Parametric study on controllable growth of SrZrS3 thin films with good conductivity for photodetectors
),
Zhifeng Shi(
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SrZrS3 is a promising chalcogenide perovskite with unique advantages including high abundance of consisting elements, high chemical stability, strong light absorption above its direct band gap, and excellent carrier transport ability. While unfortunately, due to the lack of breakthroughs in its thin film synthesis technique, its optoelectronic properties are not fully investigated, not to mention the device applications. In this work, large-area and uniform SrZrS3 thin film (5 cm × 5 cm) was prepared by facile sputtering method, followed by a post-annealing treatment at a high temperature of 1000 °C for 2–12 h under CS2 atmosphere. All SrZrS3 samples prepared adopt distorted orthorhombic structure with pnma space group and have high crystallinity. In addition, the band gap of SrZrS3 thin film is measured to be 2.29 eV, higher than that of the powder form (2.06 eV). Importantly, the light absorption coefficient of SrZrS3 thin film reaches over 105 cm−1, and the carrier mobility is as high as 106 cm2/(V∙s). The above advantages allow us to use the SrZrS3 thin film as photoactive layer for photodetector applications. Finally, a symmetrically structured photoconductive detector was fabricated, performing a high responsivity of 8 A/W (405 nm light excitation). These inspiring results promise the glorious application potential of SrZrS3 thin film in photodetectors, solar cells, and other optoelectronic devices.
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Parametric study on controllable growth of SrZrS3 thin films with good conductivity for photodetectors
), Zhifeng Shi(
)
Abstract
SrZrS3 is a promising chalcogenide perovskite with unique advantages including high abundance of consisting elements, high chemical stability, strong light absorption above its direct band gap, and excellent carrier transport ability. While unfortunately, due to the lack of breakthroughs in its thin film synthesis technique, its optoelectronic properties are not fully investigated, not to mention the device applications. In this work, large-area and uniform SrZrS3 thin film (5 cm × 5 cm) was prepared by facile sputtering method, followed by a post-annealing treatment at a high temperature of 1000 °C for 2–12 h under CS2 atmosphere. All SrZrS3 samples prepared adopt distorted orthorhombic structure with pnma space group and have high crystallinity. In addition, the band gap of SrZrS3 thin film is measured to be 2.29 eV, higher than that of the powder form (2.06 eV). Importantly, the light absorption coefficient of SrZrS3 thin film reaches over 105 cm−1, and the carrier mobility is as high as 106 cm2/(V∙s). The above advantages allow us to use the SrZrS3 thin film as photoactive layer for photodetector applications. Finally, a symmetrically structured photoconductive detector was fabricated, performing a high responsivity of 8 A/W (405 nm light excitation). These inspiring results promise the glorious application potential of SrZrS3 thin film in photodetectors, solar cells, and other optoelectronic devices.
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Acknowledgements
This work was supported by the National Natural Science Foundation of China (Nos. 62104215 and 12074347), China Postdoctoral Science Foundation (Nos. 2020M672257 and 2020TQ0286), Natural Science Foundation of Henan Province of China (No. 202300410439), and Department of Science and Technology of Henan Province of China (No. 202102210214).
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