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Nano Research 2022, 15(6): 5418-5424 https://doi.org/10.1007/s12274-022-4122-z
Research Article | Issue | Published: 21 February 2022

Gate-tunable large-scale flexible monolayer MoS2 devices for photodetectors and optoelectronic synapses

Show Author's Information Na Li1,2,  Congli He3( ),  Qinqin Wang2,4,  Jianshi Tang5,6,  Qingtian Zhang5,  Cheng Shen2,4,  Jian Tang2,4,  Heyi Huang5,  Shuopei Wang1,2,  Jiawei Li2,4,  Biying Huang2,4,  Zheng Wei2,4,  Yutuo Guo2,4,  Jiahao Yuan2,4,  Wei Yang2,4,7,  Rong Yang1,2,7,  Dongxia Shi2,4,7,  Guangyu Zhang1,2,4,7( )
Songshan Lake Materials Laboratory, Dongguan 523808, China
Beijing National Laboratory for Condensed Matter Physics, Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Institute of Advanced Materials, Beijing Normal University, Beijing 100875, China
School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
School of Integrated Circuits, Beijing Innovation Center for Future Chips (ICFC), Tsinghua University, Beijing 100084, China
Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing 100190, China
Keywords:
MoS2, photodetector, flexible devices, gate-tunable, optoelectronic synapse
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Nano device
Cite this article:
Li N, He C, Wang Q, et al. Gate-tunable large-scale flexible monolayer MoS2 devices for photodetectors and optoelectronic synapses. Nano Research, 2022, 15(6): 5418-5424. https://doi.org/10.1007/s12274-022-4122-z
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Abstract Full text Electronic supplementary material About this article

Photodetectors and optoelectronic synapses are vital for construction of artificial visual perception system. However, the hardware implementations of optoelectronic-neuromorphic devices based on conventional architecture usually suffer from poor scalability, light response range, and limited functionalities. Here, large-scale flexible monolayer MoS2 devices integrating photodetectors and optoelectronic synapses over the entire visible spectrum in one device have been realized, which can be used in photodetection, optical communication, artificial visual perception system, and optical artificial neural network. By modulating gate voltages, we enable MoS2-based devices to be photodetectors and also optoelectronic synapses. Importantly, the MoS2-based optoelectronic synapses could implement many synaptic functions and neuromorphic characteristics, such as short-term memory (STM), long-term memory (LTM), paired-pulse facilitation (PPF), long-term potentiation (LTP)/long-term depression (LTD), and “learning-experience” behavior. Furthermore, an associative learning behavior (the classical conditioning Pavlov’s dog experiment) was emulated using paired stimulation of optical and voltage pulses. These results facilitate the development of MoS2-based multifunctional optoelectronic devices with a simple device structure, showing great potential for photodetection, optoelectronic neuromorphic computing, human visual systems mimicking, as well as wearable and implantable electronics.


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Electronic supplementary material
About this article

Gate-tunable large-scale flexible monolayer MoS2 devices for photodetectors and optoelectronic synapses

Show Author's information Na Li1,2, Congli He3( ), Qinqin Wang2,4, Jianshi Tang5,6, Qingtian Zhang5, Cheng Shen2,4, Jian Tang2,4, Heyi Huang5, Shuopei Wang1,2, Jiawei Li2,4, Biying Huang2,4, Zheng Wei2,4, Yutuo Guo2,4, Jiahao Yuan2,4, Wei Yang2,4,7, Rong Yang1,2,7, Dongxia Shi2,4,7, Guangyu Zhang1,2,4,7( )
Songshan Lake Materials Laboratory, Dongguan 523808, China
Beijing National Laboratory for Condensed Matter Physics, Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Institute of Advanced Materials, Beijing Normal University, Beijing 100875, China
School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
School of Integrated Circuits, Beijing Innovation Center for Future Chips (ICFC), Tsinghua University, Beijing 100084, China
Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing 100190, China

Abstract

Photodetectors and optoelectronic synapses are vital for construction of artificial visual perception system. However, the hardware implementations of optoelectronic-neuromorphic devices based on conventional architecture usually suffer from poor scalability, light response range, and limited functionalities. Here, large-scale flexible monolayer MoS2 devices integrating photodetectors and optoelectronic synapses over the entire visible spectrum in one device have been realized, which can be used in photodetection, optical communication, artificial visual perception system, and optical artificial neural network. By modulating gate voltages, we enable MoS2-based devices to be photodetectors and also optoelectronic synapses. Importantly, the MoS2-based optoelectronic synapses could implement many synaptic functions and neuromorphic characteristics, such as short-term memory (STM), long-term memory (LTM), paired-pulse facilitation (PPF), long-term potentiation (LTP)/long-term depression (LTD), and “learning-experience” behavior. Furthermore, an associative learning behavior (the classical conditioning Pavlov’s dog experiment) was emulated using paired stimulation of optical and voltage pulses. These results facilitate the development of MoS2-based multifunctional optoelectronic devices with a simple device structure, showing great potential for photodetection, optoelectronic neuromorphic computing, human visual systems mimicking, as well as wearable and implantable electronics.

Keywords: MoS2, photodetector, flexible devices, gate-tunable, optoelectronic synapse

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Acknowledgements

Publication history

Received: 11 October 2021
Revised: 10 December 2021
Accepted: 30 December 2021
Published: 21 February 2022
Issue date: June 2022

Copyright

© Tsinghua University Press 2022

Acknowledgements

Acknowledgements

The authors acknowledge the financial supports from the Key-Area Research and Development Program of Guangdong Province (No. 2020B0101340001), the National Natural Science Foundation of China (Nos. 61888102, 11834017, 51901025, and 12074412), the Strategic Priority Research Program of Chinese Academy of Sciences (CAS) (No. XDB30000000), and Post-doctoral Innovative Talent Support Program (No. BX2021351). We acknowledge Dr. Shuang Gao and Chen Ouyang for their helpful discussion in optic-electronic measurement.

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