
Centre of Polymer and Carbon Materials, Polish Academy of Sciences, M. Curie Sklodowskiej 34, Zabrze 41-819, Poland
Center for Energy and Environmental Technologies, VŠB-Technical University of Ostrava, 17. Listopadu 15, Ostrava 708 33, Czech Republic
State Key Laboratory of Crystal Materials, Center of Bio & Micro/Nano Functional Materials, Shandong University, Jinan 250100, China
Dresden Center for Computational Materials Science, Technische Universität Dresden, Dresden 01062, Germany
Dresden Center for Intelligent Materials (GCL DCIM), Technische Universität Dresden, Dresden 01062, Germany
Institute for Materials Science and Max Bergmann Center of Biomaterials, Technische Universität Dresden, Dresden 01069, Germany
Center for Advancing Electronics Dresden, Technische Universität Dresden, Dresden 01069, Germany

§ Jiali Yang, Yu Liu, and En-Yang Wang contributed equally to this work.

Abstract

The van der Waals heterostructures have evolved as novel materials for complementing the Si-based semiconductor technologies. Group-10 noble metal dichalcogenides (e.g., PtS2, PtSe2, PdS2, and PdSe2) have been listed into two-dimensional (2D) materials toolkit to assemble van der Waals heterostructures. Among them, PdSe2 demonstrates advantages of high stability in air, high mobility, and wide tunable bandgap. However, the regulation of p-type doping of PdSe2 remains unsolved problem prior to fabricating p–n junction as a fundamental platform of semiconductor physics. Besides, a quantitative method for the controllable doping of PdSe2 is yet to be reported. In this study, the doping level of PdSe2 was correlated with the concentration of Lewis acids, for example, SnCl4, used for soaking. Considering the transfer characteristics, the threshold voltage (the gate voltage corresponding to the minimum drain current) increased after SnCl4 soaking treatment. PdSe2 transistors were soaked in SnCl4 solutions with five different concentrations. The threshold voltages from the as-obtained transfer curves were extracted for linear fitting to the threshold voltage versus doping concentration correlation equation. This study provides in-depth insights into the controllable p-type doping of PdSe2. It may also push forward the research of the regulation of conductivity behaviors of 2D materials.

Keywords: two-dimensional (2D) materials, field-effect transistors, Lewis acid treatment, p-type doping, transfer characteristic

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Received: 07 August 2023
Revised: 11 September 2023
Accepted: 12 September 2023
Published: 24 November 2023
Issue date: April 2024

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Acknowledgements

Acknowledgements

J. B. P. thanks the Natural Science Foundation of Shandong Province for Excellent Young Scholars (No. ZR2022YQ41) and the fund (No. SKT2203) from the State Key Laboratories of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences for support. This work was partially supported by the National Key Research and Development Program of China (No. 2022YFE0124200) and the National Natural Science Foundation of China (No. U2241221). W. J. Z. thanks the Major innovation project of Shandong Province (No. 2021CXGC010603), the National Natural Science Foundation of China (No. 52022037), and the Taishan Scholars Project Special Funds (No. TSQN201812083). The project was supported by the Foundation (No. GZKF202107) of State Key Laboratory of Biobased Material and Green Papermaking, Qilu University of Technology, Shandong Academy of Sciences. M. H. R. thanks the National Natural Science Foundation of China (No. 52071225), the National Science Center and the Czech Republic under the ERDF program “Institute of Environmental Technology—Excellent Research” (No. CZ.02.1.01/0.0/0.0/16_019/0000853), and the Sino-German Research Institute (No. GZ 1400) for support. S. X. H. thanks the National Natural Science Foundation of China (Nos. 21976014 and 22276013) for funding, and thanks the Tianhe2-JK HPC for generous computer time.

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