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Nano Research 2023, 16(5): 7851-7857 https://doi.org/10.1007/s12274-022-5323-1
Research Article | Issue | Published: 29 December 2022

High-performance self-powered ultraviolet to near-infrared photodetector based on WS2/InSe van der Waals heterostructure

Show Author's Information Jinping Chen1,§,  Zhen Zhang2,§,  Yi Ma1,  Jiying Feng3,  Xiaoyu Xie1,  Xiaoxuan Wang1,  Aoqun Jian2,  Yuanzheng Li3,  Zhuxin Li1,  Heng Guo1,  Yizhi Zhu1,  Qiannan Cui1,  Zengliang Shi1( ),  Chunxiang Xu1( )
State Key Laboratory of Bioelectronics, School of Biological Science and Medical Engineering, Southeast University, Nanjing 210096, China
Micro Nano System Research Center, Key Laboratory of Advanced Transducers and Intelligent Control System of the Ministry of Education & College of Information Engineering and Computer, Taiyuan University of Technology, Taiyuan 030024, China
Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China

§ Jinping Chen and Zhen Zhang contributed equally to this work.

Keywords:
two-dimensional materials, van der Waals heterostructure, photocurrent, self-powered photodetector
Topics:
Semiconductor devices
Cite this article:
Chen J, Zhang Z, Ma Y, et al. High-performance self-powered ultraviolet to near-infrared photodetector based on WS2/InSe van der Waals heterostructure. Nano Research, 2023, 16(5): 7851-7857. https://doi.org/10.1007/s12274-022-5323-1
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Abstract Full text About this article

van der Waals heterostructures (vdWHs) based on two-dimensional (2D) materials without the crystal lattice matching constraint have great potential for high-performance optoelectronic devices. Herein, a WS2/InSe vdWH photodiode is proposed and fabricated by precisely stacking InSe and WS2 flakes through an all-dry transfer method. The WS2/InSe vdWH forms an n–n heterojunction with strong built-in electric field due to their intrinsic n-type semiconductor characteristics and energy-band alignments with a large Fermi level offset between WS2 and InSe. As a result, the device displays excellent photovoltaic behavior with a large open voltage of 0.47 V and a short-circuit current of 11.7 nA under 520 nm light illumination. Significantly, a fast rising/decay time of 63/76 μs, a large light on/off ratio of 105, a responsivity of 61 mA/W, a high detectivity of 2.5 × 1011 Jones, and a broadband photoresponse ranging from ultraviolet to near-infrared (325–980 nm) are achieved at zero bias. This study provides a strategy for developing high-performance self-powered broadband photodetectors based on 2D materials.


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About this article

High-performance self-powered ultraviolet to near-infrared photodetector based on WS2/InSe van der Waals heterostructure

Show Author's information Jinping Chen1,§, Zhen Zhang2,§, Yi Ma1, Jiying Feng3, Xiaoyu Xie1, Xiaoxuan Wang1, Aoqun Jian2, Yuanzheng Li3, Zhuxin Li1, Heng Guo1, Yizhi Zhu1, Qiannan Cui1, Zengliang Shi1( ), Chunxiang Xu1( )
State Key Laboratory of Bioelectronics, School of Biological Science and Medical Engineering, Southeast University, Nanjing 210096, China
Micro Nano System Research Center, Key Laboratory of Advanced Transducers and Intelligent Control System of the Ministry of Education & College of Information Engineering and Computer, Taiyuan University of Technology, Taiyuan 030024, China
Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China

§ Jinping Chen and Zhen Zhang contributed equally to this work.

Abstract

van der Waals heterostructures (vdWHs) based on two-dimensional (2D) materials without the crystal lattice matching constraint have great potential for high-performance optoelectronic devices. Herein, a WS2/InSe vdWH photodiode is proposed and fabricated by precisely stacking InSe and WS2 flakes through an all-dry transfer method. The WS2/InSe vdWH forms an n–n heterojunction with strong built-in electric field due to their intrinsic n-type semiconductor characteristics and energy-band alignments with a large Fermi level offset between WS2 and InSe. As a result, the device displays excellent photovoltaic behavior with a large open voltage of 0.47 V and a short-circuit current of 11.7 nA under 520 nm light illumination. Significantly, a fast rising/decay time of 63/76 μs, a large light on/off ratio of 105, a responsivity of 61 mA/W, a high detectivity of 2.5 × 1011 Jones, and a broadband photoresponse ranging from ultraviolet to near-infrared (325–980 nm) are achieved at zero bias. This study provides a strategy for developing high-performance self-powered broadband photodetectors based on 2D materials.

Keywords: two-dimensional materials, van der Waals heterostructure, photocurrent, self-powered photodetector

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Publication history
Copyright
Acknowledgements

Publication history

Received: 06 October 2022
Revised: 10 November 2022
Accepted: 12 November 2022
Published: 29 December 2022
Issue date: May 2023

Copyright

© Tsinghua University Press 2022

Acknowledgements

Acknowledgements

This work was supported by the National Natural Science Foundation of China (Nos. 11734005, 61821002, 62075041, 12004069, and 62204157), the National Key Research and Development Program of China (Nos. 2018YFA0209101 and 2017YFA0700500), and the Fundamental Research Funds for the Central Universities (No. 2242021k10009).

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