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We present an ultrasensitive ultraviolet (UV) detector based on a p-type ZnS nanoribbon (NR)/indium tin oxide (ITO) Schottky barrier diode (SBD). The device exhibits a pseudo-photovoltaic behavior which can allow the SBD to detect UV light irradiation with incident power of 6 × 10-17 W (~85 photons/s on the NR) at room temperature, with excellent reproducibility and stability. The corresponding detectivity and photoconductive gain are calculated to be 3.1 × 1020 cm·Hz1/2·W-1 and 6.6 × 105, respectively. It is found that the presence of the trapping states at the p-ZnS NR/ITO interface plays a crucial role in determining the ultrahigh sensitivity of this nanoSBDs. Based on our theoretical calculation, even ultra-low photon fluxes on the order of several tens of photons could induce a significant change in interface potential and consequently cause a large photocurrent variation. The present study provides new opportunities for developing high-performance optoelectronic devices in the future.
The authors acknowledge the funding support from the National Basic Research Program of China (Grants Nos. 2013CB933900, 2014CB931800, and 2010CB934700), the Major Research Plan of the National Natural Science Foundation of China (Grants Nos. 91027021 and 91233110), the National High Technology Research and Development Program of China (Grant No. 2007AA03Z301), the National Natural Science Foundation of China (Grants Nos. 91022032, 21101051, 61106010, 51172151, 91227103, and 21431006), and the Natural Science Foundation of Anhui Province (Grant No. J2014AKZR0059).