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Research Article

Low-power functionality of silicon-nanowire-assembled inverters on bendable plastics

Youngin JeonMyeongwon LeeMinsuk KimYoonjoong KimSangsig Kim ( )
Department of Electrical EngineeringKorea University145 Anam-roSeongbuk-guSeoul02841Republic of Korea
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Abstract

In this paper, we demonstrate the low-power functionality of silicon nanowire (SiNW)-assembled inverters on bendable plastics. Our bendable inverters are capable of operating at supply voltages as low as 0.8 V with a switching (or standby) power consumption of ~0.2 nW (or ~6.6 pW). The low-power inverting operation with a voltage gain of ~18 is attributable to the near-ideal characteristics of the component transistors that have selectively thinned SiNW channels and exhibit low, symmetrical threshold voltages of 0.40 and?0.39 V and low sub-threshold swing values of 81 and 65 mV/dec. Moreover, mechanical bendability reveals that the inverting operation has good, stable fatigue properties.

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Nano Research
Pages 1409-1417

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Cite this article:
Jeon Y, Lee M, Kim M, et al. Low-power functionality of silicon-nanowire-assembled inverters on bendable plastics. Nano Research, 2016, 9(5): 1409-1417. https://doi.org/10.1007/s12274-016-1036-7

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Received: 22 November 2015
Revised: 24 January 2016
Accepted: 01 February 2016
Published: 29 September 2016
© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2016