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Nano Research 2022, 15(2): 1524-1531 https://doi.org/10.1007/s12274-021-3697-0
Research Article | Issue | Published: 02 August 2021

Comprehensive analysis of two-dimensional charge transport mechanism in thin-film transistors based on random networks of single-wall carbon nanotubes using transient measurements

Show Author's Information Hyeonwoo Shin1,§,  Sang-Joon Park2,§,  Byeong-Cheol Kang2,  Tae-Jun Ha2( )
Department of Electrical Engineering and Computer Science, Inter-university Semiconductor Research CenterSeoul National UniversitySeoul08826Korea
Department of Electronic Materials EngineeringKwangwoon UniversitySeoul01897Korea

§ Hyeonwoo Shin and Sang-Joon Park contributed equally to this work.

Keywords:
single-wall carbon nanotube, random networks, two-dimensional (2D) charge transport, time-domain transient measurements, charge trapping/de-trapping, shallow-/deep-traps
Topics:
Thin film transistors
Cite this article:
Shin H, Park S-J, Kang B-C, et al. Comprehensive analysis of two-dimensional charge transport mechanism in thin-film transistors based on random networks of single-wall carbon nanotubes using transient measurements. Nano Research, 2022, 15(2): 1524-1531. https://doi.org/10.1007/s12274-021-3697-0
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Abstract Full text Electronic supplementary material About this article

Understanding charge transport mechanisms in thin-film transistors based on random networks of single-wall carbon nanotubes (SWCNT-TFTs) is essential for further advances to improve the potential for various nanoelectronic applications. Herein, a comprehensive investigation of the two-dimensional (2D) charge transport mechanism in SWCNT-TFTs is reported by analyzing the temperature-dependent electrical characteristics determined from the direct-current and non-quasi-static transient measurements at 80-300 K. To elucidate the time-domain charge transport characteristics of the random networks in the SWCNTs, an empirical equation was derived from a theoretical trapping model, and a carrier velocity distribution was determined from the differentiation of the transient response. Furthermore, charge trapping and de-trapping in shallow- and deep-traps in SWCNT-TFTs were analyzed by investigating charge transport based on their trapping/de-trapping rate. The comprehensive analysis of this study provides fundamental insights into the 2D charge transport mechanism in TFTs based on random networks of nanomaterial channels.


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Electronic supplementary material
About this article

Comprehensive analysis of two-dimensional charge transport mechanism in thin-film transistors based on random networks of single-wall carbon nanotubes using transient measurements

Show Author's information Hyeonwoo Shin1,§, Sang-Joon Park2,§, Byeong-Cheol Kang2, Tae-Jun Ha2( )
Department of Electrical Engineering and Computer Science, Inter-university Semiconductor Research CenterSeoul National UniversitySeoul08826Korea
Department of Electronic Materials EngineeringKwangwoon UniversitySeoul01897Korea

§ Hyeonwoo Shin and Sang-Joon Park contributed equally to this work.

Abstract

Understanding charge transport mechanisms in thin-film transistors based on random networks of single-wall carbon nanotubes (SWCNT-TFTs) is essential for further advances to improve the potential for various nanoelectronic applications. Herein, a comprehensive investigation of the two-dimensional (2D) charge transport mechanism in SWCNT-TFTs is reported by analyzing the temperature-dependent electrical characteristics determined from the direct-current and non-quasi-static transient measurements at 80-300 K. To elucidate the time-domain charge transport characteristics of the random networks in the SWCNTs, an empirical equation was derived from a theoretical trapping model, and a carrier velocity distribution was determined from the differentiation of the transient response. Furthermore, charge trapping and de-trapping in shallow- and deep-traps in SWCNT-TFTs were analyzed by investigating charge transport based on their trapping/de-trapping rate. The comprehensive analysis of this study provides fundamental insights into the 2D charge transport mechanism in TFTs based on random networks of nanomaterial channels.

Keywords: single-wall carbon nanotube, random networks, two-dimensional (2D) charge transport, time-domain transient measurements, charge trapping/de-trapping, shallow-/deep-traps

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Publication history
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Acknowledgements

Publication history

Received: 23 March 2021
Revised: 10 June 2021
Accepted: 17 June 2021
Published: 02 August 2021
Issue date: February 2022

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2021

Acknowledgements

Acknowledgements

This work was supported by the National Research Foundation of Korea grant funded by the Korea government (MSIT) (NRF-2021R1A2C2012855).

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