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Research Article | Open Access

Nernst‐Effect‐Modulated Bilinear Magnetoelectric Resistance in Chiral Tellurium Nanosheets

Ying‐Ying Lan1Qing Yin1Pu Wang2( )Xin Liao1Jing‐Wei Dong1Tong‐Yang Zhao1Qingqing Ke3 An‐Qi Wang1( )Zhi‐Min Liao1,4( )Shenghuang Lin5,6 ( )
State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano‐optoelectronics, School of Physics, Peking University, Beijing, China
Institute of Semiconductor, Henan Academy of Sciences, Zhengzhou, China
School of Microelectronics Science and Technology, Sun Yat‐Sen University, Zhuhai, China
Hefei National Laboratory, Hefei, China
Dongguan Institute of Materials Science and Technology, Chinese Academy of Sciences, Dongguan, China
Songshan Lake Materials Laboratory, Dongguan, China

Ying‐Ying Lan, Qing Yin, and Pu Wang contributed equally to this study.

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Abstract

The chiral crystal structure and strong spin‐orbit coupling of tellurium (Te) make it an appealing platform for exploring unconventional radial spin textures, which can be probed via bilinear magnetoelectric resistance (BMR). Recent studies have consistently reported a pronounced BMR in Te nanosheets under in‐plane current and out‐of‐plane magnetic field, suggesting complex coexisting mechanisms. Here, to clarify this discrepancy, a systematic investigation on the second‐harmonic longitudinal resistance (R||2ω) is performed in the circular disc device made of single‐crystalline Te nanosheets. The R||2ω is found to be prominent under out‐of‐plane magnetic fields, in agreement with previous observations. Notably, the out‐of‐plane BMR reverses sign on opposite sides of the current path, which cannot be explained by spin texture considerations. Instead, the out‐of‐plane BMR is attributed to the Joule‐heating‐induced Nernst effect, as further supported by COMSOL thermal‐distribution simulations. These results reveal the crucial role of thermoelectric effects in modulating BMR in chiral crystals, offering new insight into the long‐standing discrepancy between experimental observations and theoretical predictions.

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Article number: e70089

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Cite this article:
Lan Y, Yin Q, Wang P, et al. Nernst‐Effect‐Modulated Bilinear Magnetoelectric Resistance in Chiral Tellurium Nanosheets. SmartMat, 2026, 7(3): e70089. https://doi.org/10.1002/smm2.70089

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Received: 27 February 2026
Revised: 22 March 2026
Accepted: 09 April 2026
Published: 28 June 2026
© 2026 The Author(s).

This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.