AI Chat Paper
Note: Please note that the following content is generated by AMiner AI. SciOpen does not take any responsibility related to this content.
{{lang === 'zh_CN' ? '文章概述' : 'Summary'}}
{{lang === 'en_US' ? '中' : 'Eng'}}
Chat more with AI
Powered by AMiner. Clicking this button will take you away from SciOpen.
Home Tsinghua Science and Technology Article
PDF (4.3 MB)
Cite
EndNote(RIS) BibTeX
Collect
Submit Manuscript AI Chat Paper
Show Outline
Outline
Show full outline
Hide outline
Outline
Show full outline
Hide outline
Open Access

Ambipolar Transport Compact Models for Two-Dimensional Materials Based Field-Effect Transistors

Zhaoyi Yan, Guangyang Gou, Jie Ren, Fan Wu, Yang Shen, He Tian( ), Yi Yang ( ), Tian-Ling Ren( )
Institute of Microelectronics, Tsinghua University, Beijing 100084, China
Institute of Microelectronics, and Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing 100084, China
Show Author Information

Abstract

Three main ambipolar compact models for Two-Dimensional (2D) materials based Field-Effect Transistors (2D-FETs) are reviewed: (1) Landauer model, (2) 2D Pao-Sah model, and (3) virtual Source Emission-Diffusion (VSED) model. For the Landauer model, the Gauss quadrature method is applied, and it summarizes all kinds of variants, exhibiting its state-of-art. For the 2D Pao-Sah model, the aspects of its theoretical fundamentals are rederived, and the electrostatic potentials of electrons and holes are clarified. A brief development history is compiled for the VSED model. In summary, the Landauer model is naturally appropriate for the ballistic transport of short channels, and the 2D Pao-Sah model is applicable to long-channel devices. By contrast, the VSED model offers a smooth transition between ultimate cases. These three models cover a fairly completed channel length range, which enables researchers to choose the appropriate compact model for their works.

Keywords

Field-Effect Transistor (FET)compact modelambipolar transportLandauer formulaPao-Sah modelvirtual source

