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High-Voltage power Integrated Circuits (HVICs) are widely used to realize high-efficiency power conversions (e.g., AC/DC conversion), gate drivers for power devices and LED lighting, and so on. The Bipolar-CMOS-DMOS (BCD) process is proposed to fabricate devices with bipolar, CMOS, and DMOS modes, and thereby realize the single-chip integration of HVICs. The basic integrated technologies of HVICs include High-Voltage (HV) integrated device technology, HV interconnection technology, and isolation technology. The HV integrated device is the core of HVICs. The basic requirements of the HV integrated device are high breakdown voltage, low specific on-resistance, and process compatibility with low-voltage circuits. The REduced SURFace field (RESURF) technology and junction termination technology are developed to optimize the surface field of integration power devices and breakdown voltage. Furthermore, the ENhanced DIelectric layer Field (ENDIF) and REduced BULk Field (REBULF) technologies are proposed to optimize bulk fields. The double/triple RESURF technologies are further developed, and the superjunction concept is introduced to integrated power devices and to reduce the specific on-resistance. This work presents a comprehensive review of these technologies, including the innovation technologies of the authors’ group, such as ENDIF and REBULF, substrate termination technology prospective integrated technologies and HVICs in wide band gap semiconductor materials are also discussed.


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Review of Technologies for High-Voltage Integrated Circuits

Show Author's information Bo Zhang( )Wentong ZhangLe ZhuJian ZuMing QiaoZhaoji Li
State Key Laboratory of Electronic Thin Films and Integrated Devices, and School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China

Abstract

High-Voltage power Integrated Circuits (HVICs) are widely used to realize high-efficiency power conversions (e.g., AC/DC conversion), gate drivers for power devices and LED lighting, and so on. The Bipolar-CMOS-DMOS (BCD) process is proposed to fabricate devices with bipolar, CMOS, and DMOS modes, and thereby realize the single-chip integration of HVICs. The basic integrated technologies of HVICs include High-Voltage (HV) integrated device technology, HV interconnection technology, and isolation technology. The HV integrated device is the core of HVICs. The basic requirements of the HV integrated device are high breakdown voltage, low specific on-resistance, and process compatibility with low-voltage circuits. The REduced SURFace field (RESURF) technology and junction termination technology are developed to optimize the surface field of integration power devices and breakdown voltage. Furthermore, the ENhanced DIelectric layer Field (ENDIF) and REduced BULk Field (REBULF) technologies are proposed to optimize bulk fields. The double/triple RESURF technologies are further developed, and the superjunction concept is introduced to integrated power devices and to reduce the specific on-resistance. This work presents a comprehensive review of these technologies, including the innovation technologies of the authors’ group, such as ENDIF and REBULF, substrate termination technology prospective integrated technologies and HVICs in wide band gap semiconductor materials are also discussed.

Keywords:

High-Voltage ICs (HVICs), high-voltage integrated technology, Bipolar-CMOS-DMOS (BCD) process, integrated power semiconductor devices, superjunction
Received: 28 February 2021 Accepted: 08 April 2021 Published: 13 November 2021 Issue date: June 2022
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Received: 28 February 2021
Accepted: 08 April 2021
Published: 13 November 2021
Issue date: June 2022

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