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Ambipolar Transport Compact Models for Two-Dimensional Materials Based Field-Effect Transistors
Keywords:
Field-Effect Transistor (FET), compact model, ambipolar transport, Landauer formula, Pao-Sah model, virtual source
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Yan Z, Gou G, Ren J, et al.
Ambipolar Transport Compact Models for Two-Dimensional Materials Based Field-Effect Transistors.
Tsinghua Science and Technology,
2021, 26(5): 574-591.
https://doi.org/10.26599/TST.2020.9010064
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Three main ambipolar compact models for Two-Dimensional (2D) materials based Field-Effect Transistors (2D-FETs) are reviewed: (1) Landauer model, (2) 2D Pao-Sah model, and (3) virtual Source Emission-Diffusion (VSED) model. For the Landauer model, the Gauss quadrature method is applied, and it summarizes all kinds of variants, exhibiting its state-of-art. For the 2D Pao-Sah model, the aspects of its theoretical fundamentals are rederived, and the electrostatic potentials of electrons and holes are clarified. A brief development history is compiled for the VSED model. In summary, the Landauer model is naturally appropriate for the ballistic transport of short channels, and the 2D Pao-Sah model is applicable to long-channel devices. By contrast, the VSED model offers a smooth transition between ultimate cases. These three models cover a fairly completed channel length range, which enables researchers to choose the appropriate compact model for their works.
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Ambipolar Transport Compact Models for Two-Dimensional Materials Based Field-Effect Transistors
Abstract
Three main ambipolar compact models for Two-Dimensional (2D) materials based Field-Effect Transistors (2D-FETs) are reviewed: (1) Landauer model, (2) 2D Pao-Sah model, and (3) virtual Source Emission-Diffusion (VSED) model. For the Landauer model, the Gauss quadrature method is applied, and it summarizes all kinds of variants, exhibiting its state-of-art. For the 2D Pao-Sah model, the aspects of its theoretical fundamentals are rederived, and the electrostatic potentials of electrons and holes are clarified. A brief development history is compiled for the VSED model. In summary, the Landauer model is naturally appropriate for the ballistic transport of short channels, and the 2D Pao-Sah model is applicable to long-channel devices. By contrast, the VSED model offers a smooth transition between ultimate cases. These three models cover a fairly completed channel length range, which enables researchers to choose the appropriate compact model for their works.
Keywords:
Field-Effect Transistor (FET), compact model, ambipolar transport, Landauer formula, Pao-Sah model, virtual source
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Received: 28 November 2020
Accepted: 16 December 2020
Published:
20 April 2021
Issue date: October 2021
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© The author(s) 2021
Acknowledgements
This work was supported by the National Key R&D Program (Nos. 2016YFA0200400 and 2018YFC2001202), and the National Natural Science Foundation of China (Nos. 61434001, 61574083, 61874065, 51861145202, and U20A20168). The authors were also thankful for the support of the Research Fund from Tsinghua University Initiative Scientific Research Program, Beijing Innovation Center for Future Chip, Beijing Natural Science Foundation (No. 4184091), and Tsinghua-Fuzhou Institute for Date Technology (No. TFIDT2018008).
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© The author(s) 2021. The articles published in this open access journal are distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/).
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