Nano Research

ISSN 1998-0124 e-ISSN 1998-0000 CN 11-5974/O4
Editors-in-Chief: Yadong Li, Shoushan Fan
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Research Article
Voltage-controlled reverse filament growth boosts resistive switching memory
https://doi.org/10.1007/s12274-018-1983-2
Published: 02 February 2018
2018, 11 (8): 4017-4025
Downloads: 16 | Views: 491 | PDF (747.7 KB)
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