References

[1]
L. K. Li, Y. J. Yu, G. J. Ye, X. H. Chen, and Y. B. Zhang, Electronic properties of few-layer black phosphorus, Bull. Am. Phys. Soc., vol. 58, no. 1, p. 1, 2013.
Google Scholar
[2]
L. K. Li, Y. J. Yu, G. J. Ye, Q. Q. Ge, X. D. Ou, H. Wu, D. L. Feng, X. H. Chen, and Y. B. Zhang, Black phosphorus field-effect transistors, Nat. Nanotechnol., vol. 9, no. 5, pp. 372–377, 2014.
Google Scholar
[3]
H. Liu, A. T. Neal, Z. Zhu, Z. Luo, X. F. Xu, D. Tománek, and P. D. Ye, Phosphorene: An unexplored 2D semiconductor with a high hole mobility, ACS Nano, vol. 8, no. 4, pp. 4033–4041, 2014.
Google Scholar
[4]
Y. C. Du, H. Liu, Y. X. Deng, and P. D. Ye, Device perspective for black phosphorus field-effect transistors: Contact resistance, ambipolar behavior, and scaling, ACS Nano, vol. 8, no. 10, pp. 10 035–10 042, 2014.
Google Scholar
[5]
H. O. H. Churchill and P. Jarillo-Herrero, Phosphorus joins the family, Nat. Nanotechnol., vol. 9, no. 5, pp. 330–331, 2014.
Google Scholar
[6]
R. Gusmão, Z. Sofer, and M. Pumera, Black phosphorus rediscovered: From bulk material to monolayers, Angew. Chem., Int. Ed., vol. 56, no. 28, pp. 8052–8072, 2017.
Google Scholar
[7]
Y. Ren and F. Cheng, Ballistic transport through a strained region on monolayer phosphorene, Chin. Phys. Lett., vol. 34, no. 2, p. 027302, 2017.
Google Scholar
[8]
Z. Nourbakhsh and R. Asgari, Charge transport in doped zigzag phosphorene nanoribbons, Phys. Rev. B, vol. 97, p. 235406, 2018.
Google Scholar
[9]
X. F. Li, Z. Q. Yu, X. Xiong, T. Y. Li, T. T. Gao, R. S. Wang, R. Huang, and Y. Q. Wu, High-speed black phosphorus field-effect transistors approaching ballistic limit, Sci. Adv., vol. 5, no. 6, p. eaau3194, 2019.
Google Scholar
[10]
N. R. Pradhan, D. Rhodes, Y. Xin, S. Memaran, L. Bhaskaran, M. Siddiq, S. Hill, P. M. Ajayan, and L. Balicas, Ambipolar molybdenum diselenide field-effect transistors: Field-effect and hall mobilities, ACS Nano, vol. 8, no. 8, pp. 7923–7929, 2014.
Google Scholar
[11]
S. Das and J. Appenzeller, WSe2 field effect transistors with enhanced ambipolar characteristics, Appl. Phys. Lett., vol. 103, no. 10, p. 103501, 2013.
Google Scholar
[12]
Z. G. Wang, Q. Li, Y. F. Chen, B. X. Cui, Y. R. Li, F. Besenbacher, and M. D. Dong, The ambipolar transport behavior of WSe2 transistors and its analogue circuits, NPG Asia Mater., vol. 10, no. 8, pp. 703–712, 2018.
Google Scholar
[13]
C. Q. Yin, Y. X. Li, J. B. Wang, X. F. Wang, Y. Yang, and T. L. Ren, Carbon nanotube transistor with short-term memory, Tsinghua Science and Technology, vol. 21, no. 4, pp. 442–448, 2016.
Google Scholar
[14]
Y. Ren, X. Y. Yang, L. Zhou, J. Y. Mao, S. T. Han, and Y. Zhou, Recent advances in ambipolar transistors for functional applications, Adv. Funct. Mater., vol. 29, no. 40, p. 1902105, 2019.
Google Scholar
[15]
P. Wu, D. Reis, X. S. Hu, and J. Appenzeller, Two-dimensional transistors with reconfigurable polarities for secure circuits, Nat. Electron., vol. 4, no. 1, pp. 45–53, 2021.
Google Scholar
[16]
A. Castellanos-Gomez, Black phosphorus: Narrow gap, wide applications, J. Phys. Chem. Lett., vol. 6, no. 21, pp. 4280–4291, 2015.
Google Scholar
[17]
W. N. Hu, Z. Sheng, X. Hou, H. W. Chen, Z. X. Zhang, D. W. Zhang, and P. Zhou, Ambipolar 2D semiconductors and emerging device applications, Small Methods, vol. 5, no. 1, p. 2000837, 2021.
Google Scholar
[18]
G. Gildenblat, Compact Modeling: Principles, Techniques and Applications. Dordrecht, the Netherlands: Springer, 2010.
[19]
