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Research Article | Open Access

Intrinsic field-free superconducting diode effect in a simple van der Waals FeSe nanosheet

Yechao Han1,2,§Guojing Hu1,2,§Zouyouwei Lu1,2Senhao Lv2Zhen Zhao2Jie Liu1,2Jinan Shi1Hui Guo2Lihong Bao1,2Xiaoli Dong2Wu Zhou1Haitao Yang1,2 ( )Xiao Lin1 ( )Hong-jun Gao1,2( )
School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

§ Yechao Han and Guojing Hu contributed equally to this work.

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Abstract

Superconducting diodes, characterized by the unidirectional supercurrent flow, are essential components for constructing energy-efficient superconducting circuits. Although the superconducting diode effect has been reported in a wide variety of platforms, its implementation usually requires an external magnetic field, cryogenic temperatures and elaborate device geometries, which significantly limit practical applications. Here, we report an intrinsic, field-free superconducting diode effect in a simple van der Waals FeSe nanosheet. Systematic investigations of sample geometries, residual magnetic fields, Joule heating effects, random vortex trappings, and electrodes or interfacial contacts reveal that the field-free superconducting diode effect originates from the time-reversal-symmetry breaking in the superconducting state of the FeSe nanosheet. The intrinsic field-free superconducting diode effect provides strong evidence of time-reversal-symmetry breaking in FeSe nanosheets. Furthermore, the field-free superconducting diode manifests a stable half-wave rectification performance after the 400-cycle operation and maintains the same polarity over a wide range of both positive and negative magnetic fields, which can tolerate ubiquitous stray fields in electrical circuits. The intrinsic field-free superconducting diode effect in a single van der Waals FeSe nanosheet with a simplified device architecture holds considerable promise for paving the way to practical, scalable superconducting diodes in ultra-low-power electronics.

Graphical Abstract

An intrinsic, field-free superconducting diode effect was observed in a simple van der Waals FeSe nanosheet, and systematic investigations reveal that the field-free superconducting diode effect originates from the time-reversal symmetry breaking in the superconducting state of the FeSe nanosheet. The intrinsic field-free superconducting diode effect in a single van der Waals FeSe nanosheet with a simplified device architecture holds considerable promise for paving the way to practical, scalable superconducting diodes in ultra-low-power electronics.

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Nano Research
Article number: 94908621

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Cite this article:
Han Y, Hu G, Lu Z, et al. Intrinsic field-free superconducting diode effect in a simple van der Waals FeSe nanosheet. Nano Research, 2026, 19(7): 94908621. https://doi.org/10.26599/NR.2026.94908621

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Received: 12 January 2026
Revised: 04 March 2026
Accepted: 06 March 2026
Published: 22 May 2026
© The Author(s) 2026. Published by Tsinghua University Press.

This is an open access article under the terms of the Creative Commons Attribution 4.0 International License (CC BY 4.0, https://creativecommons.org/licenses/by/4.0/).