Journal Home > Volume 17 , Issue 3
Nano Research 2024, 17(3): 1886-1892 https://doi.org/10.1007/s12274-023-5964-8
Research Article | Issue | Published: 01 August 2023

Realization of flexible in-memory computing in a van der Waals ferroelectric heterostructure tri-gate transistor

Show Author's Information Xinzhu Gao1,2,  Quan Chen1,2,  Qinggang Qin3,  Liang Li3,  Meizhuang Liu1,2,  Derek Hao4,  Junjie Li5,6( ),  Jingbo Li7,  Zhongchang Wang8,  Zuxin Chen1,2( )
School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, China
Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou 510631, China
Institute of Solid State Physics Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230601, China
School of Science, STEM College, RMIT University, Melbourne 3000, Australia
CAS Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, China
International Iberian Nanotechnology Laboratory (INL), Av. Mestre Jose Veiga s/n, Braga 4715-330, Portugal
Keywords:
tri-gate, heterostructure, in-memory computing, polymorphic regulation, two-dimensional (2D) ferroelectric
Topics:
Nano deviceSemiconductors
Cite this article:
Gao X, Chen Q, Qin Q, et al. Realization of flexible in-memory computing in a van der Waals ferroelectric heterostructure tri-gate transistor. Nano Research, 2024, 17(3): 1886-1892. https://doi.org/10.1007/s12274-023-5964-8
Download citation
EndNote(RIS)
BibTeX

768

Views

98

Downloads

Citations

9

Crossref

9

WoS

7

Scopus

0

CSCD

Abstract Full text Electronic supplementary material About this article

Combining logical function and memory characteristics of transistors is an ideal strategy for enhancing computational efficiency of transistor devices. Here, we rationally design a tri-gate two-dimensional (2D) ferroelectric van der Waals heterostructures device based on copper indium thiophosphate (CuInP2S6) and few layers tungsten disulfide (WS2), and demonstrate its multi-functional applications in multi-valued state of data, non-volatile storage, and logic operation. By co-regulating the input signals across the tri-gate, we show that the device can switch functions flexibly at a low supply voltage of 6 V, giving rise to an ultra-high current switching ratio of 107 and a low subthreshold swing of 53.9 mV/dec. These findings offer perspectives in designing smart 2D devices with excellent functions based on ferroelectric van der Waals heterostructures.


menu
Abstract
Full text
Outline
Electronic supplementary material
About this article

Realization of flexible in-memory computing in a van der Waals ferroelectric heterostructure tri-gate transistor

Show Author's information Xinzhu Gao1,2, Quan Chen1,2, Qinggang Qin3, Liang Li3, Meizhuang Liu1,2, Derek Hao4, Junjie Li5,6( ), Jingbo Li7, Zhongchang Wang8, Zuxin Chen1,2( )
School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, China
Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou 510631, China
Institute of Solid State Physics Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230601, China
School of Science, STEM College, RMIT University, Melbourne 3000, Australia
CAS Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, China
International Iberian Nanotechnology Laboratory (INL), Av. Mestre Jose Veiga s/n, Braga 4715-330, Portugal

Abstract

Combining logical function and memory characteristics of transistors is an ideal strategy for enhancing computational efficiency of transistor devices. Here, we rationally design a tri-gate two-dimensional (2D) ferroelectric van der Waals heterostructures device based on copper indium thiophosphate (CuInP2S6) and few layers tungsten disulfide (WS2), and demonstrate its multi-functional applications in multi-valued state of data, non-volatile storage, and logic operation. By co-regulating the input signals across the tri-gate, we show that the device can switch functions flexibly at a low supply voltage of 6 V, giving rise to an ultra-high current switching ratio of 107 and a low subthreshold swing of 53.9 mV/dec. These findings offer perspectives in designing smart 2D devices with excellent functions based on ferroelectric van der Waals heterostructures.

