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Research Article

Polarity control of carrier injection for nanowire feedback field-effect transistors

Doohyeok Lim, Sangsig Kim ( )
Department of Electrical Engineering,Korea University, 145 Anam-ro, Seongbuk-gu,Seoul,02841,Republic of Korea;
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Abstract

We present polarity control of the carrier injection for a feedback field-effect transistor (FBFET) with a selectively thinned p+-i-n+ Si nanowire (SiNW) channel and two separate gates. The SiNW FBFET can be reconfigured in the p- or n-channel operation modes via simple control of electric signals. The two separate gates induce potential barriers in the SiNW channel for selective control of the carrier injection. In contrast to previously reported reconfigurable transistors, our transistor features symmetry of the electrical characteristics for the p- and n-channel operation modes. Positive-feedback operation of the SiNW FBFET provides superior switching characteristics for the p- and n-type configurations, including the on/off ratios (~ 105) and subthreshold swings (1.36–1.78 mV/dec). This novel transistor is a promising candidate for reconfigurable electronics.

Keywords

silicon nanowirereconfigurable transistorpositive-feedback loopseparate gate

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Nano Research
Volume 12 Issue 10,
October 2019
Pages 2509-2514
DOI: 10.1007/s12274-019-2477-6
Cite this article:
Lim D, Kim S. Polarity control of carrier injection for nanowire feedback field-effect transistors. Nano Research, 2019, 12(10): 2509-2514. https://doi.org/10.1007/s12274-019-2477-6
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Nanowires

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Received: 02 April 2019
Revised: 08 June 2019
Accepted: 12 July 2019
Published: 01 August 2019
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019
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