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Nano Research Energy 2023, 2: e9120073 https://doi.org/10.26599/NRE.2023.9120073
Research Article | Open Access | Issue | Published: 16 May 2023

Synchronous defect passivation of all-inorganic perovskite solar cells enabled by fullerene interlayer

Show Author's Information Yanbo Shang1,  Pu Wang1,  Lingbo Jia1,  Xingcheng Li1,  Weitao Lian1,  Peisen Qian1,  Muqing Chen2,  Tao Chen1,  Yalin Lu1,  Shangfeng Yang1( )
CAS Key Laboratory of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China
School of Environment and Civil Engineering, Dongguan University of Technology, Dongguan 523808, China
Keywords:
thermal stability, electron transport layer, all-inorganic perovskite solar cells, defect passivation, fullerene derivative
Cite this article:
Shang Y, Wang P, Jia L, et al. Synchronous defect passivation of all-inorganic perovskite solar cells enabled by fullerene interlayer. Nano Research Energy, 2023, 2: e9120073. https://doi.org/10.26599/NRE.2023.9120073
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Abstract Full text Electronic supplementary material About this article

All-inorganic CsPbI3–xBrx perovskite solar cells (PSCs) are advantageous in terms of high thermal stability, while its efficiency lags behind those of organic-inorganic hybrid perovskite counterparts. Defect passivations have been extensively applied for enhancing efficiency of all-inorganic PSCs, which are mainly based on univocal defect passivation of perovskite layer. Herein, we incorporated a bis-dimethylamino-functionalized fullerene derivative (abbreviated as PCBDMAM) as an interlayer between ZnO electron transport layer (ETL) and all-inorganic CsPbI2.25Br0.75 perovskite layer, accomplishing synchronous defect passivations of both layers and consequently dramatic enhancements of efficiency and thermal stability of PSC devices. Upon spin-coating PCBDMAM onto ZnO ETL, the surface defects of ZnO especially oxygen vacancies can be effectively passivated due to the formation of Zn−N ionic bonds. In addition, PCBDMAM incorporation affords effective passivation of PbI and IPb antisite defects within the atop perovskite layer as well via coordination bonding with Pb2+. As a result, the regular-structure planar CsPbI2.25Br0.75 PSC device delivers a champion power conversion efficiency (PCE) of 17.04%, which surpasses that of the control device (15.44%). Moreover, the PCBDMAM-incorporated PSC device maintains ~ 80% of its initial PCE after 600 h heating at 85 °C hot plate in N2 atmosphere, whereas PCE of the control device degrades rapidly to ~ 62% after 460 h heating under identical conditions. Hence, PCBDMAM incorporation benefited dramatic improvement of the thermal stability of PSC device.


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About this article

Synchronous defect passivation of all-inorganic perovskite solar cells enabled by fullerene interlayer

Show Author's information Yanbo Shang1, Pu Wang1, Lingbo Jia1, Xingcheng Li1, Weitao Lian1, Peisen Qian1, Muqing Chen2, Tao Chen1, Yalin Lu1, Shangfeng Yang1( )
CAS Key Laboratory of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China
School of Environment and Civil Engineering, Dongguan University of Technology, Dongguan 523808, China

Abstract

All-inorganic CsPbI3–xBrx perovskite solar cells (PSCs) are advantageous in terms of high thermal stability, while its efficiency lags behind those of organic-inorganic hybrid perovskite counterparts. Defect passivations have been extensively applied for enhancing efficiency of all-inorganic PSCs, which are mainly based on univocal defect passivation of perovskite layer. Herein, we incorporated a bis-dimethylamino-functionalized fullerene derivative (abbreviated as PCBDMAM) as an interlayer between ZnO electron transport layer (ETL) and all-inorganic CsPbI2.25Br0.75 perovskite layer, accomplishing synchronous defect passivations of both layers and consequently dramatic enhancements of efficiency and thermal stability of PSC devices. Upon spin-coating PCBDMAM onto ZnO ETL, the surface defects of ZnO especially oxygen vacancies can be effectively passivated due to the formation of Zn−N ionic bonds. In addition, PCBDMAM incorporation affords effective passivation of PbI and IPb antisite defects within the atop perovskite layer as well via coordination bonding with Pb2+. As a result, the regular-structure planar CsPbI2.25Br0.75 PSC device delivers a champion power conversion efficiency (PCE) of 17.04%, which surpasses that of the control device (15.44%). Moreover, the PCBDMAM-incorporated PSC device maintains ~ 80% of its initial PCE after 600 h heating at 85 °C hot plate in N2 atmosphere, whereas PCE of the control device degrades rapidly to ~ 62% after 460 h heating under identical conditions. Hence, PCBDMAM incorporation benefited dramatic improvement of the thermal stability of PSC device.

Keywords: thermal stability, electron transport layer, all-inorganic perovskite solar cells, defect passivation, fullerene derivative

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Received: 14 February 2023
Revised: 01 April 2023
Accepted: 18 April 2023
Published: 16 May 2023
Issue date: September 2023

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© The Author(s) 2023. Published by Tsinghua University Press.

Acknowledgements

Acknowledgements

This work was partially supported by the National Natural Science Foundation of China (Nos. 51925206, U1932214, and 52172053). We acknowledge Xunyun Lei and Prof. Hualin Zeng for help with TRPL measurements.

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