Journal Home > Volume 15 , Issue 3
Nano Research 2022, 15(3): 2522-2530 https://doi.org/10.1007/s12274-021-3785-1
Research Article | Issue | Published: 02 September 2021

Device performance limit of monolayer SnSe2 MOSFET

Show Author's Information Hong Li1( ),  Jiakun Liang1,  Qida Wang1,  Fengbin Liu1,  Gang Zhou2,  Tao Qing2,  Shaohua Zhang2,  Jing Lu3,4,5( )
College of Mechanical and Material Engineering, North China University of Technology, Beijing 100144, China
Beijing Key Laboratory of Long-life Technology of Precise Rotation and Transmission Mechanisms, Beijing Institute of Control Engineering, Beijing 100094, China
State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, China
Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
Peking University Yangtze Delta Institute of Optoelectronics, Nantong 226000, China
Keywords:
anisotropic, monolayer (ML) SnSe2, metal-oxide-semiconductor field-effect transistor (MOSFET), device performance limit, ab initio transport simulation
Topics:
Field effect transistors
Cite this article:
Li H, Liang J, Wang Q, et al. Device performance limit of monolayer SnSe2 MOSFET. Nano Research, 2022, 15(3): 2522-2530. https://doi.org/10.1007/s12274-021-3785-1
Download citation
EndNote(RIS)
BibTeX

661

Views

57

Downloads

Citations

10

Crossref

11

WoS

10

Scopus

0

CSCD

Abstract Full text About this article

Two-dimensional (2D) semiconductors are attractive channels to shrink the scale of field-effect transistors (FETs), and among which the anisotropic one is more advantageous for a higher on-state current (Ion). Monolayer (ML) SnSe2, as an abundant, economic, nontoxic, and stable two-dimensional material, possesses an anisotropic electronic nature. Herein, we study the device performances of the ML SnSe2 metal-oxide-semiconductor FETs (MOSFETs) and deduce their performance limit to an ultrashort gate length (Lg) and ultralow supply voltage (Vdd) by using the ab initio quantum transport simulation. An ultrahigh Ion of 5,660 and 3,145 µA/µm is acquired for the n-type 10-nm-Lg ML SnSe2 MOSFET at Vdd = 0.7 V for high-performance (HP) and low-power (LP) applications, respectively. Specifically, until Lg scales down to 2 and 3 nm, the MOSFETs (at Vdd = 0.65 V) surpass Ion, intrinsic delay time ( τ), and power-delay product (PDP) of the International Roadmap for Device and Systems (IRDS, 2020 version) for HP and LP devices for the year 2028. Moreover, the 5-nm-Lg ML SnSe2 MOSFET (at Vdd = 0.4 V) fulfills the IRDS HP device and the 7-nm-Lg MOSFET (at Vdd = 0.55 V) fulfills the IRDS LP device for the year 2034.


menu
Abstract
Full text
Outline
About this article

Device performance limit of monolayer SnSe2 MOSFET

Show Author's information Hong Li1( ), Jiakun Liang1, Qida Wang1, Fengbin Liu1, Gang Zhou2, Tao Qing2, Shaohua Zhang2, Jing Lu3,4,5( )
College of Mechanical and Material Engineering, North China University of Technology, Beijing 100144, China
Beijing Key Laboratory of Long-life Technology of Precise Rotation and Transmission Mechanisms, Beijing Institute of Control Engineering, Beijing 100094, China
State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, China
Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
Peking University Yangtze Delta Institute of Optoelectronics, Nantong 226000, China

Abstract

Two-dimensional (2D) semiconductors are attractive channels to shrink the scale of field-effect transistors (FETs), and among which the anisotropic one is more advantageous for a higher on-state current (Ion). Monolayer (ML) SnSe2, as an abundant, economic, nontoxic, and stable two-dimensional material, possesses an anisotropic electronic nature. Herein, we study the device performances of the ML SnSe2 metal-oxide-semiconductor FETs (MOSFETs) and deduce their performance limit to an ultrashort gate length (Lg) and ultralow supply voltage (Vdd) by using the ab initio quantum transport simulation. An ultrahigh Ion of 5,660 and 3,145 µA/µm is acquired for the n-type 10-nm-Lg ML SnSe2 MOSFET at Vdd = 0.7 V for high-performance (HP) and low-power (LP) applications, respectively. Specifically, until Lg scales down to 2 and 3 nm, the MOSFETs (at Vdd = 0.65 V) surpass Ion, intrinsic delay time ( τ), and power-delay product (PDP) of the International Roadmap for Device and Systems (IRDS, 2020 version) for HP and LP devices for the year 2028. Moreover, the 5-nm-Lg ML SnSe2 MOSFET (at Vdd = 0.4 V) fulfills the IRDS HP device and the 7-nm-Lg MOSFET (at Vdd = 0.55 V) fulfills the IRDS LP device for the year 2034.

