A review of Mott insulator in memristors: The materials, characteristics, applications for future computing systems and neuromorphic computing

Mott insulator material, as a kind of strongly correlated electronic system with the characteristic of a drastic change in electrical conductivity, shows excellent application prospects in neuromorphological calculations and has attracted significant attention in the scientific community. Especially, computing systems based on Mott insulators can overcome the bottleneck of separated data storage and calculation in traditional artificial intelligence systems based on the von Neumann architecture, with the potential to save energy, increase operation speed, improve integration, scalability, and three-dimensionally stacked, and more suitable to neuromorphic computing than a complementary metal-oxide-semiconductor. In this review, we have reviewed Mott insulator materials, methods for driving Mott insulator transformation (pressure-, voltage-, and temperature-driven approaches), and recent relevant applications in neuromorphic calculations. The results in this review provide a path for further study of the applications in neuromorphic calculations based on Mott insulator materials and the related devices.