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Nano Research 2019, 12(10): 2515-2519 https://doi.org/10.1007/s12274-019-2478-5
Research Article | Issue | Published: 01 August 2019

MoS2 dual-gate transistors with electrostatically doped contacts

Show Author's Information Fuyou Liao1<,  Yaocheng Sheng1<,  Zhongxun Guo1,  Hongwei Tang1,  Yin Wang1,  Lingyi Zong1,  Xinyu Chen1,  Antoine Riaud1,  Jiahe Zhu3,  Yufeng Xie1,  Lin Chen1,  Hao Zhu1,  Qingqing Sun1,  Peng Zhou1,  Xiangwei Jiang4,  Jing Wan2( ),  Wenzhong Bao1( ),  David Wei Zhang1
State Key Laboratory of ASIC and System,School of Microelectronics, Fudan University,Shanghai,200433,China;
State Key Laboratory of ASIC and System,School of Information Science and Engineering, Fudan University,Shanghai,200433,China;
School of Electronic Science and Engineering,Nanjing University,Nanjing,210093,China;
Institute of Semiconductors,Chinese Academy of Sciences,Beijing,100083,China;

§ Fuyou Liao and Yaocheng Sheng contributed equally to this work.

Keywords:
MoS2, dual-gate, tri-gate, field effect transistor, extrinsic resistance, electrostatic doping
Topics:
Layered semiconductorsSulfur compoundsTransition metals
Cite this article:
Liao F, Sheng Y, Guo Z, et al. MoS2 dual-gate transistors with electrostatically doped contacts. Nano Research, 2019, 12(10): 2515-2519. https://doi.org/10.1007/s12274-019-2478-5
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Abstract Full text Electronic supplementary material About this article

Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have been intensively investigated because of their exclusive physical properties for advanced electronics and optoelectronics. In the present work, we study the MoS2 transistor based on a novel tri-gate device architecture, with dual-gate (Dual-G) in the channel and the buried side-gate (Side-G) for the source/drain regions. All gates can be independently controlled without interference. For a MoS2 sheet with a thickness of 3.6 nm, the Schottky barrier (SB) and non-overlapped channel region can be effectively tuned by electrostatically doping the source/drain regions with Side-G. Thus, the extrinsic resistance can be effectively lowered, and a boost of the ON-state current can be achieved. Meanwhile, the channel control remains efficient under the Dual-G mode, with an ON-OFF current ratio of 3 × 107 and subthreshold swing of 83 mV/decade. The corresponding band diagram is also discussed to illustrate the device operation mechanism. This novel device structure opens up a new way toward fabrication of high-performance devices based on 2D-TMDs.


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About this article

MoS2 dual-gate transistors with electrostatically doped contacts

Show Author's information Fuyou Liao1<, Yaocheng Sheng1<, Zhongxun Guo1, Hongwei Tang1, Yin Wang1, Lingyi Zong1, Xinyu Chen1, Antoine Riaud1, Jiahe Zhu3, Yufeng Xie1, Lin Chen1, Hao Zhu1, Qingqing Sun1, Peng Zhou1, Xiangwei Jiang4, Jing Wan2( ), Wenzhong Bao1( ), David Wei Zhang1
State Key Laboratory of ASIC and System,School of Microelectronics, Fudan University,Shanghai,200433,China;
State Key Laboratory of ASIC and System,School of Information Science and Engineering, Fudan University,Shanghai,200433,China;
School of Electronic Science and Engineering,Nanjing University,Nanjing,210093,China;
Institute of Semiconductors,Chinese Academy of Sciences,Beijing,100083,China;

§ Fuyou Liao and Yaocheng Sheng contributed equally to this work.

Abstract

Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have been intensively investigated because of their exclusive physical properties for advanced electronics and optoelectronics. In the present work, we study the MoS2 transistor based on a novel tri-gate device architecture, with dual-gate (Dual-G) in the channel and the buried side-gate (Side-G) for the source/drain regions. All gates can be independently controlled without interference. For a MoS2 sheet with a thickness of 3.6 nm, the Schottky barrier (SB) and non-overlapped channel region can be effectively tuned by electrostatically doping the source/drain regions with Side-G. Thus, the extrinsic resistance can be effectively lowered, and a boost of the ON-state current can be achieved. Meanwhile, the channel control remains efficient under the Dual-G mode, with an ON-OFF current ratio of 3 × 107 and subthreshold swing of 83 mV/decade. The corresponding band diagram is also discussed to illustrate the device operation mechanism. This novel device structure opens up a new way toward fabrication of high-performance devices based on 2D-TMDs.