Keywords: anisotropic, monolayer (ML) SnSe2, metal-oxide-semiconductor field-effect transistor (MOSFET), device performance limit, ab initio transport simulation

References(51)

1

Li, M. Y.; Su, S. K.; Wong, H. S. P.; Li, L. J. How 2D semiconductors could extend Moore's law. Nature 2019, 567, 169–170.
DOI Google Scholar
2

Zeng, M. Q.; Xiao, Y.; Liu, J. X.; Yang, K. N.; Fu, L. Exploring two-dimensional materials toward the next-generation circuits: From monomer design to assembly control. Chem. Rev. 2018, 118, 6236–6296.
DOI Google Scholar
3

Akinwande, D.; Huyghebaert, C.; Wang, C. H.; Serna, M. I.; Goossens, S.; Li, L. J.; Wong, H. S. P.; Koppens, F. H. L. Graphene and two-dimensional materials for silicon technology. Nature 2019, 573, 507–518.
DOI Google Scholar
4

Fiori, G.; Bonaccorso, F.; Iannaccone, G.; Palacios, T.; Neumaier, D.; Seabaugh, A.; Banerjee, S. K.; Colombo, L. Electronics based on two-dimensional materials. Nat. Nanotechnol. 2014, 9, 768–779.
DOI Google Scholar
5

Chhowalla, M.; Jena, D.; Zhang, H. Two-dimensional semiconductors for transistors. Nat. Rev. Mater. 2016, 1, 16052.
DOI Google Scholar
6

Kong, L. G.; Chen, Y.; Liu, Y. Recent progresses of NMOS and CMOS logic functions based on two-dimensional semiconductors. Nano Res. 2021, 14, 1768–1783.
DOI Google Scholar
7

Desai, S. B.; Madhvapathy, S. R.; Sachid, A. B.; Llinas, J. P.; Wang, Q. X.; Ahn, G. H.; Pitner, G.; Kim, M. J.; Bokor, J.; Hu, C. M. et al. MoS2 transistors with 1-nanometer gate lengths. Science 2016, 354, 99–102.
DOI Google Scholar
8

Xie, L.; Liao, M. Z.; Wang, S. P.; Yu, H.; Du, L. J.; Tang, J.; Zhao, J.; Zhang, J.; Chen, P.; Lu, X. B. Graphene-contacted ultrashort channel monolayer MoS2 transistors. Adv. Mater. 2017, 29, 1702522.
DOI Google Scholar
9

Nourbakhsh, A.; Zubair, A.; Sajjad, R. N.; Tavakkoli, K. G. A.; Chen, W.; Fang, S.; Ling, X.; Kong, J.; Dresselhaus, M. S.; Kaxiras, E. et al. MoS2 field-effect transistor with sub-10 nm channel length. Nano Lett. 2016, 16, 7798–7806.
DOI Google Scholar
10

Xu, K.; Chen, D. X.; Yang, F. Y.; Wang, Z. X.; Yin, L.; Wang, F.; Cheng, R. Q.; Liu, K. H.; Xiong, J.; Liu, Q. et al. Sub-10 nm nanopattern architecture for 2D material field-effect transistors. Nano Lett. 2017, 17, 1065–1070.
DOI Google Scholar
11

Miao, J. S.; Zhang, S. M.; Cai, L.; Scherr, M.; Wang, C. Ultrashort channel length black phosphorus field-effect transistors. ACS Nano 2015, 9, 9236–9243.
DOI Google Scholar
12

Tao, L.; Cinquanta, E.; Chiappe, D.; Grazianetti, C.; Fanciulli, M.; Dubey, M.; Molle, A.; Akinwande, D. Silicene field-effect transistors operating at room temperature. Nat. Nanotechnol. 2015, 10, 227–231.
DOI Google Scholar
13

