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In this paper, we demonstrate the low-power functionality of silicon nanowire (SiNW)-assembled inverters on bendable plastics. Our bendable inverters are capable of operating at supply voltages as low as 0.8 V with a switching (or standby) power consumption of ~0.2 nW (or ~6.6 pW). The low-power inverting operation with a voltage gain of ~18 is attributable to the near-ideal characteristics of the component transistors that have selectively thinned SiNW channels and exhibit low, symmetrical threshold voltages of 0.40 and?0.39 V and low sub-threshold swing values of 81 and 65 mV/dec. Moreover, mechanical bendability reveals that the inverting operation has good, stable fatigue properties.

Publication history
Copyright
Acknowledgements

Publication history

Received: 22 November 2015
Revised: 24 January 2016
Accepted: 01 February 2016
Published: 29 September 2016
Issue date: May 2016

Copyright

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2016

Acknowledgements

Acknowledgements

This work was partly supported by the National Research Foundation of Korea (NRF) Grant funded by the Korean Government (MSIP) (Nos. NRF-2013R1A2A1A03070750 and NRF-2015R1A2A1A15055437), the Brain Korea 21 Plus Project in 2015, and Samsung Electronics.

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