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Research Article | Open Access

Dry-state single-atom Pt engineering on crystalline carbon nitride for integrated hydrogen evolution and neuromorphic computing

Yongfeng Lu1,§Xinxin Zhuo1,§Wenhao Sun1,2,§Chuiying Yang3Jingwen Pan2,4Mikaela Görlin2Alexandre Holmes5Ergang Wang5Xiao Fang1Zihan Zhang6Rajeev Ahuja6Wei Luo6Huipeng Chen3 ( )Jiefang Zhu2,7 ( )Yuanhui Zheng1,8 ( )
College of Chemistry, Fuzhou University, Fuzhou 350116, China
Department of Chemistry–Ångström, Ångström Laboratory, Uppsala University, SE-75121, Uppsala, Sweden
Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
College of School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
Department of Chemistry and Chemical Engineering, Chalmers University of Technology, Göteborg SE-412 96, Sweden
Materials Theory, Department of Physics and Astronomy, Uppsala University, SE-75121, Uppsala, Sweden
The Key Laboratory for Ultrafine Materials of The Ministry of Education, East China University of Science and Technology, Shanghai 200237, China
Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, College of Chemistry, Fuzhou University, Fuzhou 350108, China

§ Yongfeng Lu, Xinxin Zhuo, and Wenhao Sun contributed equally to this work.

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Abstract

Precise construction of high-density single-atom active centers on polymeric semiconductors, together with concurrent regulation of their interfacial charge-transfer behavior, remains a central challenge for both photocatalytic energy conversion and neuromorphic electronics. Yet conventional wet photodeposition routes suffer from solvent-induced coordination distortion, defect formation, and limited metal dispersion. Here, we report a solvent-free dry-state in situ photoreduction strategy that anchors atomically dispersed Pt onto highly crystalline carbon nitride (AD-Pt-HCCN), achieving a Pt precursor conversion efficiency of 70.5%, which is 5.5 times higher than that of wet photodeposition. High-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM), X-ray photoelectron spectroscopy (XPS), and X-ray absorption fine structure (XAFS) collectively confirm uniformly distributed Pt single atoms coordinated in a quasi-fivefold configuration within triazine-heptazine frameworks. This coordination environment suppresses the formation of a classical nanoparticle-induced Schottky-type barrier and promotes ultrafast interfacial charge extraction, as supported by femtosecond transient absorption (fs-TA), photoluminescence (PL), time-resolved PL (TRPL), and electrochemical impedance spectroscopy (EIS) analyses. As a result, a photocatalytic H2 evolution rate of 5.8 mmol·g−1·h−1 is achieved, outperforming the counterpart prepared by conventional wet photodeposition (3.8 mmol·g−1·h−1), owing to the synergistic contributions of the increased Pt loading efficiency and the enhanced interfacial charge transfer induced by atomically dispersed Pt sites. Remarkably, the same atomic Pt sites serve as efficient charge-modulation centers in neuromorphic transistors, enabling pronounced excitatory postsynaptic current (EPSC)/inhibitory postsynaptic current (IPSC) responses, robust long-term potentiation/depression (LTP/LTD), and linear, hardware-relevant synaptic weight updates. Integrating experimentally extracted conductance states into an artificial neural network (ANN) framework yields high recognition accuracy of 98.6%, highlighting the broad potential of AD-Pt-HCCN as a multifunctional building block for energy-intelligence convergence.

Graphical Abstract

A solvent-free dry-state photoreduction strategy anchors densely dispersed Pt single atoms onto highly crystalline carbon nitride, creating a quasi-fivefold Pt configuration environment that removes Schottky barriers and accelerates charge extraction. These atomic centers simultaneously boost hydrogen evolution and modulate synaptic plasticity, enabling a unified material platform that couples efficient energy conversion with hardware-relevant neuromorphic computing.

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Article number: 94908796

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Cite this article:
Lu Y, Zhuo X, Sun W, et al. Dry-state single-atom Pt engineering on crystalline carbon nitride for integrated hydrogen evolution and neuromorphic computing. Nano Research, 2026, 19(10): 94908796. https://doi.org/10.26599/NR.2026.94908796
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Received: 09 February 2026
Revised: 10 April 2026
Accepted: 30 April 2026
Published: 12 August 2026
© The Author(s) 2026. Published by Tsinghua University Press.

This is an open access article under the terms of the Creative Commons Attribution 4.0 International License (CC BY 4.0, https://creativecommons.org/licenses/by/4.0/).