Wang, Y. X.; Qiu, G.; Wang, R. X.; Huang, S. Y.; Wang, Q. X.; Liu, Y. Y.; Du, Y. C.; Goddard III, W. A.; Kim, M. J.; Xu, X. F. et al. Field-effect transistors made from solution-grown two-dimensional tellurene. Nat. Electron. 2018, 1, 228–236.
DOI Google Scholar
14

Wu, J. X.; Yuan, H. T.; Meng, M. M.; Chen, C.; Sun, Y.; Chen, Z. Y.; Dang, W. H.; Tan, C. W.; Liu, Y. J.; Yin, J. B. et al. High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se. Nat. Nanotechnol. 2017, 12, 530–534.
DOI Google Scholar
15

Quhe, R.; Li, Q. H.; Zhang, Q. X.; Wang, Y. Y.; Zhang, H.; Li, J. Z.; Zhang, X. Y.; Chen, D. X.; Liu, K. H.; Ye, Y. et al. Simulations of quantum transport in sub-5-nm monolayer phosphorene transistors. Phys. Rev. Appl. 2018, 10, 024022.
DOI Google Scholar
16

Wang, Y. Y.; Huang, P.; Ye, M.; Quhe, R.; Pan, Y. Y.; Zhang, H.; Zhong, H. X.; Shi, J. J.; Lu, J. Many-body effect, carrier mobility, and device performance of hexagonal arsenene and antimonene. Chem. Mater. 2017, 29, 2191–2201.
DOI Google Scholar
17

Sun, X. T.; Song, Z. G.; Liu, S. Q.; Wang, Y. Y.; Li, Y. Y.; Wang, W. Z.; Lu, J. Sub-5 nm monolayer arsenene and antimonene transistors. ACS Appl. Mater. Interfaces 2018, 10, 22363–22371.
DOI Google Scholar
18

Wang, Y. Y.; Fei, R. X.; Quhe, R.; Li, J. Z.; Zhang, H.; Zhang, X. Y.; Shi, B. W.; Xiao, L.; Song, Z. G.; Yang, J. B. et al. Many-body effect and device performance limit of monolayer InSe. ACS Appl. Mater. Interfaces 2018, 10, 23344–23352.
DOI Google Scholar
19

Quhe, R.; Liu, J. C.; Wu, J. X.; Yang, J.; Wang, Y. Y.; Li, Q. H.; Li, T. R.; Guo, Y.; Yang, J. B.; Peng, H. L. et al. High-performance sub-10 nm monolayer Bi2O2Se transistors. Nanoscale 2019, 11, 532–540.
DOI Google Scholar
20

Yan, J. H.; Pang, H.; Xu, L.; Yang, J.; Quhe, R.; Zhang, X. Y.; Pan, Y. Y.; Shi, B. W.; Liu, S. Q.; Xu, L. Q. et al. Excellent device performance of sub-5-nm monolayer tellurene transistors. Adv. Electron. Mater. 2019, 5, 1900226.
DOI Google Scholar
21

Zhou, W. H.; Zhang, S. L.; Guo, S. Y.; Wang, Y. Y.; Lu, J.; Ming, X.; Li, Z.; Qu, H. Z.; Zeng, H. B. Designing sub-10-nm metal-oxide-semiconductor field-effect transistors via ballistic transport and disparate effective mass: The case of two-dimensional BiN. Phys. Rev. Appl. 2020, 13, 044066.
DOI Google Scholar
22

Lv, S. Y.; Liu, X. Y.; Li, X. H.; Luo, W. F.; Xu, W. X.; Shi, Z. J.; Ren, Y. J.; Zhang, C. X.; Zhang, K. Electrochemical peeling few-layer SnSe2 for high-performance ultrafast photonics. ACS Appl. Mater. Interfaces 2020, 12, 43049–43057.
DOI Google Scholar
23

Park, Y. W.; Jerng, S. K.; Jeon, J. H.; Roy, S. B.; Akbar, K.; Kim, J.; Sim, Y.; Seong, M. J.; Kim, J. H.; Lee, Z. et al. Molecular beam epitaxy of large-area SnSe2 with monolayer thickness fluctuation. 2D Mater. 2017, 4, 014006.
DOI Google Scholar
24

