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Research Article | Open Access

Self-driven and ultrabroadband polarized photoresponse in BP/Nb2SiTe4 heterostructures for selective polarization-based encryption-decryption and recognition

Junxin Yan1,§Qian Li3,§Tianle Zeng1Qi Gao4Xueqi Guo2Yonghao Sun2Kun Ye2( )Zhiyan Jia2Bingchao Yang5( )Anmin Nie1Lixuan Liu6( )Congpu Mu1( )Shouguo Wang3
Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science & Technology, Hebei Key Laboratory of Microstructure Materials Physics, Yanshan University, Qinhuangdao 066004, China
School of Electronics and Information Engineering, Institute of Quantum Materials and Devices, State Key Laboratory of Separation Membrane and Membrane Processes, Tiangong University, Tianjin 300387, China
Anhui Provincial Key Laboratory of Magnetic Functional Materials and Devices, School of Materials Science and Engineering, Anhui University, Hefei 230601, China
School of Materials Engineering, Shanxi College of Technology, Shuozhou 036000, China
Key Laboratory of Quantum Materials under Extreme Conditions in Shandong Province, School of Physics and Physical Engineering, Qufu Normal University, Qufu 273165, China
Department of Physics, School of Science, Tianjin University, Tianjin 300350, China

§ Junxin Yan and Qian Li contributed equally to this work.

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Abstract

Being able to probe the polarization states in low-symmetry two-dimensional (2D) crystals is crucial for applications in polarization-encoded encryption and decryption. However, their polarization sensitivity is restricted by the inherent optical anisotropy. Here, we demonstrate a strategy where black phosphorus (BP) is stacked on Nb2SiTe4 to form a van der Waals heterostructure, realizing a self-powered, broadband, and highly polarization-sensitive photodetector. The atomically sharp and clean interface of BP/Nb2SiTe4 heterostructures forms a strong built-in electric field, which facilitates the separation of electron–hole pairs. Furthermore, angle-dependent Raman and absorption intensities reveal significant anisotropic optical response. The BP/Nb2SiTe4 photodetector exhibits a rapid response time and broadband detection capability from 360 to 2200 nm due to the efficient charge separation and strong interlayer coupling at the heterostructure interface. Notably, the BP/Nb2SiTe4 device also exhibits a large dichroic ratio (10.4) at zero voltage under 2200 nm light illumination. Furthermore, the proof-of-concept BP/Nb2SiTe4 photodetector possesses polarization-resolved imaging and polarization-encoded encryption/decryption capabilities, providing new insights for achieving low-power and multifunctional polarization-sensitive photodetectors.

Graphical Abstract

A novel low-symmetry two-dimensional heterojunction (BP/Nb2SiTe4) is fabricated. This heterojunction photodetector features a broadband detection range of 360–2200 nm and a high dichroic ratio of 10.4, and it also achieves polarization-resolved imaging as well as polarization-encoded encryption and decryption functions, thus providing a new direction for the development of low-power and multifunctional polarization-sensitive photodetectors.

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Nano Research
Article number: 94908772

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Cite this article:
Yan J, Li Q, Zeng T, et al. Self-driven and ultrabroadband polarized photoresponse in BP/Nb2SiTe4 heterostructures for selective polarization-based encryption-decryption and recognition. Nano Research, 2026, 19(9): 94908772. https://doi.org/10.26599/NR.2026.94908772

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Received: 26 February 2026
Revised: 07 April 2026
Accepted: 24 April 2026
Published: 07 July 2026
© The Author(s) 2026. Published by Tsinghua University Press.

This is an open access article under the terms of the Creative Commons Attribution 4.0 International License (CC BY 4.0, https://creativecommons.org/licenses/by/4.0/).