457
Views
2
Crossref
N/A
WoS
4
Scopus
0
CSCD
In this paper, we propose a novel construction of silicon nanowire (SiNW) negative-AND (NAND) logic gates on bendable plastic substrates and describe their electrical characteristics. The NAND logic gates with SiNW channels are capable of operating with a supply voltage as low as 0.8 V, with switching and standby power consumption of approximately 1.1 and 0.068 nW, respectively. Superior electrical characteristics of each SiNW transistor, including steep subthreshold slopes, high Ion/off ratio, and symmetrical threshold voltages, are the major factors that enable nanowatt-range power operation of the logic gates. Moreover, the mechanical bendability of the logic gates indicates that they have good and stable fatigue properties.
This work was partly supported by the National Research Foundation of Korea (NRF) Grant funded by the Korean Government (MSIP) (Nos. NRF- 2013R1A2A1A03070750 and NRF-2015R1A2A1A15055437), the Brain Korea 21 Plus Project in 2016, Samsung Electronics, and Global Ph.D. Fellowship Program through the NRF funded by the Ministry of Education (No. NRF-2014H1A2A1021475).