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Open Access

Developments and Applications of Tunneling Magnetoresistance Sensors

School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute of Beihang University, Qingdao 266100, China
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Abstract

Magnetic sensors based on tunneling magnetoresistance (TMR) effect exhibit high sensitivity, small size, and low power consumption. They have gained a lot of attention and have potential applications in various domains. This study first introduces the development history and basic principles of TMR sensors. Then, a comprehensive description of TMR sensors linearization and Wheatstone bridge configuration is presented. Two key performance parameters, the field sensitivity and noise mechanisms, are considered. Finally, the emerging applications of TMR sensors are discussed.

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Tsinghua Science and Technology
Pages 443-454

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Cite this article:
Yan S, Zhou Z, Yang Y, et al. Developments and Applications of Tunneling Magnetoresistance Sensors. Tsinghua Science and Technology, 2022, 27(3): 443-454. https://doi.org/10.26599/TST.2021.9010061

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Received: 27 February 2021
Revised: 30 June 2021
Accepted: 04 August 2021
Published: 13 November 2021
© The author(s) 2022

The articles published in this open access journal are distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/).