Keywords: tri-gate, heterostructure, in-memory computing, polymorphic regulation, two-dimensional (2D) ferroelectric

References(48)

[1]

Chen, C. F.; Yang, S. H.; Lin, C. Y.; Lee, M. P.; Tsai, M. Y.; Yang, F. S.; Chang, Y. M.; Li, M. J.; Lee, K. C.; Ueno, K. et al. Reversible charge-polarity control for multioperation-mode transistors based on van der Waals heterostructures. Adv. Sci. 2022, 9, 2106016.
DOI Google Scholar
[2]

Jin, T. Y.; Mao, J. Y.; Gao, J.; Han, C.; Loh, K. P.; Wee, A. T. S.; Chen, W. Ferroelectrics-integrated two-dimensional devices toward next-generation electronics. ACS Nano 2022, 16, 13595–13611.
DOI Google Scholar
[3]

Wu, E. X.; Xie, Y.; Wang, S. J.; Zhang, D. H.; Hu, X. D.; Liu, J. Non-volatile programmable homogeneous lateral MoTe2 junction for multi-bit flash memory and high-performance optoelectronics. Nano Res. 2020, 13, 3445–3451.
DOI Google Scholar
[4]

Sebastian, A.; Pendurthi, R.; Choudhury, T. H.; Redwing, J. M.; Das, S. Benchmarking monolayer MoS2 and WS2 field-effect transistors. Nat. Commun. 2021, 12, 693.
DOI Google Scholar
[5]

Li, H.; Li, X. M.; Park, J. H.; Tao, L.; Kim, K. K.; Lee, Y. H.; Xu, J. B. Restoring the photovoltaic effect in graphene-based van der Waals heterojunctions towards self-powered high-detectivity photodetectors. Nano Energy 2019, 57, 214–221.
DOI Google Scholar
[6]

Cheng, R. Q.; Wang, F.; Yin, L.; Wang, Z. X.; Wen, Y.; Shifa, T. A.; He, J. High-performance, multifunctional devices based on asymmetric van der Waals heterostructures. Nat. Electron. 2018, 1, 356–361.
DOI Google Scholar
[7]

Chen, Y. F.; Wang, Y.; Wang, Z.; Gu, Y.; Ye, Y.; Chai, X. L.; Ye, J. F.; Chen, Y.; Xie, R. Z.; Zhou, Y. et al. Unipolar barrier photodetectors based on van der Waals heterostructures. Nat. Electron. 2021, 4, 357–363.
DOI Google Scholar
[8]

Qi, L.; Ruan, S. C.; Zeng, Y. J. Review on recent developments in 2D ferroelectrics: Theories and applications. Adv. Mater. 2021, 33, 2005098.
DOI Google Scholar
[9]

Zhang, D. W.; Schoenherr, P.; Sharma, P.; Seidel, J. Ferroelectric order in van der Waals layered materials. Nat. Rev. Mater. 2023, 8, 25–40.
DOI Google Scholar
[10]

Li, W. Y.; Guo, Y. M.; Luo, Z. P.; Wu, S. H.; Han, B.; Hu, W. J.; You, L.; Watanabe, K.; Taniguchi, T.; Alava, T. et al. A gate programmable van der Waals metal-ferroelectric-semiconductor vertical heterojunction memory. Adv. Mater. 2023, 35, 2208266.
DOI Google Scholar
[11]

Huang, Y. T.; Chen, N. K.; Li, Z. Z.; Wang, X. P.; Sun, H. B.; Zhang, S. B.; Li, X. B. Two-dimensional In2Se3: A rising advanced material for ferroelectric data storage. InfoMat 2022, 4, e12341.
DOI Google Scholar
[12]

Mao, X. Y.; Fu, J.; Chen, C.; Li, Y.; Liu, H.; Gong, M.; Zeng, H. L. Nonvolatile electric control of exciton complexes in monolayer MoSe2 with two-dimensional ferroelectric CuInP2S6. ACS Appl. Mater. Interfaces 2021, 13, 24250–24257.
DOI Google Scholar
[13]

Guo, F.; Song, M. L.; Wong, M. C.; Ding, R.; Io, W. F.; Pang, S. Y.; Jie, W. J.; Hao, J. H. Multifunctional optoelectronic synapse based on ferroelectric van der Waals heterostructure for emulating the entire human visual system. Adv. Funct. Mater. 2022, 32, 2108014.
DOI Google Scholar
[14]

Xue, F.; He, X.; Wang, Z. Y.; Retamal, J. R. D.; Chai, Z.; Jing, L. L.; Zhang, C. H.; Fang, H.; Chai, Y.; Jiang, T. et al. Giant ferroelectric resistance switching controlled by a modulatory terminal for low-power neuromorphic in-memory computing. Adv. Mater. 2021, 33, 2008709.
DOI Google Scholar
[15]

