Investigation on n-Type (–201) β-Ga2O3 Ohmic Contact via Si Ion Implantation

Peipei Ma; Jun Zheng; Yabao Zhang; Zhi Liu; Yuhua Zuo; Buwen Cheng

doi:10.26599/TST.2021.9010039

Tsinghua Science and Technology 2023, 28(1): 150-154 https://doi.org/10.26599/TST.2021.9010039

Open Access | Issue | Published: 21 July 2022

Investigation on n-Type (–201) β-Ga₂O₃ Ohmic Contact via Si Ion Implantation

Show Author's Information Hide Author's Information Peipei Ma^{¹^,²}, Jun Zheng^{¹^,²}(

), Yabao Zhang^{¹^,²}, Zhi Liu^{¹^,²}, Yuhua Zuo^{¹^,²}, Buwen Cheng^{¹^,²}

1 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Keywords:

ohmic contact, ion implantation, β-Ga₂O₃, annealing activation

Cite this article:

Ma P, Zheng J, Zhang Y, et al. Investigation on n-Type (–201) β-Ga₂O₃ Ohmic Contact via Si Ion Implantation. Tsinghua Science and Technology, 2023, 28(1): 150-154. https://doi.org/10.26599/TST.2021.9010039

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Abstract

Heavy doped n-type $β$ -Ga $_{2}$ O $_{3}$ (HD-Ga $_{2}$ O $_{3}$ ) was obtained by employing Si ion implantation technology on unintentionally doped $β$ -Ga $_{2}$ O $_{3}$ single crystal substrates. To repair the Ga $_{2}$ O $_{3}$ lattice damage and activate the Si after implantation, the implanted substrates were annealed at 950℃, 1000℃, and 1100℃, respectively. High-resolution X-ray diffraction and high-resolution transmission electron microscopy show that the ion-implanted layer has high lattice quality after high-temperature annealing at 1000℃. The minimum specific contact resistance is 9.2×10^–5Ω·cm², which is attributed to the titanium oxide that is formed at the Ti/Ga $_{2}$ O $_{3}$ interface via rapid thermal annealing at 480℃. Based on these results, the lateral $β$ -Ga $_{2}$ O $_{3}$ diodes were prepared, and the diodes exhibit high forward current density and low specific on-resistance.

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About this article

Investigation on n-Type (–201) β-Ga₂O₃ Ohmic Contact via Si Ion Implantation

Show Author's information Hide Author's Information Peipei Ma^{¹^,²}, Jun Zheng^{¹^,²}(

), Yabao Zhang^{¹^,²}, Zhi Liu^{¹^,²}, Yuhua Zuo^{¹^,²}, Buwen Cheng^{¹^,²}

1 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Abstract

Keywords: ohmic contact, ion implantation, β-Ga₂O₃, annealing activation

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Publication history

Received: 22 April 2021

Accepted: 28 May 2021

Published: 21 July 2022

Issue date: February 2023

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Acknowledgements

This work was supported in part by the National Key Research and Development Program of China (No. 2018YFB2200500), the National Natural Science Foundation of China (No. 62050073, 62090054, and 61975196), and the Key Research Program of Frontier Sciences, CAS (No. QYZDY-SSW-JSC022).

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