Abstract
Metallic MoO2 is promising to be one of noble-metal-comparable SERS substrate materials based on the strong electromagnetic mechanism (EM) enhancement. However, the SERS performance is still unable to meet the practical application requirements. Synthesizing large-scale 2D metallic MoO2 with controllable thickness, even at atomic level is an effective solution, but it has rarely been reported. The enhancement mechanism based on such kind of metallic metal oxide SERS substrates also lacks a more systematic study. Here, submillimeter-scale (~466 μm) atomic-thin (~4 nm) metallic MoO2 was firstly synthesized by chemical vapor deposition (CVD). What’s more, it shows high sensitivity as SERS substrates with a maximum enhancement factor up to 107 and a limit of detection down to 10-9 M, which is at a high level among most metal oxide-based SERS substrates and even comparable to the values of noble metal substrates with ‘hot spots’. It was also firstly and systematically found that both the EM (SPR effect) and CM (charge transfer process) enhancements exist simultaneously in such MoO2 substrate. The key lies in the thickness of MoO2 that determines the dominant enhancement mechanism. MoO2 flakes not only possess noble-metal-comparable SERS performance, but also show potential in image security and information encryption.

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