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Nano Research 2022, 15(10): 9377-9385 https://doi.org/10.1007/s12274-022-4611-0
Research Article | Issue | Published: 23 July 2022

Highly anisotropic thermal conductivity of few-layer CrOCl for efficient heat dissipation in graphene device

Show Author's Information Xiaoming Zheng1,5,§,  Yuehua Wei2,§,  Zhenhua Wei3,  Wei Luo3,  Xiao Guo4,  Xiangzhe Zhang3,  Jinxin Liu1,  Yangbo Chen1,  Gang Peng3,  Weiwei Cai1,5,  Shiqiao Qin2,  Han Huang4( ),  Chuyun Deng3( ),  Xueao Zhang1,5( )
College of Physical Science and Technology, Xiamen University, Xiamen 361005, China
College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
College of Arts and Sciences, National University of Defense Technology, Changsha 410073, China
Hunan Key Laboratory of Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, China
Jiujiang Research Institute of Xiamen University, Jiujiang 332105, China

§ Xiaoming Zheng and Yuehua Wei contributed equally to this work.

Keywords:
graphene devices, CrOCl, High thermal conductivity, strong anisotropy, efficient heat dissipation, heat sink
Topics:
Dielectric devicesField effect transistorsGraphene devices Semiconductor devices
Cite this article:
Zheng X, Wei Y, Wei Z, et al. Highly anisotropic thermal conductivity of few-layer CrOCl for efficient heat dissipation in graphene device. Nano Research, 2022, 15(10): 9377-9385. https://doi.org/10.1007/s12274-022-4611-0
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Abstract Full text Electronic supplementary material About this article

With the packing density growing continuously in integrated electronic devices, sufficient heat dissipation becomes a serious challenge. Recently, dielectric materials with high thermal conductivity have brought insight into effective dissipation of waste heat in electronic devices to prevent them from overheating and guarantee the performance stability. Layered CrOCl, an anti-ferromagnetic insulator with low-symmetry crystal structure and atomic level flatness, might be a promising solution to the thermal challenge. Herein, we have systematically studied the thermal transport of suspended few-layer CrOCl flakes by micro-Raman thermometry. The CrOCl flakes exhibit high thermal conductivities along zigzag direction, from ~ 392 ± 33 to ~ 1,017 ± 46 W·m−1·K−1 with flake thickness from 2 to 50 nm. Besides, pronounced thickness-dependent thermal conductivity ratio ( κZZ/ κAR from ~ 2.8 ± 0.24 to ~ 4.3 ± 0.25) has been observed in the CrOCl flakes, attributed to the discrepancy of phonon dispersion and phonon surface scattering. As a demonstration to the heat sink application of layered CrOCl, we then investigate the energy dissipation in graphene devices on CrOCl, SiO2 and hexagonal boron nitride (h-BN) substrates, respectively. The graphene device temperature rise on CrOCl is only 15.4% of that on SiO2 and 30% on h-BN upon the same electric power density, indicating the efficient heat dissipation of graphene device on CrOCl. Our study provides new insights into two-dimentional (2D) dielectric material with high thermal conductivity and strong anisotropy for the application of thermal management in electronic devices.


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Electronic supplementary material
About this article

Highly anisotropic thermal conductivity of few-layer CrOCl for efficient heat dissipation in graphene device

Show Author's information Xiaoming Zheng1,5,§, Yuehua Wei2,§, Zhenhua Wei3, Wei Luo3, Xiao Guo4, Xiangzhe Zhang3, Jinxin Liu1, Yangbo Chen1, Gang Peng3, Weiwei Cai1,5, Shiqiao Qin2, Han Huang4( ), Chuyun Deng3( ), Xueao Zhang1,5( )
College of Physical Science and Technology, Xiamen University, Xiamen 361005, China
College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
College of Arts and Sciences, National University of Defense Technology, Changsha 410073, China
Hunan Key Laboratory of Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, China
Jiujiang Research Institute of Xiamen University, Jiujiang 332105, China

§ Xiaoming Zheng and Yuehua Wei contributed equally to this work.

Abstract

With the packing density growing continuously in integrated electronic devices, sufficient heat dissipation becomes a serious challenge. Recently, dielectric materials with high thermal conductivity have brought insight into effective dissipation of waste heat in electronic devices to prevent them from overheating and guarantee the performance stability. Layered CrOCl, an anti-ferromagnetic insulator with low-symmetry crystal structure and atomic level flatness, might be a promising solution to the thermal challenge. Herein, we have systematically studied the thermal transport of suspended few-layer CrOCl flakes by micro-Raman thermometry. The CrOCl flakes exhibit high thermal conductivities along zigzag direction, from ~ 392 ± 33 to ~ 1,017 ± 46 W·m−1·K−1 with flake thickness from 2 to 50 nm. Besides, pronounced thickness-dependent thermal conductivity ratio ( κZZ/ κAR from ~ 2.8 ± 0.24 to ~ 4.3 ± 0.25) has been observed in the CrOCl flakes, attributed to the discrepancy of phonon dispersion and phonon surface scattering. As a demonstration to the heat sink application of layered CrOCl, we then investigate the energy dissipation in graphene devices on CrOCl, SiO2 and hexagonal boron nitride (h-BN) substrates, respectively. The graphene device temperature rise on CrOCl is only 15.4% of that on SiO2 and 30% on h-BN upon the same electric power density, indicating the efficient heat dissipation of graphene device on CrOCl. Our study provides new insights into two-dimentional (2D) dielectric material with high thermal conductivity and strong anisotropy for the application of thermal management in electronic devices.

Keywords: graphene devices, CrOCl, High thermal conductivity, strong anisotropy, efficient heat dissipation, heat sink

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Publication history
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Acknowledgements

Publication history

Received: 08 February 2022
Revised: 18 May 2022
Accepted: 01 June 2022
Published: 23 July 2022
Issue date: October 2022

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© Tsinghua University Press 2022

Acknowledgements

Acknowledgements

This work was supported by the National Natural Science Foundation of China (No.11874423).

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