J. S. Qiao, X. H. Kong, Z. X. Hu, F. Yang, and W. Ji, High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus, Nat. Commun., vol. 5, no. 1, p. 4475, 2014.
Google Scholar
[20]
S. J. Liu, N. J. Huo, S. Gan, Y. Li, Z. M. Wei, B. J. Huang, J. Liu, J. B. Li, and H. D. Chen, Thickness-dependent Raman spectra, transport properties and infrared photoresponse of few-layer black phosphorus, J. Mater. Chem. C, vol. 3, no. 42, pp. 10 974–10 980, 2015.
Google Scholar
[21]
A. N. Rudenko and M. I. Katsnelson, Quasiparticle band structure and tight-binding model for single- and bilayer black phosphorus, Phys. Rev. B, vol. 89, p. 201408(R), 2014.
Google Scholar
[22]
X. X. Cui, D. Han, H. L. Guo, L. W. Zhou, J. S. Qiao, Q. Liu, Z. H. Cui, Y. F. Li, C. W. Lin, L. M. Cao, et al., Realizing nearly-free-electron like conduction band in a molecular film through mediating intermolecular van der Waals interactions, Nat. Commun., vol. 10, p. 3374, 2019.
Google Scholar
[23]
K. Ko, M. Kang, J. Jeon, and H. Shin, Compact model strategy of metal-gate work-function variation for Ultrascaled FinFET and vertical GAA FETs, IEEE Trans. Electron Devices, vol. 66, no. 3, pp. 1613–1616, 2019.
Google Scholar
[24]
H. C. Pao and C. T. Sah, Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors, Solid-State Electron., vol. 9, no. 10, pp. 927–937, 1966.
Google Scholar
[25]
C. Gupta, R. Goel, H. Agarwal, C. M. Hu, and Y. S. Chauhan, BSIM-BULK: Accurate compact model for analog and RF circuit design, presented at IEEE Custom Integrated Circuits Conf., Austin, TX, USA, 2019, pp. 1–8.
[26]
J. G. Champlain, On the use of the term “ambipolar”, Appl. Phys. Lett., vol. 99, p. 123502, 2011.
Google Scholar
[27]
P. Wu, T. Ameen, H. R. Zhang, L. A. Bendersky, H. Ilatikhameneh, G. Klimeck, R. Rahman, A. V. Davydov, and J. Appenzeller, Complementary black phosphorus tunneling field-effect transistors, ACS Nano, vol. 13, no. 1, pp. 377–385, 2019.
Google Scholar
[28]
D. J. Perello, S. H. Chae, S. Song, and Y. H. Lee, High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering, Nat. Commun., vol. 6, p. 7809, 2015.
Google Scholar
[29]
M. Lundstrom, Fundamentals of Carrier Transport. 2nd ed. Cambridge, UK: Cambridge University Press, 2000.
[30]
S. Das, W. Zhang, M. Demarteau, A. Hoffmann, M. Dubey, and A. Roelofs, Tunable transport gap in phosphorene, Nano Lett., vol. 14, no. 10, pp. 5733–5739, 2014.
Google Scholar
[31]
S. Das, M. Demarteau, and A. Roelofs, Ambipolar phosphorene field effect transistor, ACS Nano, vol. 8, no. 11, pp. 11 730–11 738, 2014.
Google Scholar
[32]
I. S. Esqueda, C. D. Cress, Y. C. Che, Y. Cao, and C. W. Zhou, Charge trapping in aligned single-walled carbon nanotube arrays induced by ionizing radiation exposure, J. Appl. Phys., vol. 115, p. 054506, 2014.
Google Scholar
[33]
A. V. Penumatcha, R. B. Salazar, and J. Appenzeller, Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model, Nat. Commun., vol. 6, p. 8948, 2015.
Google Scholar
[34]
I. S. Esqueda, H. Tian, X. D. Yan, and H. Wang, Transport properties and device prospects of ultrathin black phosphorus on hexagonal boron nitride, IEEE Trans. Electron Devices, vol. 64, no. 12, pp. 5163–5171, 2017.
Google Scholar
[35]
S. Datta, Lessons from Nanoelectronics: A New Perspective on Transport– Part A: Basic Concepts. 2nd ed. Singapore: World Scientific Publishing, 2017.
[36]
R. H. Yan, A. Ourmazd, and K. F. Lee, Scaling the Si MOSFET: From bulk to SOI to bulk, IEEE Trans. Electron Devices, vol. 39, no. 7, pp. 1704–1710, 1992.
Google Scholar
[37]
