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Research Article | Open Access

Geometrically frustrated antiferromagnetic order transition in two-dimensional van der Waals semiconductor MnIn2Se4

Bingbing Lyu1,2,3,4 Shuo Wang1Haiyan Zhu2Yupeng Zhu2Haimeng Wang1Chengzhe Chen1Cuiying Hu1Yeyang Guo1Jihui Fan1Xiji Shao5 ( )Yuantao Chen2( )Jifeng Shao6 ( )Mingyuan Huang2 ( )Yilin Wang1,4 ( )
School of Integrated Circuits, Shandong Key Laboratory of Next-Generation Semiconductor Technology and Systems, Shandong University, Jinan 250100, China
Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
School of Physics, Harbin Institute of Technology, Harbin 150001, China
Shenzhen Research Institute of Shandong University, Shenzhen 518057, China
Department of Physics, School of Intelligent Engineering, Shaoguan University, Shaoguan 512005, China
Marine Science and Technology Domain, Beijing Institute of Technology, Zhuhai 519088, China
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Abstract

The geometrically frustrated antiferromagnetism, revealing non-mean-field ordering mechanisms through partial order, quantum fluctuations, and criticality, has long been a central focus in condensed matter physics for probing and manipulating novel phases of matter. However, the direct experimental observation of the phase transition associated with this frustrated antiferromagnetic order, termed “hidden order”, in two-dimensional systems remains a significant challenge. This is primarily due to the scarcity of suitable candidate materials and the limitations of conventional measurement techniques. Here, we investigate the magnetic properties of MnIn2Se4, a promising candidate for studying such transitions. Using a combination of polarized Raman spectroscopy, density functional theory (DFT), and Monte Carlo simulations calculations, we observe this geometrically frustrated antiferromagnetism order that persists from the spin-freezing temperature of 3.5 K up to 180 K. This transition is characterized by pronounced magneto-optical scattering phenomena, manifested by two distinct broad spectral regions of continuous magnetic states, with inflection points emerging at 180 K. Additionally, we detect temperature-dependent quasi-elastic scattering (QES) and Fano resonance, further confirming the magnetic order change. The presence of geometrically frustrated interactions in this material provides a natural explanation for the observed extended temperature range of the partial order phase. These findings establish MnIn2Se4 as a promising material platform for investigating frustration-driven phase transitions and the underlying mechanisms of high-temperature superconductivity and quantum bits. The insights gained into the interplay between thermal fluctuation effects on magnetic interactions may open new avenues for designing functional semiconductor devices with tunable magnetic and topological characteristics.

Graphical Abstract

A hidden magnetic order transition associated with geometrically frustrated antiferromagnetism was discovered in MnIn2Se4 at 180 K. This transition, observed via polarized Raman spectroscopy combined with theoretical calculations, manifests as a pronounced magneto-optical scattering response.

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Nano Research
Article number: 94908938

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Cite this article:
Lyu B, Wang S, Zhu H, et al. Geometrically frustrated antiferromagnetic order transition in two-dimensional van der Waals semiconductor MnIn2Se4. Nano Research, 2026, 19(10): 94908938. https://doi.org/10.26599/NR.2026.94908938

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Received: 24 April 2026
Revised: 10 June 2026
Accepted: 15 June 2026
Published: 09 August 2026
© The Author(s) 2026. Published by Tsinghua University Press.

This is an open access article under the terms of the Creative Commons Attribution 4.0 International License (CC BY 4.0, https://creativecommons.org/licenses/by/4.0/).