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Due to its remarkable electrical and optical capabilities, optoelectronic devices based on the semiconducting single-walled carbon nanotube (s-SWCNT) have been studied extensively in the last two decades. First, s-SWCNT is a direct bandgap semiconductor with a high infrared absorption coefficient and high electron/hole mobility. In addition, as a typical one-dimensional material, there is no lattice mismatch between s-SWCNT and any substrates. Another advantage is that the optoelectronic devices of s-SWCNT can be processed at low temperatures. s-SWCNT has intriguing potential and applications in solar cells, light-emitting diodes (LEDs), photodetectors, and three-dimensional (3D) optoelectronic integration. In recent years, along with the advancement of solution purification technology, the high-purity s-SWCNTs film has laid the foundation for constructing large-area, homogenous, and high-performance optoelectronic devices. In this review, optoelectronic devices based on s-SWCNTs film and related topics are reviewed, including the preparation of high purity s-SWCNTs film, the progress of photodetectors based on the s-SWCNTs film, and challenges of s-SWCNTs film photodetectors.

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Recent progress of photodetector based on carbon nanotube film and application in optoelectronic integration

Show Author's information Xiang Cai1,2Sheng Wang1,2( )Lian-Mao Peng1( )
Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, School of Electronics, Peking University, Beijing 100871, China
State Key Laboratory of Advanced Optical Communication System and Networks, School of Electronics, Peking University, Beijing 100871, China


Due to its remarkable electrical and optical capabilities, optoelectronic devices based on the semiconducting single-walled carbon nanotube (s-SWCNT) have been studied extensively in the last two decades. First, s-SWCNT is a direct bandgap semiconductor with a high infrared absorption coefficient and high electron/hole mobility. In addition, as a typical one-dimensional material, there is no lattice mismatch between s-SWCNT and any substrates. Another advantage is that the optoelectronic devices of s-SWCNT can be processed at low temperatures. s-SWCNT has intriguing potential and applications in solar cells, light-emitting diodes (LEDs), photodetectors, and three-dimensional (3D) optoelectronic integration. In recent years, along with the advancement of solution purification technology, the high-purity s-SWCNTs film has laid the foundation for constructing large-area, homogenous, and high-performance optoelectronic devices. In this review, optoelectronic devices based on s-SWCNTs film and related topics are reviewed, including the preparation of high purity s-SWCNTs film, the progress of photodetectors based on the s-SWCNTs film, and challenges of s-SWCNTs film photodetectors.

Keywords: carbon nanotube, photodetectors, optoelectronic integration, high purity semiconducting single-walled carbon nanotubes (s-SWCNTs) film



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Publication history
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Publication history

Received: 06 December 2022
Revised: 03 February 2023
Accepted: 15 February 2023
Published: 16 March 2023
Issue date: June 2023


© The Author(s) 2023. Published by Tsinghua University Press.



This work was supported by the National Key Research & Development Program (No. 2020YFA0714703), National Science Foundation of China (Nos. 62071008 and U21A6004), and Ji Hua Laboratory (No. 2021B0301030003).

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