N. Haratipour, S. Namgung, S. H. Oh, and S. J. Koester, Fundamental limits on the subthreshold slope in Schottky source/drain black phosphorus field-effect transistors, ACS Nano, vol. 10, no. 3, pp. 3791–3800, 2016.
Google Scholar
[38]
M. C. Robbins, N. Haratipour, and S. J. Koester, Band-to-band tunneling limited ambipolar current in black phosphorus MOSFETs, in Proc. 75th Annual Device Research Conf., South Bend, IN, USA, 2017, pp. 1–2.
[39]
S. Datta, Electronic Transport in Mesoscopic Systems. Cambridge, UK: Cambridge University Press, 1995.
[40]
I. S. Esqueda, C. D. Cress, Y. Cao, Y. Che, M. Fritze, and C. Zhou, The impact of defect scattering on the quasi-ballistic transport of nanoscale conductors, J. Appl. Phys., vol. 117, p. 084319, 2015.
Google Scholar
[41]
F. Liu, Y. J. Wang, X. Y. Liu, J. Wang, and H. Guo, Ballistic transport in monolayer black phosphorus transistors, IEEE Trans. Electron Devices, vol. 61, no. 11, pp. 3871–3876, 2014.
Google Scholar
[42]
Y. Q. Cai, G. Zhang, and Y. W. Zhang, Layer-dependent band alignment and work function of few-layer phosphorene, Sci. Rep., vol. 4, p. 6677, 2014.
Google Scholar
[43]
J. Kim, S. S. Baik, S. H. Ryu, Y. Sohn, S. Park, B. G. Park, J. Denlinger, Y. J. Yi, H. J. Choi, and K. S. Kim, Observation of tunable band gap and anisotropic Dirac semimetal state in black phosphorus, Science, vol. 349, no. 6249, pp. 723–726, 2015.
Google Scholar
[44]
B. C. Deng, V. Tran, Y. J. Xie, H. Jiang, C. Li, Q. S. Guo, X. M. Wang, H. Tian, S. J. Koester, H. Wang, et al., Efficient electrical control of thin-film black phosphorus bandgap, Nat. Commun., vol. 8, p. 14474, 2017.
Google Scholar
[45]
B. Jiang, X. M. Zou, J. Su, J. H. Liang, J. L. Wang, H. J. Liu, L. P. Feng, C. Z. Jiang, F. Wang, J. He, et al., Impact of thickness on contact issues for pinning effect in black phosphorus field-effect transistors, Adv. Funct. Mater., vol. 28, no. 26, p. 1801398, 2018.
Google Scholar
[46]
S. Y. Lee, W. S. Yun, and J. D. Lee, New method to determine the Schottky barrier in few-layer black phosphorus metal contacts, ACS Appl. Mater. Interfaces, vol. 9, no. 8, pp. 7873–7877, 2017.
Google Scholar
[47]
Y. Z. Guo and J. Robertson, Band offsets and metal contacts in monolayer black phosphorus, Microelectron. Eng., vol. 178, pp. 108–111, 2017.
Google Scholar
[48]
J. A. Nelder and R. Mead, A simplex method for function minimization, Comput. J., vol. 7, no. 4, pp. 308–313, 1965.
Google Scholar
[49]
A. Gil, J. Segura, and N. M. Temme, Numerical Methods for Special Functions. Philadelphia, PA, USA: Society for Industrial and Applied Mathematics, 2007.
[50]
J. J. Sakurai and J. J. Napolitano, Modern Quantum Mechanics. 2nd ed. Cambridge, UK: Cambridge University Press, 2017.
[51]
K. F. Brennan and C. J. Summers, Theory of resonant tunneling in a variably spaced multiquantum well structure: An Airy function approach, J. Appl. Phys., vol. 61, no. 2, pp. 614–623, 1987.
Google Scholar
[52]
R. A. Vega, On the modeling and design of Schottky field-effect transistors, IEEE Trans. Electron Devices, vol. 53, no. 4, pp. 866–874, 2006.
Google Scholar
[53]
X. M. Guan, D. Kim, K. C. Saraswat, and H. S. P. Wong, Complex band structures: From parabolic to elliptic approximation, IEEE Electron Device Lett., vol. 32, no. 9, pp. 1296–1298, 2011.
Google Scholar
[54]
J. Callaway, Quantum Theory of the Solid State. New York, NY, USA: Academic Press, 1976.
[55]
X. D. Yan, H. Wang, and I. S. Esqueda, Temperature-dependent transport in ultrathin black phosphorus field-effect transistors, Nano Lett., vol. 19, no. 1, pp. 482–487, 2019.
