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Research Article | Open Access

Angular-independent magnetoresistance in Fe3GeTe2-based van der Waals spintronic heterostructures

Yuxin Tian1,§ , Kun Ye1,§ , Yi Wang1,§ , Xueqi Guo1 , Xinyu Gao1 , Yonghao Sun1 , Mengfan Zhao1 , Zhiyan Jia1 ( ), Fang Zhang2 ( ), Yong Jiang1 ( )
Institute of Quantum Materials and Devices, State Key Laboratory of Advanced Separation Membrane Materials, School of Materials Science and Engineering, Tiangong University, Tianjin 300387, China
School of Physical Science and Technology, Tiangong University, Tianjin 300387, China

§ Yuxin Tian, Kun Ye, and Yi Wang contributed equally to this work.

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Abstract

Two-dimensional (2D) spintronic devices based on van der Waals (vdW) heterostructures have potential applications in magnetic sensing and data storage. Here, we report vdW heterostructures fabricated by stacking an exfoliated ultrathin black phosphorus (BP) or violet phosphorus (VP) spacer between two exfoliated ferromagnetic Fe3GeTe2 (FGT) electrodes. The devices achieve high magnetoresistance (MR) ratios of 40.4% and 31.5% for the FGT/BP/FGT and FGT/VP/FGT heterostructures at low temperature, respectively. The magnitude of MR can be tuned by bias current and spacer thickness. Moreover, magnetotransport measurements confirm robust spin valve effect, showing angular-independent MR in FGT-based heterostructures. Our work opens a new avenue for the application of monoelemental phosphorus as spacer in novel spintronic devices.

Graphical Abstract

All-van der Waals (vdW) vertical spin-valve heterostructures based on Fe3GeTe2 (FGT) electrodes and phosphorus spacers are constructed. The FGT/black phosphorus (BP)/FGT and FGT/violet phosphorus (VP)/FGT devices show distinct spin-valve behavior with sizable magnetoresistance at low temperature, while the angular-dependent measurements demonstrate a nearly angle-independent magnetoresistance (MR) response from 0° to 360°. These results indicate that black phosphorus and violet phosphorus can serve as effective spacer layers for robust two-dimensional vdW spintronic devices.

Keywords

magnetoresistance (MR)angular-independentFe3GeTe2spin valvephosphorus

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Nano Research
Volume 19 Issue 10,
October 2026
Article number: 94908859
DOI: 10.26599/NR.2026.94908859

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Cite this article:
Tian Y, Ye K, Wang Y, et al. Angular-independent magnetoresistance in Fe3GeTe2-based van der Waals spintronic heterostructures. Nano Research, 2026, 19(10): 94908859. https://doi.org/10.26599/NR.2026.94908859

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Received: 02 March 2026
Revised: 29 April 2026
Accepted: 21 May 2026
Published: 22 July 2026
© The Author(s) 2026. Published by Tsinghua University Press.

This is an open access article under the terms of the Creative Commons Attribution 4.0 International License (CC BY 4.0, https://creativecommons.org/licenses/by/4.0/).