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31 July 2008
Vertical Nanowire Array-Based Light Emitting Diodes
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Electroluminescence from a nanowire array-based light emitting diode is reported. The junction consists of a p-type GaN thin film grown by metal–organic chemical vapor deposition (MOCVD) and a vertical n-type ZnO nanowire array grown epitaxially from the thin film through a simple low temperature solution method. The fabricated devices exhibit diode like current–voltage behavior. Electroluminescence is visible to the human eye at a forward bias of 10 V and spectroscopy reveals that emission is dominated by acceptor to band transitions in the p-GaN thin film. It is suggested that the vertical nanowire architecture of the device leads to waveguided emission from the thin film through the nanowire array.
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Vertical Nanowire Array-Based Light Emitting Diodes
)
Abstract
Electroluminescence from a nanowire array-based light emitting diode is reported. The junction consists of a p-type GaN thin film grown by metal–organic chemical vapor deposition (MOCVD) and a vertical n-type ZnO nanowire array grown epitaxially from the thin film through a simple low temperature solution method. The fabricated devices exhibit diode like current–voltage behavior. Electroluminescence is visible to the human eye at a forward bias of 10 V and spectroscopy reveals that emission is dominated by acceptor to band transitions in the p-GaN thin film. It is suggested that the vertical nanowire architecture of the device leads to waveguided emission from the thin film through the nanowire array.
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Acknowledgements
This work was supported in part by the U.S. Department of Energy and DARPA-UPR. Work at the Lawrence Berkeley National Laboratory was supported by the Office of Science, Basic Energy Sciences, and Division of Materials Science of the U.S. Department of Energy. EL thanks Sandia National Laboratories for financial support through an educational fellowship.
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