Google Scholar
[56]
C. Guo, L. Wang, H. Z. Xing, and X. S. Chen, The study of ambipolar behavior in phosphorene field-effect transistors, J. Appl. Phys., vol. 120, p. 215701, 2016.
Google Scholar
[57]
E. G. Marin, S. J. Bader, and D. Jena, A new holistic model of 2-D semiconductor FETs, IEEE Trans. Electron Devices, vol. 65, no. 3, pp. 1239–1245, 2018.
Google Scholar
[58]
E. Yarmoghaddam, N. Haratipour, S. J. Koester, and S. Rakheja, A physics-based compact model for ultrathin black phosphorus FETs – Part I: Effect of contacts, temperature, ambipolarity, and traps, IEEE Trans. Electron Devices, vol. 67, no. 1, pp. 389–396, 2020.
Google Scholar
[59]
E. Yarmoghaddam, N. Haratipour, S. J. Koester, and S. Rakheja, A physics-based compact model for ultrathin black phosphorus FETs – Part II: Model validation against numerical and experimental data, IEEE Trans. Electron Devices, vol. 67, no. 1, pp. 397–405, 2020.
Google Scholar
[60]
A. Ueda, Y. J. Zhang, N. Sano, H. Imamura, and Y. Iwasa, Ambipolar device simulation based on the drift-diffusion model in ion-gated transition metal dichalcogenide transistors, NPJ Comput. Mater., vol. 6, p. 24, 2020.
Google Scholar
[61]
C. T. Sah, The spatial variation of the quasi-Fermi potentials in p-n junctions, IEEE Trans. Electron Devices, vol. ED-13, no. 12, pp. 839–846, 1966.
Google Scholar
[62]
C. T. Sah, Characteristics of the metal-oxide-semiconductor transistors, IEEE Trans. Electron Devices, vol. 11, no. 7, pp. 324–345, 1964.
Google Scholar
[63]
N. W. Ashcroft and N. D. Mermin, Solid State Physics. Philadelphia, PA, USA: Saunders College, 1976.
[64]
J. R. Schrieffer, Effective carrier mobility in surface-space charge layers, Phys. Rev., vol. 97, p. 641, 1955.
Google Scholar
[65]
R. F. Greene, D. R. Frankl, and J. Zemel, Surface transport in semiconductors, Phys. Rev., vol. 118, p. 967, 1960.
Google Scholar
[66]
R. F. Greene, Nonlocal transport and cuspidal surface mobility in semiconductors, Phys. Rev., vol. 131, p. 592, 1963.
Google Scholar
[67]
R. H. Kingston and S. F. Neustadter, Calculation of the space charge, electric field, and free carrier concentration at the surface of a semiconductor, J. Appl. Phys., vol. 26, p. 718, 1955.
Google Scholar
[68]
F. Stern and W. E. Howard, Properties of semiconductor surface inversion layers in the electric quantum limit, Phys. Rev., vol. 163, p. 816, 1967.
Google Scholar
[69]
F. Stern, Self-consistent results for n-type Si inversion layers, Phys. Rev. B, vol. 5, p. 4891, 1972.
Google Scholar
[70]
R. B. Dingle, The Fermi-Dirac integrals Fp⁢(η)=(p!)-1⁢∫o∞ϵp⁢(eϵ-η+1)-1⁢d⁢ϵ, Appl. Sci. Res., Sect. B, vol. 6, no. 1, pp. 225–239, 1957.
Google Scholar
[71]
T. Fukushima, Precise and fast computation of Fermi–Dirac integral of integer and half integer order by piecewise minimax rational approximation, Appl. Math. Comput., vol. 259, pp. 708–729, 2015.
Google Scholar
[72]
O. N. Koroleva, A. V. Mazhukin, V. I. Mazhukin, and P. V. Breslavskiy, Analytical approximation of the Fermi-Dirac integrals of half-integer and integer orders, Math. Models Comput. Simul., vol. 9, no. 3, pp. 383–389, 2017.
Google Scholar
[73]
G. T. Wright, Threshold modelling of MOSFETs for CAD of CMOS-VLSI, Electron. Lett., vol. 21, no. 6, pp. 223–224, 1985.
Google Scholar
[74]
G. Mugnaini and G. Iannaccone, Physics-based compact model of nanoscale MOSFETs–Part I: Transition from drift-diffusion to ballistic transport, IEEE Trans. Electron Devices, vol. 52, no. 8, pp. 1795–1801, 2005.