Xiong, X.; Kang, J. Y.; Liu, S. Y.; Tong, A. Y.; Fu, T. Y.; Li, X. F.; Huang, R.; Wu, Y. Q. Nonvolatile logic and ternary content-addressable memory based on complementary black phosphorus and rhenium disulfide transistors. Adv. Mater. 2022, 34, 2106321.
DOI Google Scholar
[16]

Dai, M. J.; Li, K.; Wang, F. K.; Hu, Y. X.; Zhang, J.; Zhai, T. Y.; Yang, B.; Fu, Y. Q.; Cao, W. W.; Jia, D. C. et al. Intrinsic dipole coupling in 2D van der Waals ferroelectrics for gate-controlled switchable rectifier. Adv. Electron. Mater. 2020, 6, 1900975.
DOI Google Scholar
[17]

Wang, S.; Pan, X.; Lyu, L. Y.; Wang, C. Y.; Wang, P. F.; Pan, C.; Yang, Y. K.; Wang, C.; Shi, J. W.; Cheng, B. et al. Nonvolatile van der Waals heterostructure phototransistor for encrypted optoelectronic logic circuit. ACS Nano 2022, 16, 4528–4535.
DOI Google Scholar
[18]

Pan, C.; Wang, C. Y.; Liang, S. J.; Wang, Y.; Cao, T. J.; Wang, P. F.; Wang, C.; Wang, S.; Cheng, B.; Gao, A. Y. et al. Reconfigurable logic and neuromorphic circuits based on electrically tunable two-dimensional homojunctions. Nat. Electron. 2020, 3, 383–390.
DOI Google Scholar
[19]

Sun, X. X.; Zhu, C. G.; Yi, J. L.; Xiang, L.; Ma, C.; Liu, H. W.; Zheng, B. Y.; Liu, Y.; You, W. X.; Zhang, W. J. et al. Reconfigurable logic-in-memory architectures based on a two-dimensional van der Waals heterostructure device. Nat. Electron. 2022, 5, 752–760.
DOI Google Scholar
[20]

Luo, Z. D.; Zhang, S. Q.; Liu, Y.; Zhang, D. W.; Gan, X. T.; Seidel, J.; Liu, Y.; Han, G. Q.; Alexe, M.; Hao, Y. Dual-ferroelectric-coupling-engineered two-dimensional transistors for multifunctional in-memory computing. ACS Nano 2022, 16, 3362–3372.
DOI Google Scholar
[21]

Huang, W. H.; Wang, F.; Yin, L.; Cheng, R. Q.; Wang, Z. X.; Sendeku, M. G.; Wang, J. J.; Li, N. N.; Yao, Y. Y.; He, J. Gate-coupling-enabled robust hysteresis for nonvolatile memory and programmable rectifier in van der Waals ferroelectric heterojunctions. Adv. Mater. 2020, 32, 1908040.
DOI Google Scholar
[22]

Jin, J. Y.; Wang, Z. P.; Peng, Z. S.; Liu, H.; Peng, K.; Wei, H. N.; Wang, Y.; Xu, Y. S.; Wei, H.; Chu, W. G. et al. Multifunctional dual gated coupling device using van der Waals ferroelectric heterostructure. Adv. Electron. Mater. 2022, 8, 2200210.
DOI Google Scholar
[23]

Wang, X. W.; Zhu, C.; Deng, Y.; Duan, R. H.; Chen, J. Q.; Zeng, Q. S.; Zhou, J. D.; Fu, Q. D.; You, L.; Liu, S. et al. Van der Waals engineering of ferroelectric heterostructures for long-retention memory. Nat. Commun. 2021, 12, 1109.
DOI Google Scholar
[24]

Wang, Z. W.; Liu, X. C.; Zhou, X. F.; Yuan, Y. H.; Zhou, K. C.; Zhang, D.; Luo, H.; Sun, J. Reconfigurable quasi-nonvolatile memory/subthermionic FET functions in ferroelectric-2D semiconductor vdW architectures. Adv. Mater. 2022, 34, 2200032.
DOI Google Scholar
[25]

Luo, L.; Wang, L. N.; Chen, J. B.; Zhou, J. Z.; Yang, Z. H.; Pan, S. L.; Li, J. J. AIB3IIC3IIIQ8VI: A new family for the design of infrared nonlinear optical materials by coupling octahedra and tetrahedra Units. J. Am. Chem. Soc. 2022, 144, 21916–21925.
DOI Google Scholar
[26]

