Scalable ultrafast non-volatile two-dimensional floating-gate memory arrays based on Y₂O₃/HfO₂ hybrid dielectrics

The growing demands of artificial intelligence hardware have exposed a fundamental latency bottleneck in conventional floating-gate memory arrays. Although two-dimensional (2D) floating-gate memories have achievd nanosecond-level operations, their large-scale integration remains hindered by the scalability issues of the commonly used hBN dielectric layer. Here, we demonstrate scalable ultrafast non-volatile floating-gate memory arrays with hybrid Y₂O₃/HfO₂ dielectrics as the tunneling layer, achieving ~60 ns ultrafast programming/erasing speeds, high extinction ratios up to ~10⁹, long-term data retention approaching 10⁵ s, and robust cycling endurance exceeding 1800 cycles with multi-bit storage capabilities. A 5 × 5 memory array shows outstanding uniformity in memory window sizes, on/off ratios, and programmed/erased threshold voltages. Furthermore, the floating‑gate memory devices also demonstrate efficient optical erasure with 1,441 A/W responsivity and 9×10¹⁶ Jones detectivity. The promising uniformity of these memory arrays highlights the potential for larger-scale integration and its scalability for high-density storage and photodetection applications.