Zhou, X.; Gan, L.; Tian, W. M.; Zhang, Q.; Jin, S. Y.; Li, H. Q.; Bando, Y.; Golberg, D.; Zhai, T. Y. Ultrathin SnSe2 flakes grown by chemical vapor deposition for high-performance photodetectors. Adv. Mater. 2015, 27, 8035–8041.
DOI Google Scholar
25

Shafique, A.; Samad, A.; Shin, Y. H. Ultra low lattice thermal conductivity and high carrier mobility of monolayer SnS2 and SnSe2: A first principles study. Phys. Chem. Chem. Phys. 2017, 19, 20677–20683.
DOI Google Scholar
26

Li, H.; Xu, P. P.; Liang, J. K.; Liu, F. B.; Luo, J.; Lu, J. Ohmic contact in graphene/SnSe2 van der Waals heterostructures and its device performance from ab initio simulation. J. Mater. Sci. 2020, 55, 4321–4331.
DOI Google Scholar
27

Guo, C. L.; Tian, Z.; Xiao, Y. J.; Mi, Q. X.; Xue, J. M. Field-effect transistors of high-mobility few-layer SnSe2. Appl. Phys. Lett. 2016, 109, 203104.
DOI Google Scholar
28

Pei, T. F.; Bao, L. H.; Wang, G. C.; Ma, R. S.; Yang, H. F.; Li, J. J.; Gu, C. Z.; Pantelides, S.; Du, S. X.; Gao, H. J. Few-layer SnSe2 transistors with high on/off ratios. Appl. Phys. Lett. 2016, 108, 053506.
DOI Google Scholar
29

Liu, J. C.; Zhong, M. Z.; Liu, X.; Sun, G. Z.; Chen, P.; Zhang, Z. W.; Li, J.; Ma, H. F.; Zhao, B.; Wu, R. X. et al. Two-dimensional plumbum-doped tin diselenide monolayer transistor with high on/off ratio. Nanotechnology 2018, 29, 474002.
DOI Google Scholar
30

Xu, H.; Xing, J.; Huang, Y.; Ge, C.; Lu, J. H.; Han, X.; Du, J. Y.; Hao, H. Y.; Dong, J. J.; Liu, H. SnSe2 field-effect transistor with high on/off ratio and polarity-switchable photoconductivity. Nanoscale Res. Lett. 2019, 14, 17.
DOI Google Scholar
31

Su, Y.; Ebrish, M. A.; Olson, E. J.; Koester, S. J. SnSe2 field-effect transistors with high drive current. Appl. Phys. Lett. 2013, 103, 263104.
DOI Google Scholar
32
IRDS. International Roadmap for Devices and Systems (IRDSTM) [Online]. http://irds.ieee.org/editions (accessed June 3 2021).
33
QuantumATK-Atomistic Simulation Software [Online]. https://www.synopsys.com/silicon/quantumatk.html (accessed June 3 2021).
34

Smidstrup, S.; Markussen, T.; Vancraeyveld, P.; Wellendorff, J.; Schneider, J.; Gunst, T.; Verstichel, B.; Stradi, D.; Khomyakov, P. A.; Vej-Hansen, U. G. et al. QuantumATK: An integrated platform of electronic and atomic-scale modelling tools. J. Phys.: Condens. Matter 2020, 32, 015901.
DOI Google Scholar
35

Perdew, J. P.; Burke, K.; Ernzerhof, M. Generalized gradient approximation made simple. Phys. Rev. Lett. 1996, 78, 3865–3868.
DOI Google Scholar
36

Monkhorst, H. J.; Pack, J. D. Special points for Brillouin-zone integrations. Phys. Rev. B 1976, 13, 5188–5192.
DOI Google Scholar
37

Liang, Y. F.; Yang, L. Carrier plasmon induced nonlinear band gap renormalization in two-dimensional semiconductors. Phys. Rev. Lett. 2015, 114, 063001.
DOI Google Scholar
38

Gao, S. Y.; Yang, L. Renormalization of the quasiparticle band gap in doped two-dimensional materials from many-body calculations. Phys. Rev. B 2017, 96, 155410.
DOI Google Scholar
39