Zhou, J. Z.; Fan, Z. X.; Zhang, K. W.; Yang, Z. H.; Pan, S. L.; Li, J. J. Rb2CdSi4S10: Novel [Si4S10] T2-supertetrahedra-contained infrared nonlinear optical material with large band gap. Mater. Horiz. 2023, 10, 619–624.
DOI Google Scholar
[27]

Wang, P.; Chu, Y.; Tudi, A.; Xie, C. W.; Yang, Z. H.; Pan, S. L.; Li, J. J. The combination of structure prediction and experiment for the exploration of alkali-earth metal-contained chalcopyrite-like IR nonlinear optical material. Adv. Sci. 2022, 9, 2106120.
DOI Google Scholar
[28]

Bi, L.; Yao, Y. X.; Jiang, Q. M.; Huang, S.; Wang, X. H.; Jin, H.; Dai, X. Y.; Xu, Z. Y.; Fan, J.; Yin, H. B. et al. Instability of parasitic capacitance in T-shape-gate enhancement-mode AlGaN/GaN MIS-HEMTs. J. Semicond. 2022, 43, 032801.
DOI Google Scholar
[29]

Lv, L.; Zhuge, F. W.; Xie, F. J.; Xiong, X. J.; Zhang, Q. F.; Zhang, N.; Huang, Y.; Zhai, T. Y. Reconfigurable two-dimensional optoelectronic devices enabled by local ferroelectric polarization. Nat. Commun. 2019, 10, 3331.
DOI Google Scholar
[30]

Gao, W.; Zhang, S.; Zhang, F.; Wen, P. T.; Zhang, L.; Sun, Y. M.; Chen, H. Y.; Zheng, Z. Q.; Yang, M. M.; Luo, D. X. et al. 2D WS2 based asymmetric schottky photodetector with high performance. Adv. Electron Mater. 2021, 7, 2000964.
DOI
[31]

Chen, J. G.; Zhu, C.; Cao, G. M.; Liu, H. S.; Bian, R. J.; Wang, J. Y.; Li, C. C.; Chen, J. Q.; Fu, Q. D.; Liu, Q. et al. Mimicking neuroplasticity via ion migration in van der Waals layered copper indium thiophosphate. Adv. Mater. 2022, 34, 2104676.
DOI Google Scholar
[32]

Tang, W. H.; Zhang, X. K.; Yu, H. H.; Gao, L.; Zhang, Q. H.; Wei, X. F.; Hong, M. Y.; Gu, L.; Liao, Q. L.; Kang, Z. et al. A van der Waals ferroelectric tunnel junction for ultrahigh-temperature operation memory. Small Methods 2022, 6, 2101583.
DOI Google Scholar
[33]

Li, J. J.; Deepak, F. L. In situ kinetic observations on crystal nucleation and growth. Chem. Rev. 2022, 122, 16911–16982.
DOI Google Scholar
[34]

Chen, Z. X.; Chen, Q.; Chai, Z. B.; Wei, B.; Wang, J.; Liu, Y. P.; Shi, Y. M.; Wang, Z. C.; Li, J. B. Ultrafast growth of high-quality large-sized GaSe crystals by liquid metal promoter. Nano Res. 2022, 15, 4677–4681.
DOI Google Scholar
[35]

Liu, L.; Wang, H.; Wu, Q. L.; Wu, K.; Tian, Y.; Yang, H. T.; Shen, C. M.; Bao, L. H.; Qin, Z. H.; Gao, H. J. Ferroelectric-gated ReS2 field-effect transistors for nonvolatile memory. Nano Res. 2022, 15, 5443–5449.
DOI Google Scholar
[36]

Jie, W. J.; Hui, Y. Y.; Chan, N. Y.; Zhang, Y.; Lau, S. P.; Hao, J. H. Ferroelectric polarization effects on the transport properties of Graphene/PMN-PT field effect transistors. J. Phys. Chem. C 2013, 117, 13747–13752.
DOI Google Scholar
[37]

Zhao, Z. J.; Rakheja, S.; Zhu, W. J. Nonvolatile reconfigurable 2D schottky barrier transistors. Nano Lett. 2021, 21, 9318–9324.
DOI Google Scholar
[38]

