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Research Article | Open Access

Thermoelectric Properties of p-Type PbSe Nanowires

Wenjie Liang1,3, Oded Rabin1,4, Allon I. Hochbaum1, Melissa Fardy1, Minjuan Zhang2, Peidong Yang1( )
Department of ChemistryUniversity of CaliforniaBerkeleyCA94720USA
Materials Research DepartmentToyota Technical CenterToyota Motor Engineering & Manufacturing North America (TEMA) Inc.1555 Woodridge Ave.Ann ArborMI48105USA
Current Address: Institute of PhysicsChinese Academy of SciencesBeijing100080China
Current Address: Department of Materials Science and Engineeringthe Institute for Research in Electronics and Applied PhysicsUniversity of MarylandCollege ParkMD20742USA
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Abstract

The thermoelectric properties of individual solution-phase synthesized p-type PbSe nanowires have been examined. The nanowires showed near degenerately doped charge carrier concentrations. Compared to the bulk, the PbSe nanowires exhibited a similar Seebeck coefficient and a significant reduction in thermal conductivity in the temperature range 20 K to 300 K. Thermal annealing of the PbSe nanowires allowed their thermoelectric properties to be controllably tuned by increasing their carrier concentration or hole mobility. After optimal annealing, single PbSe nanowires exhibited a thermoelectric figure of merit (ZT) of 0.12 at room temperature.

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Keywords

Nanowirethermoelectricsthermopowerthermal conductivitylead chalcogenide

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Nano Research
Volume 2 Issue 5,
May 2009
Pages 394-399
DOI: 10.1007/s12274-009-9039-2

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Cite this article:
Liang W, Rabin O, Hochbaum AI, et al. Thermoelectric Properties of p-Type PbSe Nanowires. Nano Research, 2009, 2(5): 394-399. https://doi.org/10.1007/s12274-009-9039-2

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Received: 12 February 2009
Revised: 11 March 2009
Accepted: 11 March 2009
Published: 01 May 2009
© Tsinghua University Press and Springer-Verlag 2009

This article is published with open access at Springerlink.com