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Review Article

Defect engineering of two-dimensional materials towards next-generation electronics and optoelectronics

Jie Jiang1Peng Yang1Juin J. Liou1Wugang Liao1( )Yang Chai2( )
College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, China
Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
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Abstract

The ultrathin body of two-dimensional (2D) materials provides potential for next-generation electronics and optoelectronics. The unavoidable atomic defects substantially determine the physical properties of atomic-level thin 2D materials, thus enabling new functionalities that are impossible in three-dimensional semiconductors. Therefore, rational design of atomic defects provides an alternative approach to modulate the physical properties of 2D materials. In this review, we summarize the recent progress of defect engineering in 2D materials, particularly in device performance enhancement. Firstly, the common defects in 2D materials and approaches for generating and repairing defects, including synthesis and post-growth treatments, are systematically introduced. The correlations between defects and optical, electronic, and magnetic properties of 2D materials are then highlighted. Subsequently, defect engineering for high performance electronics and optoelectronics is emphasized. At last, we provide our perspective on challenges and opportunities in defect engineering of 2D materials.

Graphical Abstract

Defect engineering is an effective approach for property modulation. Recent progress of defect engineering in two-dimensional (2D) materials, particularly in device performance enhancement, is reviewed. We aim to give a comprehensive understanding of the influence of defects towards realistic application of 2D materials for future electronics and optoelectronics.

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Nano Research
Pages 3104-3124

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Cite this article:
Jiang J, Yang P, Liou JJ, et al. Defect engineering of two-dimensional materials towards next-generation electronics and optoelectronics. Nano Research, 2023, 16(2): 3104-3124. https://doi.org/10.1007/s12274-022-5016-9
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Received: 20 June 2022
Revised: 13 August 2022
Accepted: 04 September 2022
Published: 18 November 2022
© Tsinghua University Press 2022