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In this research, investigated characterization of pure and Cobalt doped Tin dioxide SnO2: Co with 3, 5 and 7wt% fabricated using radio frequency magnetron sputtering method deposited on glass surfaces. The results showed that prepared SnO2: Co were nano films and poly crystalline in form with favored reflection permanently (110) plan, and the crystallite size decreases as the Co concentration increased 9-14 nm. The optical properties represented by the transmittance of perspicuous and cobalt transplantation SnO2 layers were studied and results showed that highest transmittance obtained was 91% in the pure films and decreased to 78% as the Co concentration increased; the wavelength range was 300-900 nm due to be the increasing of the Co amount during the deposition, leading to a linear increase in mobility and carrier concentration, until a threshold of Co content was overcome and from that point onward the mobility began to decrease. Optical energy gaps of perspicuous and Co transplantation SnO2 nano layers were determined and the energy gap was reduced from 3.50 eV of perspicuous nano layers to 3.29 eV for the highest transplantation concentration.


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Influence of Co Transplantation SnO2 Nano Film on the Structural and Optical Properties Using Radio Frequency Magnetron Sputtering

Show Author's information Ehssan Hassan1Mohamed Odda Dawod1Zainab Kadhom Hamzh2Marwa Abdul Muhsien Hassan3( )
Department of Physics, College of Science, Mustansiriyah University, Baghdad, Iraq
College of Science, Mustansiriyah University, Baghdad, Iraq
Department of Physics, College of Science, Mustansiriyah University, Baghdad, Iraq

Abstract

In this research, investigated characterization of pure and Cobalt doped Tin dioxide SnO2: Co with 3, 5 and 7wt% fabricated using radio frequency magnetron sputtering method deposited on glass surfaces. The results showed that prepared SnO2: Co were nano films and poly crystalline in form with favored reflection permanently (110) plan, and the crystallite size decreases as the Co concentration increased 9-14 nm. The optical properties represented by the transmittance of perspicuous and cobalt transplantation SnO2 layers were studied and results showed that highest transmittance obtained was 91% in the pure films and decreased to 78% as the Co concentration increased; the wavelength range was 300-900 nm due to be the increasing of the Co amount during the deposition, leading to a linear increase in mobility and carrier concentration, until a threshold of Co content was overcome and from that point onward the mobility began to decrease. Optical energy gaps of perspicuous and Co transplantation SnO2 nano layers were determined and the energy gap was reduced from 3.50 eV of perspicuous nano layers to 3.29 eV for the highest transplantation concentration.

Keywords: RF sputters, Co doped SnO2, Radio frequency of 13.56 MHz, EDXS measurement

References(26)

[1]

V. Gokulakrishnan, S. Parthiban, K. Jeganathan, et al., Investigations of the Structural, Optical and Electrical Properties of Nb-Doped SnO2 Thin Films. J. Mater Sci., 2011, 4: 65553-5558.

[2]

A. Rydosz, A. Brudnik, and K. Staszek., Metal Oxide Thin Films Prepared by Magnetron Sputtering Technology for Volatile Organic Compound Detection in the Microwave Frequency Range. Materials (Basel), 2019, 12(6): 877.

[3]

Y. Ma, X. Zhang, W. Liu, et al., Stoichiometry Dependence of Physical and Electrochemical Properties of the SnOx Film Anodes Deposited by Pulse DC Magnetron Sputtering. Materials, 2021, 14(7): 1803.

[4]

L. Wang, L. Yin, Metal Oxide Gas Sensors: Sensitivity and Influencing Factors. Sensors, 2010, 10: 2088-2106.

[5]

Z. Florian, B. Daniel, Tin oxide-based nanomaterials and their application as anodes in lithium-ion batteries and beyond. Chem Sus Chem, 2019, 12: 4240-4259.

[6]

C. Kim, S. Kim, and S.E. Kim, Transparent SnOx thin films fabricated by radio frequency reactive sputtering with a SnO/Sn composite target. Thin Solid Films, 2017, 634: 175-180.

[7]
Thin Solid Films. 2017; 634: 175-180.
DOI
[8]

E. Eqbal, R. Raphael, K.J. Saji, et al., Fabrication of p-SnO/n-SnO2 transparent p-n junction diode by spray pyrolysis and extraction of device's intrinsic parameters. Mater Lett., 2019, 247: 211-214.

[9]

V. Gokulakrishnan, S. Parthiban, Investigations on The Structural, Optical and Electrical Properties of Nb-Doped SnO2 Thin Films, J. Mater Sci. , 2011, 46: 5553-5558.