Google Scholar
[75]
F. Telesio, G. le Gal, M. Serrano-Ruiz, F. Prescimone, S. Toffanin, M. Peruzzini, and S. Heun, Ohmic contact engineering in few-layer black phosphorus: Approaching the quantum limit, Nanotechnology, vol. 31, p. 334002, 2020.
Google Scholar
[76]
Y. J. Xu, Z. Shi, X. Y. Shi, K. Zhang, and H. Zhang, Recent progress in black phosphorus and black-phosphorus-analogue materials: Properties, synthesis and applications, Nanoscale, vol. 11, no. 31, pp. 14 491–14 527, 2019.
Google Scholar
[77]
Y. Tsividis and C. McAndrew, Operation and Modeling of the MOS Transistor. 3rd ed. Oxford, UK: Oxford University Press, 2011.
[78]
N. Ma and D. Jena, Charge scattering and mobility in atomically thin semiconductors, Phys. Rev. X, vol. 4, p. 011043, 2014.
Google Scholar
[79]
B. C. Yang, B. S. Wan, Q. H. Zhou, Y. Wang, W. T. Hu, W. M. Lv, Q. Chen, Z. M. Zeng, F. S. Wen, J. Y. Xiang, et al., Te-doped black phosphorus field-effect transistors, Adv. Mater., vol. 28, no. 42, pp. 9408–9415, 2016.
Google Scholar
[80]
D. Xiang, C. Han, J. Wu, S. Zhong, Y. Y. Liu, J. D. Lin, X. A. Zhang, W. P. Hu, B. Özyilmaz, A. H. C. Neto, et al., Surface transfer doping induced effective modulation on ambipolar characteristics of few-layer black phosphorus, Nat. Commun., vol. 6, p. 6485, 2015.
Google Scholar
[81]
A. Castellanos-Gomez, L. Vicarelli, E. Prada, J. O. Island, K. L. Narasimha-Acharya, S. I. Blanter, D. J. Groenendijk, M. Buscema, G. A. Steele, J. V. Alvarez, et al., Isolation and characterization of few-layer black phosphorus, 2D Mater., vol. 1, no. 2, p. 025001, 2014.
Google Scholar
[82]
L. Wei, O. Mysore, and D. Antoniadis, Virtual-source-based self-consistent current and charge FET models: From ballistic to drift-diffusion velocity-saturation operation, IEEE Trans. Electron Devices, vol. 59, no. 5, pp. 1263–1271, 2012
Google Scholar
[83]
S. Rakheja, Y. Q. Wu, H. Wang, T. Palacios, P. Avouris, and D. A. Antoniadis, An ambipolar virtual-source-based charge-current compact model for nanoscale graphene transistors, IEEE Trans. Nanotechnol., vol. 13, no. 5, pp. 1005–1013, 2014.
Google Scholar
[84]
S. Rakheja, M. S. Lundstrom, and D. A. Antoniadis, An improved virtual-source-based transport model for quasi-ballistic transistors–Part I: Capturing effects of carrier degeneracy, drain-bias dependence of gate capacitance, and nonlinear channel-access resistance, IEEE Trans. Electron Devices, vol. 62, no. 9, pp. 2786–2793, 2015.
Google Scholar
[85]
S. Rakheja, M. S. Lundstrom, and D. A. Antoniadis, An improved virtual-source-based transport model for quasi-ballistic transistors–Part II: Experimental verification, IEEE Trans. Electron Devices, vol. 62, no. 9, pp. 2794–2801, 2015.
Google Scholar
[86]
D. H. Kim, J. A. del Alamo, D. A. Antoniadis, and B. Brar, Extraction of virtual-source injection velocity in sub-100 nm III-V HFETs, presented at 2009 IEEE Int. Electron Devices Meeting (IEDM), Baltimore, MD, USA, 2009, pp. 1–4.
[87]
A. Nourbakhsh, A. Zubair, R. N. Sajjad, K. G. A. Tavakkoli, W. Chen, S. Fang, X. Ling, J. Kong, M. S. Dresselhaus, E. Kaxiras, et al., MoS2 field-effect transistor with Sub-10 nm channel length, Nano Lett., vol. 16, no. 12, pp. 7798–7806, 2016.
Google Scholar
[88]
S. Rakheja, M. Lundstrom, and D. Antoniadis, A physics-based compact model for FETs from diffusive to ballistic carrier transport regimes, presented at 2014 IEEE Int. Electron Devices Meeting, San Francisco, CA, USA, 2014, pp. 35.1.1–35.1.4.
[89]