Keywords: MoS2, dual-gate, tri-gate, field effect transistor, extrinsic resistance, electrostatic doping

References(58)

1

Koppens, F. H. L.; Mueller, T.; Avouris, P.; Ferrari, A. C.; Vitiello, M. S.; Polini, M. Photodetectors based on graphene, other two-dimensional materials and hybrid systems. Nat. Nanotechnol. 2014, 9, 780-793.
DOI Google Scholar
2

Bonaccorso, F.; Colombo, L.; Yu, G. H.; Stoller, M.; Tozzini, V.; Ferrari, A. C.; Ruoff, R. S.; Pellegrini, V. 2D materials. Graphene, related two-dimensional crystals, and hybrid systems for energy conversion and storage. Science 2015, 347, 1246501.
DOI Google Scholar
3

Radisavljevic, B.; Radenovic, A.; Brivio, J.; Giacometti, V.; Kis, A. Single-layer MoS2 transistors. Nat. Nanotechnol. 2011, 6, 147-150.
DOI Google Scholar
4

Mak, K. F.; Lee, C.; Hone, J.; Shan, J.; Heinz, T. F. Atomically thin MoS2: A new direct-gap semiconductor. Phys. Rev. Lett. 2010, 105, 136805.
DOI Google Scholar
5

Wang, Q. H.; Kalantar-Zadeh, K.; Kis, A.; Coleman, J. N.; Strano, M. S. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 2012, 7, 699-712.
DOI Google Scholar
6

Butler, S. Z.; Hollen, S. M.; Cao, L. Y.; Cui, Y.; Gupta, J. A.; Gutiérrez, H. R.; Heinz, T. F.; Hong, S. S.; Huang, J. X.; Ismach, A. F. et al. Progress, challenges, and opportunities in two-dimensional materials beyond graphene. ACS Nano 2013, 7, 2898-2926.
DOI Google Scholar
7

Xu, M. S.; Liang, T.; Shi, M. M.; Chen, H. Z. Graphene-like two-dimensional materials. Chem. Rev. 2013, 113, 3766-3798.
DOI Google Scholar
8

Wu, J. Y.; Chun, Y. T.; Li, S. P.; Zhang, T.; Wang, J. Z.; Shrestha, P. K.; Chu, D. P. Broadband MoS2 field-effect phototransistors: Ultrasensitive visible-light photoresponse and negative infrared photoresponse. Adv. Mater. 2018, 30, 1705880.
DOI Google Scholar
9

Wu, G. J.; Wang, X. D.; Chen, Y.; Wang, Z.; Shen, H.; Lin, T.; Hu, W. D.; Wang, J. L.; Zhang, S. T.; Meng, X. J. et al. Ultrahigh photoresponsivity MoS2 photodetector with tunable photocurrent generation mechanism. Nanotechnology 2018, 29, 485204.
DOI Google Scholar
10

Desai, S. B.; Madhvapathy, S. R.; Sachid, A. B.; Llinas, J. P.; Wang, Q. X.; Ahn, G. H.; Pitner, G.; Kim, M. J.; Bokor, J.; Hu, C. M. et al. MoS2 transistors with 1-nanometer gate lengths. Science 2016, 354, 99-102.
DOI Google Scholar
11

Lee, H. S.; Min, S. W.; Park, M. K.; Lee, Y. T.; Jeon, P. J.; Kim, J. H.; Ryu, S.; Im, S. MoS2 nanosheets for top-gate nonvolatile memory transistor channel. Small 2012, 8, 3111-3115.
DOI Google Scholar
12

Radisavljevic, B.; Whitwick, M. B.; Kis, A. Integrated circuits and logic operations based on single-layer MoS2. ACS Nano 2011, 5, 9934-9938.
DOI Google Scholar
13

Lee, Y. H.; Zhang, X. Q.; Zhang, W. J.; Chang, M. T.; Lin, C. T.; Chang, K. D.; Yu, Y. C.; Wang, J. T. W.; Chang, C. S.; Li, L. J. et al. Synthesis of large-area MoS2 atomic layers with chemical vapor deposition. Adv. Mater. 2012, 24, 2320-2325.
DOI Google Scholar
14

Sundaram, R. S.; Engel, M.; Lombardo, A.; Krupke, R.; Ferrari, A. C.; Avouris, P.; Steiner, M. Electroluminescence in single layer MoS2. Nano Lett. 2013, 13, 1416-1421.
DOI Google Scholar
15