Liu, L.; Hou, X.; Zhang, H.; Wang, J. L.; Zhou, P. Ferroelectric field-effect transistors for logic and in-situ memory applications. Nanotechnology 2020, 31, 424007.
DOI Google Scholar
[39]

Jiang, Y. R.; Zhang, L. L.; Wang, R.; Li, H. Z.; Li, L.; Zhang, S. C.; Li, X. P.; Su, J.; Song, X. H.; Xia, C. X. Asymmetric ferroelectric-gated two-dimensional transistor integrating self-rectifying photoelectric memory and artificial synapse. ACS Nano 2022, 16, 11218–11226.
DOI Google Scholar
[40]

Hayakawa, R.; Honma, K.; Nakaharai, S.; Kanai, K.; Wakayama, Y. Electrically reconfigurable organic logic gates: A promising perspective on a dual-gate antiambipolar transistor. Adv. Mater. 2022, 34, 2109491.
DOI Google Scholar
[41]

Singh, P.; Baek, S.; Yoo, H. H.; Niu, J. J.; Park, J. H.; Lee, S. Two-dimensional CIPS-InSe van der Waal heterostructure ferroelectric field effect transistor for nonvolatile memory applications. ACS Nano 2022, 16, 5418–5426.
DOI Google Scholar
[42]

Alam, M.; Crispin, X. The past, present, and future of piezoelectric fluoropolymers: Towards efficient and robust wearable nanogenerators. Nano Res. Energy 2023, 2, e9120076.
DOI Google Scholar
[43]

Chen, L.; Wang, L.; Peng, Y.; Feng, X. W.; Sarkar, S.; Li, S. F.; Li, B. C.; Liu, L.; Han, K. Z.; Gong, X. et al. A van der Waals synaptic transistor based on ferroelectric Hf0.5Zr0.5O2 and 2D tungsten disulfide. Adv. Electron. Mater. 2020, 6, 2000057.
DOI Google Scholar
[44]

Guo, X. H.; He, J. W.; Zheng, Y.; Wu, J. P.; Pan, C. F.; Zi, Y. L.; Cui, H. Z.; Li, X. Y. High-performance triboelectric nanogenerator based on theoretical analysis and ferroelectric nanocomposites and its high-voltage applications. Nano Res. Energy, 2023, 2, e9120074.
DOI Google Scholar
[45]

Chen, Z. X.; Chu, S.; Chen, J. P.; Chen, H.; Zhang, J. T.; Ma, X. Z.; Li, Q. G.; Chen, X. C. Epitaxially grown semi-vertical and aligned GaTe two dimensional sheets on ZnO substrate for energy harvesting applications. Nano Energy 2019, 56, 294–299.
DOI Google Scholar
[46]

Si, M. W.; Liao, P. Y.; Qiu, G.; Duan, Y. Q.; Ye, P. D. Ferroelectric field-effect transistors based on MoS2 and CuInP2S6 two-dimensional van der Waals heterostructure. ACS Nano 2018, 12, 6700–6705.
DOI Google Scholar
[47]

Yang, K.; Wang, S. L.; Han, T.; Liu, H. X. Low-power OR logic ferroelectric in-situ transistor based on a CuInP2S6/MoS2 van der Waals heterojunction. Nanomaterials 2021, 11, 1971.
DOI Google Scholar
[48]

Cao, Q.; Lü, W. M.; Wang, X. R.; Guan, X. W.; Wang, L.; Yan, S. S.; Wu, T.; Wang, X. L. Nonvolatile multistates memories for high-density data storage. ACS Appl. Mater. Interfaces 2020, 12, 42449–42471.
DOI Google Scholar
File
12274_2023_5964_MOESM1_ESM.pdf (2.8 MB)
Publication history
Copyright
Acknowledgements

Publication history

Received: 16 May 2023
Revised: 16 June 2023
Accepted: 27 June 2023
Published: 01 August 2023
Issue date: March 2024

Copyright

© Tsinghua University Press 2023

Acknowledgements

Acknowledgements

This work was supported by the National Natural Science Foundation of China (No. 62104073), the China Postdoctoral Science Foundation (No. 2021M691088), and the Pearl River Talent Recruitment Program (No. 2019ZT08X639). Z. C. W. acknowledges the European Research Executive Agency (Project 101079184-FUNLAYERS).

Return