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Open Access

Advanced Process and Electron Device Technology

Dan Zhang, Xiaojing Su, Hao Chang, Hao Xu, Xiaolei Wang, Xiaobin He, Junjie Li, Fei Zhao, Qide Yao, Yanna Luo, Xueli Ma, Hong Yang, Yongliang Li, Zhenhua Wu, Yajuan Su, Tao Yang, Yayi Wei, Anyan Du, Huilong Zhu, Junfeng Li, Huaxiang Yin, Jun Luo, Tianchun Ye, Wenwu Wang( )
Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
University of Chinese Academy of Sciences, Beijing 100049, China
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Abstract

This article reviews advanced process and electron device technology of integrated circuits, including recent featuring progress and potential solutions for future development. In 5 years, for pushing the performance of fin field-effect transistors (FinFET) to its limitations, several processes and device boosters are provided. Then, the three-dimensional (3D) integration schemes with alternative materials and device architectures will pave paths for future technology evolution. Finally, it could be concluded that Moore’s law will undoubtedly continue in the next 15 years.

Keywords

advanced processgate-all-around devicesthree-dimensional (3D) integrationhigh-mobility channelintegrated circuits

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Tsinghua Science and Technology
Volume 27 Issue 3,
June 2022
Pages 534-558
DOI: 10.26599/TST.2021.9010049

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Cite this article:
Zhang D, Su X, Chang H, et al. Advanced Process and Electron Device Technology. Tsinghua Science and Technology, 2022, 27(3): 534-558. https://doi.org/10.26599/TST.2021.9010049

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Received: 08 March 2021
Revised: 04 July 2021
Accepted: 12 July 2021
Published: 13 November 2021
© The author(s) 2022

The articles published in this open access journal are distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/).