[10]

S.D. Nehate, A. Prakash, Work function extraction of indium tin oxide films from MOSFET devices. ECS J Solid State Sci Technol., 2018, 7(3): 87-90.

[11]

D.E. Guzmán-Caballero, M.A. Quevedo-López, and R. Ramírez-Bon, Optical properties of p-type SnOx thin films deposited by DC reactive sputtering. J Mater Sci Mater Electron, 2019, 30(2): 1366-1373.

[12]

S. Vallejos, F. Di Maggio, T. Shujah, et al., Chemical Vapour Deposition of Gas Sensitive Metal Oxides. Chemosensors, 2016, 4(4).

[13]

J. Adawiya, S. Haider, S. Shaker, et al., A study of morphological, optical and gas sensing propertiesfor pure and Ag doped SnO2 prepared by pulsed laser deposition (PLD). Energy Procedia, 2013, 36: 776-787.

[14]
C. Sankara, V. Ponnuswamy, M. Manickama, et al., Structural, morphological, optical and gas sensing properties of pure and Ru doped SnO2 thin films by nebulizer spray pyrolysis technique, 2015, 349(15): 931-939.
DOI
[15]

T. Le, H.P. Dang, and V.H. Le, Determination of the optimum annealing temperature and time for Indium-doped SnO2 films to achieve the best p-type conductive property. Journal of Alloys and Compounds, 2017, 696 (5): 1314-1322.

[16]

N.H. Hong, J. Sakai, W. Prellier, et al., Transparent Cr-doped SnO2 thin films: ferromagnetism beyond room temperature with a giant magnetic moment. Phys.: Condens. Matter, 2005, 17(10): 1697.

[17]

S. Zhuang, X. Xu, Y. Pang, et al., Variation of structural, optical and magnetic properties with Co-doping in Sn1-xCoxO2 nanoparticles. Journal of Magnetism and Magnetic Materials, 2012, 40(9).

[18]
Joint Committee on Powder Diffraction Standards (JCPDS). International Centre for Diffraction Data, 1997, Card No. 41-1445.
[19]

N.F. Habubi, G.H. Mohamed, and S.F. Oboudi, Structural and electrical properties of cobalt doped SnO2 thin films. MSAIJ, 2014, 11(10): 321-326.

[20]

S.Y. Wang, B.L. Cheng, C. Wang, et al., Dielectric properties of Co-doped Ba0.5Sr0.5TiO3 thin films fabricated by pulsed laser deposition. Journal of Crystal Growth, 2003, 259 (1): 137-143.

[21]

B.P. Uberuaga, L.J. Vernon, and E. Martinez, The relationship between grain boundary structure, defect mobility, and grain boundary sink efficiency. Sci Rep., 2015, 5: 90-95.

[22]

J.W. Morris Jr., Chapter 4: Defects in Crystals, Materials Science, 2016.

[23]

M.A.M. Hassan, A.A. Hateef, Amperometric biosensor of SnO2 thin film modified by Pd, In and Ag nanostructure synthesized by CSP method. Applied Nanoscience, 2014, 4: 927-934.

[24]

M.A. Muhsien, E.T. Salem, Gas sensing of Au/n-SnO2/p-PSi/c-Si heterojunction devices prepared by rapid thermal oxidation. Applied Nanoscience, 2014, 4: 719-732.

[25]

M.A. Muhsien, Y. Al-Douri, E.T. Salim, et al., Synthesis of SnO2 nanostructures employing Nd: YAG laser. Applied Physics A, 2015, 120(2).

[26]

M.A. Muhsien, E.T. Salem, and I.R. Agool, Preparation and Characterization of (Au/n-Sn/Si/Si/Al) MIS Device for Optoelectronic Application. International Journal of Optics, 2013, 9.

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Publication history

Received: 15 April 2021
Accepted: 02 December 2021
Published: 07 January 2022
Issue date: March 2022

Copyright

© Ehssan Hassan, Mohamed Odda Dawod, Zainab Kadhom Hamzh, and Marwa Abdul Muhsien Hassan.

Acknowledgements

This research was propped by University of Mustansiriyah, College of Science, Department of Physics, Tribology and advanced materials Lab. and the group labor would like to thank the Ministry of Science and technology for provided that the needful backing and advice for RF-magnetron sputtering setup. Financial grants in this paper were not achieved from any foundation.

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This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

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