M. Lundstrom, S. Datta, and X. S. Sun, Emission-diffusion theory of the MOSFET, IEEE Trans. Electron Devices, vol. 62, no. 12, pp. 4174–4178, 2015.
Google Scholar
[90]
E. Yarmoghaddam, N. Haratipour, S. J. Koester, and S. Rakheja, A virtual-source emission-diffusion I-V model for ultra-thin black phosphorus field-effect transistors, J. Appl. Phys., vol. 125, p. 165706, 2019.
Google Scholar
[91]
C. R. Crowell and S. M. Sze, Current transport in metal-semiconductor barriers, Solid State Electron., vol. 9, no. 11–12, pp. 1035–1048, 1966.
Google Scholar
[92]
A. Owczarek, Punch-through phenomenon in MOS transistors, Electron Technol., vol. 13, nos. 1&†2, pp. 55–65, 1980.
Google Scholar
[93]
M. S. Lundstrom and D. A. Antoniadis, Compact models and the physics of nanoscale FETs, IEEE Trans. Electron Devices, vol. 61, no. 2, pp. 225–233, 2014.
Google Scholar
[94]
C. S. Lee, E. Pop, A. D. Franklin, W. Haensch, and H. S. P. Wong, A compact virtual-source model for carbon nanotube FETs in the sub-10-nm regime–Part I: Intrinsic elements, IEEE Trans. Electron Devices, vol. 62, no. 9, pp. 3061–3069, 2015.
Google Scholar
[95]
C. S. Lee, E. Pop, A. D. Franklin, W. Haensch, and H. S. P. Wong, A compact virtual-source model for carbon nanotube FETs in the Sub-10-nm regime–Part II: Extrinsic elements, performance assessment, and design optimization, IEEE Trans. Electron Devices, vol. 62, no. 9, pp. 3070–3078, 2015.
Google Scholar
[96]
D. A. Antoniadis, I. Aberg, C. N. Chléirigh, O. M. Nayfeh, A. Khakifirooz, and J. L. Hoyt, Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations, IBM J. Res. Dev., vol. 50, nos. 4&†5, pp. 363–376, 2006.
Google Scholar
[97]
A. Khakifirooz and D. A. Antoniadis, Transistor performance scaling: The role of virtual source velocity and its mobility dependence, presented at 2006 Int. Electron Devices Meeting, San Francisco, CA, USA, 2006, pp. 1–4.
[98]
A. Khakifirooz, O. M. Nayfeh, and D. Antoniadis, A simple semiempirical short-channel MOSFET current-voltage model continuous across all regions of operation and employing only physical parameters, IEEE Trans. Electron Devices, vol. 56, no. 8, pp. 1674–1680, 2009.
Google Scholar
[99]
M. Lundstrom, Elementary scattering theory of the Si MOSFET, IEEE Electron Device Lett., vol. 18, no. 7, pp. 361–363, 1997.
Google Scholar
[100]
K. Natori, Ballistic metal-oxide-semiconductor field effect transistor, J. Appl. Phys., vol. 76, no. 8, pp. 4879–4890, 1994.
Google Scholar
[101]
Y. Liu, M. Luisier, A. Majumdar, D. A. Antoniadis, and M. S. Lundstrom, On the interpretation of ballistic injection velocity in deeply scaled MOSFETs, IEEE Trans. Electron Devices, vol. 59, no. 4, pp. 994–1001, 2012.
Google Scholar
[102]
A. Rahman, J. Guo, S. Datta, and M. S. Lundstrom, Theory of ballistic nanotransistors, IEEE Trans. Electron Devices, vol. 50, no. 9, pp. 1853–1864, 2003.
Google Scholar
Tsinghua Science and Technology
Volume 26 Issue 5,
October 2021
Pages 574-591
DOI: 10.26599/TST.2020.9010064
Cite this article:
Yan Z, Gou G, Ren J, et al. Ambipolar Transport Compact Models for Two-Dimensional Materials Based Field-Effect Transistors. Tsinghua Science and Technology, 2021, 26(5): 574-591. https://doi.org/10.26599/TST.2020.9010064

1117

Views

59

Downloads

4

Crossref

2

Web of Science

2

Scopus

0

CSCD

Altmetrics
Received: 28 November 2020
Accepted: 16 December 2020
Published: 20 April 2021
© The author(s) 2021

© The author(s) 2021. The articles published in this open access journal are distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/).
Return