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There are many studies on the solution-processed thin-film transistor (TFT) using transition metal dichalcogenide (TMD) materials. However, it is hard to control the electrical property of chemically exfoliated TMD materials compared to the chemical vapor deposition TMD. An investigation into the electrical modulation behavior of exfoliated two-dimensional (2D) material is important to fabricate well-modulated electronic devices via solution processing. Here, we report the effects of reactivity of organic dopants on MoS2 and investigate how the chemical doping behavior influences the electrical properties of MoS2. The band state of dopants, which is related to the electron-withdrawing and donating behavior of chemical dopant, provides a proportional shift in the threshold voltages (V th) of their field-effect transistors (FETs). However, on/off current ratio (I on/I off) and mobility (µ ) are strongly influenced by the defect density depending on the reactivity of doping reaction, rather than the band state of organic dopants. Through the in-depth study on the doping reaction, we fabricate a FET and a TFT, having high mobility and a relatively high on/off ratio (104) using a solution process.

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Publication history

Received: 10 July 2020
Revised: 21 August 2020
Accepted: 23 August 2020
Published: 05 January 2021
Issue date: January 2021

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© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature

Acknowledgements

This work was supported by the Institute for Basic Science (No. IBS-R011-D1).

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Reprints and Permission requests may be sought directly from editorial office.
Email: nanores@tup.tsinghua.edu.cn

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