Kim, W. Y.; Kim, K. S. Carbon nanotube, graphene, nanowire, and molecule-based electron and spin transport phenomena using the nonequilibrium Green's function method at the level of first principles theory. J. Comput. Chem. 2008, 29, 1073–1083.
DOI Google Scholar
40
Datta, S. Electronic Transport in Mesoscopic Systems; Cambridge University Press: Cambridge, 1995.https://doi.org/10.1017/CBO9780511805776
DOI
41
Datta, S. Quantum Transport: Atom to Transistor; Cambridge University Press: Cambridge, 2005.https://doi.org/10.1017/CBO9781139164313
DOI
42

Huang, Y. C.; Ling, C. Y.; Liu, H.; Wang, S. F.; Geng, B. Y. Versatile electronic and magnetic properties of SnSe2 nanostructures induced by the strain. J. Phys. Chem. C 2014, 118, 9251–9260.
DOI Google Scholar
43

Li, G. P.; Ding, G. Q.; Gao, G. Y. Thermoelectric properties of SnSe2 monolayer. J. Phys.: Condens. Matter 2017, 29, 015001.
DOI Google Scholar
44

Pan, Y. Y.; Dai, J. R.; Xu, L.; Yang, J.; Zhang, X. J.; Yan, J. H.; Li, J. Z.; Shi, B. W.; Liu, S. Q.; Hu, H. et al. Sub-5-nm monolayer silicane transistor: A first-principles quantum transport simulation. Phys. Rev. Appl. 2020, 14, 024016.
DOI Google Scholar
45

Guo, Y.; Pan, F.; Zhao, G. Y.; Ren, Y. J.; Yao, B. B.; Li, H.; Lu, J. Sub-5 nm monolayer germanium selenide (GeSe) MOSFETs: Towards a high performance and stable device. Nanoscale 2020, 12, 15443–15452.
DOI Google Scholar
46

Yang, J.; Quhe, R.; Li, Q. H.; Liu, S. Q.; Xu, L. Q.; Pan, Y. Y.; Zhang, H.; Zhang, X. Y.; Li, J. Z.; Yan, J. H. et al. Sub 10 nm bilayer Bi2O2Se transistors. Adv. Electron. Mater. 2019, 5, 1800720.
DOI Google Scholar
47

Zhang, H.; Shi, B. W.; Xu, L.; Yan, J. F.; Zhao, W.; Zhang, Z. Y.; Zhang, Z. Y.; Lu, J. Sub-5 nm monolayer MoS2 transistors toward low-power devices. ACS Appl. Electron. Mater. 2021, 3, 1560–1571.
DOI Google Scholar
48

Ding, Y.; Liu, Y. S.; Yang, G. F.; Gu, Y.; Fan, Q. G.; Lu, N. Y.; Zhao, H. Q.; Yu, Y. Z.; Zhang, X. M.; Huo, X. X. et al. High-performance ballistic quantum transport of sub-10 nm monolayer GeS field-effect transistors. ACS Appl. Electron. Mater. 2021, 3, 1151–1161.
DOI Google Scholar
49

Wang, J.; Cai, Q.; Lei, J. M.; Yang, G. F.; Xue, J. J.; Chen, D. J.; Liu, B.; Lu, H.; Zhang, R.; Zheng, Y. D. Performance of monolayer blue phosphorene double-gate MOSFETs from the first principles. ACS Appl. Mater. Interfaces 2019, 11, 20956–20964.
DOI Google Scholar
50

Guo, S. Y.; Wang, Y. Y.; Hu, X. M.; Zhang, S. L.; Qu, H. Z.; Zhou, W. H.; Wu, Z. H.; Liu, X. H.; Zeng, H. B. Ultrascaled double-gate monolayer SnS2 MOSFETs for high-performance and low-power applications. Phys. Rev. Appl. 2020, 14, 044031.
DOI Google Scholar
51

Quhe, R.; Chen, J. X.; Lu, J. A sub-10 nm monolayer ReS2 transistor for low-power applications. J. Mater. Chem. C 2019, 7, 1604–1611.
DOI Google Scholar
Publication history
Copyright
Acknowledgements

Publication history

Received: 03 June 2021
Revised: 23 July 2021
Accepted: 01 August 2021
Published: 02 September 2021
Issue date: March 2022

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2021

Acknowledgements

Acknowledgment

This work was supported by the Beijing Natural Science Foundation of China (No. 4212046), the National Natural Science Foundation of China (Nos. 11704008 and 91964101), the Support Plan of Yuyou Youth, and the fund of high-level characteristic research direction from North China University of Technology.

Return