Huang, Z. Y.; Han, W. J.; Tang, H. L.; Ren, L.; Chander, D. S.; Qi, X.; Zhang, H. Photoelectrochemical-type sunlight photodetector based on MoS2/ graphene heterostructure. 2D Mater. 2015, 2, 035011.
DOI Google Scholar
16

Wachter, S.; Polyushkin, D. K.; Bethge, O.; Mueller, T. A microprocessor based on a two-dimensional semiconductor. Nat. Commun. 2017, 8, 14948.
DOI Google Scholar
17

Yu, C. H.; Fan, M. L.; Yu, K. C.; Hu, V. P. H.; Su, P.; Chuang, C. T. Evaluation of monolayer and bilayer 2-D transition metal dichalcogenide devices for SRAM applications. IEEE Trans. Electron Devices 2016, 63, 625-630.
DOI Google Scholar
18

Kshirsagar, C. U.; Xu, W. C.; Su, Y.; Robbins, M. C.; Kim, C. H.; Koester, S. J. Dynamic memory cells using MoS2 field-effect transistors demonstrating femtoampere leakage currents. ACS Nano 2016, 10, 8457-8464.
DOI Google Scholar
19

Kiriya, D.; Tosun, M.; Zhao, P. D.; Kang, J. S.; Javey, A. Air-stable surface charge transfer doping of MoS2 by benzyl viologen. J. Am. Chem. Soc. 2014, 136, 7853-7856.
DOI Google Scholar
20

Gong, Y. J.; Liu, Z.; Lupini, A. R.; Shi, G.; Lin, J. H.; Najmaei, S.; Lin, Z.; Elías, A. L.; Berkdemir, A.; You, G. et al. Band gap engineering and layer-by-layer mapping of selenium-doped molybdenum disulfide. Nano Lett. 2014, 14, 442-449.
DOI Google Scholar
21

Das, S.; Chen, H. Y.; Penumatcha, A. V.; Appenzeller, J. High performance multilayer MoS2 transistors with scandium contacts. Nano Lett. 2013, 13, 100-105.
DOI Google Scholar
22

Yoon, J.; Park, W.; Bae, G. Y.; Kim, Y.; Jang, H. S.; Hyun, Y.; Lim, S. K.; Kahng, Y. H.; Hong, W. K.; Lee, B. H. et al. Highly flexible and transparent multilayer MoS2 transistors with graphene electrodes. Small 2013, 9, 3295-3300.
Google Scholar
23

Liu, H.; Neal, A. T.; Ye, P. D. Channel length scaling of MoS2 MOSFETs. ACS Nano 2012, 6, 8563-8569.
DOI Google Scholar
24

Lee, Y. T.; Choi, K.; Lee, H. S.; Min, S. W.; Jeon, P. J.; Hwang, D. K.; Choi, H. J.; Im, S. Graphene versus ohmic metal as source-drain electrode for MoS2 nanosheet transistor channel. Small 2014, 10, 2356-2361.
DOI Google Scholar
25

Wang, Y.; Kim, J. C.; Wu, R. J.; Martinez, J.; Song, X. J.; Yang, J.; Zhao, F.; Mkhoyan, A.; Jeong, H. Y.; Chhowalla, M. Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors. Nature 2019, 568, 70-74.
DOI Google Scholar
26

Yang, L. M.; Majumdar, K.; Liu, H.; Du, Y. C.; Wu, H.; Hatzistergos, M.; Hung, P. Y.; Tieckelmann, R.; Tsai, W.; Hobbs, C. et al. Chloride molecular doping technique on 2D materials: WS2 and MoS2. Nano Lett. 2014, 14, 6275-6280.
DOI Google Scholar
27

Du, Y. C.; Liu, H.; Neal, A. T.; Si, M. W.; Ye, P. D. Molecular doping of multilayer MoS2 field-effect transistors: Reduction in sheet and contact resistances. IEEE Electron Device Lett. 2013, 34, 1328-1330.
DOI Google Scholar
28

Fang, H.; Tosun, M.; Seol, G.; Chang, T. C.; Takei, K.; Guo, J.; Javey, A. Degenerate n-doping of few-layer transition metal dichalcogenides by potassium. Nano Lett. 2013, 13, 1991-1995.
DOI Google Scholar
29

Xu, K.; Wang, Y.; Zhao, Y. D.; Chai, Y. Modulation doping of transition metal dichalcogenide/oxide heterostructures. J. Mater. Chem. C 2017, 5, 376-381.
DOI Google Scholar
30

