Ballistic transport in single-layer MoS2 piezotronic transistors
),
Zhonglin Wang1,3(
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Because of the coupling between semiconducting and piezoelectric properties in wurtzite materials, strain-induced piezo-charges can tune the charge transport across the interface or junction, which is referred to as the piezotronic effect. For devices whose dimension is much smaller than the mean free path of carriers (such as a single atomic layer of MoS2), ballistic transport occurs. In this study, transport in the monolayer MoS2 piezotronic transistor is studied by presenting analytical solutions for two-dimensional (2D) MoS2. Furthermore, a numerical simulation for guiding future 2D piezotronic nanodevice design is presented.
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Ballistic transport in single-layer MoS2 piezotronic transistors
), Zhonglin Wang1,3(
)
Abstract
Because of the coupling between semiconducting and piezoelectric properties in wurtzite materials, strain-induced piezo-charges can tune the charge transport across the interface or junction, which is referred to as the piezotronic effect. For devices whose dimension is much smaller than the mean free path of carriers (such as a single atomic layer of MoS2), ballistic transport occurs. In this study, transport in the monolayer MoS2 piezotronic transistor is studied by presenting analytical solutions for two-dimensional (2D) MoS2. Furthermore, a numerical simulation for guiding future 2D piezotronic nanodevice design is presented.
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Acknowledgements
This work was supported by the "thousands talents" program for pioneer researcher and his innovation team, China, the National Natural Science Foundation of China (No. 51432005), and Beijing Municipal Commission of Science and Technology (Nos. Z131100006013005 and Z131100006013004).
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