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Nano Research Energy 2023, 2: e9120069 https://doi.org/10.26599/NRE.2023.9120069
Research Article | Open Access | Issue | Published: 24 April 2023

Enabling monodisperse perovskite phase with buried interface modification toward efficient light-emitting diodes

Show Author's Information Maowei Jiang1,§( ),  Xiaomeng Zhang1,§,  Feijiu Wang2( )
Key Laboratory for Special Functional Materials (Ministry of Education of China), National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials Science, Henan University, Kaifeng 475004, China
Henan Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng 475004, China

§ Maowei Jiang and Xiaomeng Zhang contributed equally to this work.

Keywords:
perovskite light-emitting diode, defect passivation, buried interface, monodisperse phase, large area device
Cite this article:
Jiang M, Zhang X, Wang F. Enabling monodisperse perovskite phase with buried interface modification toward efficient light-emitting diodes. Nano Research Energy, 2023, 2: e9120069. https://doi.org/10.26599/NRE.2023.9120069
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Abstract Full text Electronic supplementary material About this article

The performance of perovskite light-emitting diodes (PeLEDs) has been drastically improved recently. Therein, the coexistence of polydisperse perovskite domains has been one worthy subject of study. The crystallization of perovskite is affected by the buried interface character with the bottom contact layer; and the trap states also inherently exist at the buried interface of the perovskite film, which induce the nonradiative recombination and impede the PeLED performance. In this work, we focus on the crystallization modulation of monodisperse perovskite nanodomains toward high-performance PeLEDs. We show that a LiBr pre-modification layer on the bottom substrate induces the formation of monodisperse perovskite phase. In this system, the carrier transferring process deriving from the polydisperse phases is reduced. In addition, the LiBr pre-modification layer at the buried interface minimizes the trap states and enhances the radiative recombination of perovskites. Accordingly, our PeLEDs show a champion external quantum efficiency (EQE) of 25.5% for 4 mm2 device, and 22.9% for 100 mm2 device.


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About this article

Enabling monodisperse perovskite phase with buried interface modification toward efficient light-emitting diodes

Show Author's information Maowei Jiang1,§( ), Xiaomeng Zhang1,§, Feijiu Wang2( )
Key Laboratory for Special Functional Materials (Ministry of Education of China), National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials Science, Henan University, Kaifeng 475004, China
Henan Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng 475004, China

§ Maowei Jiang and Xiaomeng Zhang contributed equally to this work.

Abstract

The performance of perovskite light-emitting diodes (PeLEDs) has been drastically improved recently. Therein, the coexistence of polydisperse perovskite domains has been one worthy subject of study. The crystallization of perovskite is affected by the buried interface character with the bottom contact layer; and the trap states also inherently exist at the buried interface of the perovskite film, which induce the nonradiative recombination and impede the PeLED performance. In this work, we focus on the crystallization modulation of monodisperse perovskite nanodomains toward high-performance PeLEDs. We show that a LiBr pre-modification layer on the bottom substrate induces the formation of monodisperse perovskite phase. In this system, the carrier transferring process deriving from the polydisperse phases is reduced. In addition, the LiBr pre-modification layer at the buried interface minimizes the trap states and enhances the radiative recombination of perovskites. Accordingly, our PeLEDs show a champion external quantum efficiency (EQE) of 25.5% for 4 mm2 device, and 22.9% for 100 mm2 device.

Keywords: perovskite light-emitting diode, defect passivation, buried interface, monodisperse phase, large area device

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Received: 14 March 2023
Revised: 03 April 2023
Accepted: 04 April 2023
Published: 24 April 2023
Issue date: September 2023

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© The Author(s) 2023. Published by Tsinghua University Press.

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The authors gratefully acknowledge financial support from the National Natural Science Foundation of China (No. 22105061).

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