Zhou, C. J.; Zhao, Y. D.; Raju, S.; Wang, Y.; Lin, Z. Y.; Chan, M. S.; Chai, Y. Carrier type control of WSe2 field-effect transistors by thickness modulation and MoO3 layer doping. Adv. Funct. Mater. 2016, 26, 4223-4230.
DOI Google Scholar
31

Chee, S. S.; Seo, D.; Kim, H.; Jang, H.; Lee, S.; Moon, S. P.; Lee, K. H.; Kim, S. W.; Choi, H.; Ham, M. H. Lowering the schottky barrier height by graphene/Ag electrodes for high-mobility MoS2 field-effect transistors. Adv. Mater. 2019, 31, 1804422.
DOI Google Scholar
32

Liu, Y.; Guo, J.; Zhu, E. B.; Liao, L.; Lee, S. J.; Ding, M. N.; Shakir, I.; Gambin, V.; Huang, Y.; Duan, X. F. Approaching the Schottky-Mott limit in van der Waals metal-semiconductor junctions. Nature 2018, 557, 696-700.
DOI Google Scholar
33

Zhang, X.; Grajal, J.; Vazquez-Roy, J. L.; Radhakrishna, U.; Wang, X. X.; Chern, W.; Zhou, L.; Lin, Y. X.; Shen, P. C.; Ji, X. et al. Two-dimensional MoS2-enabled flexible rectenna for Wi-Fi-band wireless energy harvesting. Nature 2019, 566, 368-372.
DOI Google Scholar
34

Kappera, R.; Voiry, D.; Yalcin, S. E.; Branch, B.; Gupta, G.; Mohite, A. D.; Chhowalla, M. Phase-engineered low-resistance contacts for ultrathin MoS2 transistors. Nat. Mater. 2014, 13, 1128-1134.
DOI Google Scholar
35

Müller, M. R.; Salazar, R.; Fathipour, S.; Xu, H.; Kallis, K.; Künzelmann, U.; Seabaugh, A.; Appenzeller, J.; Knoch, J. Gate-controlled WSe2 transistors using a buried triple-gate structure. Nanoscale Res. Lett. 2016, 11, 512.
DOI Google Scholar
36
Robbins, M. C.; Koester, S. J. Crystal-oriented black phosphorus TFETs with strong band-to-band-tunneling anisotropy and subthreshold slope nearing the thermionic limit. In Proceedings of 2017 IEEE International Electron Devices Meeting, San Francisco, CA, USA, 2017.https://doi.org/10.1109/IEDM.2017.8268399
DOI
37

Wang, Z. X.; Wang, F.; Yin, L.; Huang, Y.; Xu, K.; Wang, F. M.; Zhan, X. Y.; He, J. Electrostatically tunable lateral MoTe2 p-n junction for use in high-performance optoelectronics. Nanoscale 2016, 8, 13245-13250.
DOI Google Scholar
38

Xu, H. L.; Fathipour, S.; Kinder, E. W.; Seabaugh, A. C.; Fullerton-Shirey, S. K. Reconfigurable ion gating of 2H-MoTe2 field-effect transistors using poly(ethylene oxide)-CsClO4 solid polymer electrolyte. ACS Nano 2015, 9, 4900-4910.
DOI Google Scholar
39

Knoch, J.; Chen, Z. H.; Appenzeller, J. Properties of metal-graphene contacts. IEEE Trans. Nanotechnol. 2012, 11, 513-519.
DOI Google Scholar
40

Zhang, Y. B.; Tang, T. T.; Girit, C.; Hao, Z.; Martin, M. C.; Zettl, A.; Crommie, M. F.; Shen, Y. R.; Wang, F. Direct observation of a widely tunable bandgap in bilayer graphene. Nature 2009, 459, 820-823.
DOI Google Scholar
41

Das, A.; Pisana, S.; Chakraborty, B.; Piscanec, S.; Saha, S. K.; Waghmare, U. V.; Novoselov, K. S.; Krishnamurthy, H. R.; Geim, A. K.; Ferrari, A. C. et al. Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor. Nat. Nanotechnol. 2008, 3, 210-215.
DOI Google Scholar
42

Appenzeller, J.; Knoch, J.; Bjork, M. T.; Riel, H.; Schmid, H.; Riess, W. Toward nanowire electronics. IEEE Trans. Electron Devices 2008, 55, 2827-2845.
DOI Google Scholar
43

Appenzeller, J.; Lin, Y. M.; Knoch, J.; Avouris, P. Band-to-band tunneling in carbon nanotube field-effect transistors. Phys. Rev. Lett. 2004, 93, 196805.
DOI Google Scholar
44

Hisamoto, D.; Lee, W. C.; Kedzierski, J.; Takeuchi, H.; Asano, K.; Kuo, C.; Anderson, E.; Tsu-Jae, K.; Bokor, J.; Hu, C. M. FinFET-A self-aligned double-gate MOSFET scalable to 20 nm. IEEE Trans. Electron Devices 2000, 47, 2320-2325.
DOI Google Scholar
45

Bolshakov, P.; Khosravi, A.; Zhao, P.; Hurley, P. K.; Hinkle, C. L.; Wallace, R. M.; Young, C. D. Dual-gate MoS2 transistors with sub-10 nm top-gate high-k dielectrics. Appl. Phys. Lett. 2018, 112, 253502.
DOI Google Scholar
46
Nourbakhsh, A.; Zubair, A.; Huang, S.; Ling, X.; Dresselhaus, M. S.; Kong, J.; de Gendt, S.; Palacios, T. 15-nm channel length MoS2 FETs with single- and double-gate structures. In Proceedings of 2015 Symposium on VLSI Technology, Kyoto, Japan, 2015, pp T28-T29.https://doi.org/10.1109/VLSIT.2015.7223690
DOI
47

Liu, H.; Si, M. W.; Najmaei, S.; Neal, A. T.; Du, Y. C.; Ajayan, P. M.; Lou, J.; Ye, P. D. Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide films. Nano Lett. 2013, 13, 2640-2646.
DOI Google Scholar
48

Liu, H.; Ye, P. D. MoS2 dual-gate MOSFET with atomic-layer-deposited Al2O3 as top-gate dielectric. IEEE Electron Device Lett. 2012, 33, 546-548.
DOI Google Scholar
49

Liu, H.; Si, M. W.; Deng, Y. X.; Neal, A. T.; Du, Y. C.; Najmaei, S.; Ajayan, P. M.; Lou, J.; Ye, P. D. Switching mechanism in single-layer molybdenum disulfide transistors: An insight into current flow across schottky barriers. ACS Nano 2014, 8, 1031-1038.
DOI Google Scholar
50

Larentis, S.; Fallahazad, B.; Tutuc, E. Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers. Appl. Phys. Lett. 2012, 101, 223104.
DOI Google Scholar
51

Yin, Z. Y.; Li, H.; Li, H.; Jiang, L.; Shi, Y. M.; Sun, Y. H.; Lu, G.; Zhang, Q.; Chen, X. D.; Zhang, H. Single-layer MoS2 phototransistors. ACS Nano 2012, 6, 74-80.
DOI Google Scholar
52

Kim, J. H.; Kim, T. H.; Lee, H.; Park, Y. R.; Choi, W.; Lee, C. J. Thickness-dependent electron mobility of single and few-layer MoS2 thin-film transistors. AIP Adv. 2016, 6, 065106.
DOI Google Scholar
53

Bharathi, N. D.; Sivasankaran, K. Research progress and challenges of two dimensional MoS2 field effect transistors. J. Semicond. 2018, 39, 104002.
DOI Google Scholar
54

Ghibaudo, G. New method for the extraction of MOSFET parameters. Electron. Lett. 1988, 24, 543-545.
DOI Google Scholar
55

Zheng, X. R.; Calò, A.; Albisetti, E.; Liu, X. Y.; Alharbi, A. S. M.; Arefe, G.; Liu, X. C.; Spieser, M.; Yoo, W. J.; Taniguchi, T. et al. Patterning metal contacts on monolayer MoS2 with vanishing Schottky barriers using thermal nanolithography. Nat. Electron. 2019, 2, 17-25.
DOI Google Scholar
56

Sze, S. M.; Ng, K. K. Physics of Semiconductor Devices, 3rd ed.; Wiley: Hoboken, NJ, USA, 2007.
DOI
57

Singer, P. Dual gate control provides threshold voltage options. Semicond. Int. 2003, 26, 28.
Google Scholar
58

Ghatak, S.; Pal, A. N.; Ghosh, A. Nature of electronic states in atomically thin MoS2 field-effect transistors. ACS Nano 2011, 5, 7707-7712.
DOI Google Scholar
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Publication history
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Acknowledgements

Publication history

Received: 27 April 2019
Revised: 24 June 2019
Accepted: 12 July 2019
Published: 01 August 2019
Issue date: October 2019

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019

Acknowledgements

Acknowledgements

This work was supported by the National Key Research and Development Program of China (Nos. 2016YFA0203900 and 2018YFA0306101), Shanghai Municipal Science and Technology Commission (No. 18JC1410300) and Natural Science Foundation of China (No. 61874154).

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