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Research Article | Open Access

High-endurable memristors based on ReSe2/BST:YSZ ferroelectric heterojunctions for optical encryption communication

Runyao Lin1,§Weidong Sun1,§Jinhai Chen1,§Jia Zhang1Kangbo Zhao1Zelei Jiao1Haoning Liu1Jiawei Zhang2( )Pan Liu1( )Hong Wang1( )
Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, School of Electronic and Information Engineering, Hebei University, Baoding 071002, China
Hebei Blockchain Digital Asset Technology Innovation Center, Hebei Software Institute, Baoding 071002, China

§ Runyao Lin, Weidong Sun, and Jinhai Chen contributed equally to this work.

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Abstract

Due to the increasing awareness of space security, encrypted space optic-communication has attracted significant attention. Consequently, ferroelectric memristors with efficient data processing capability and high operational stability become essential. However, inorganic perovskite materials such as Ba0.6Sr0.4TiO3 (BST) typically respond only to near-ultraviolet light, exhibiting relatively weak photo-response currents. In this work, we introduce a two-dimensional ReSe2/BST:YSZ (BST doped with (ZrO2)0.92(Y2O3)0.08) hetero-memristor that demonstrates robust photoelectric capability. The heterostructure achieves visible-light perception through the ferroelectric modulation of ReSe2 by BST:YSZ, resulting in an optical current switching of up to 50 μA. The device exhibits excellent endurance, maintaining stable optical switching over 30,000 cycles, and enables the simulation implementation of optical logic gates (AND, OR, XNOR, XOR and ODD checker) suitable for airborne information encryption and transmission. Moreover, the hetero-memristor emulates synapse-like regulation behaviors, including transitions between synaptic facilitation and depression under paired-pulse stimulation, and plasticity evolution from long-term potentiation to long-term depression under continuous stimulation. Based on these properties, an optical encryption communication system is demonstrated, achieving a recognition accuracy of up to 99.8%. This work provides a new approach toward integrating photovoltaic and ferroelectric functionalities for secure space communication applications.

Graphical Abstract

This work presents a two-dimensional ReSe2/ferroelectric BST:YSZ (Ba0.6Sr0.4TiO3 doped (ZrO2)0.92(Y2O3)0.08) ferroelectric heterostructure that exhibits the nonvolatile switching behavior and robust photodetection behavior by utilizing the switchable ferroelectric polarization of BST:YSZ, which could realize the large optical response current (50 A) and the endurance of the 30,000+ cycles optic-switching. Based on this, the construction of optical logic gates can enable their application in space optical encryption communication systems. And the final recognition rate can reach 99.8%

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Nano Research
Article number: 94908594

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Cite this article:
Lin R, Sun W, Chen J, et al. High-endurable memristors based on ReSe2/BST:YSZ ferroelectric heterojunctions for optical encryption communication. Nano Research, 2026, 19(6): 94908594. https://doi.org/10.26599/NR.2026.94908594
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Received: 15 December 2025
Revised: 12 February 2026
Accepted: 23 February 2026
Published: 06 May 2026
© The Author(s) 2026. Published by Tsinghua University Press.

This is an open access article under the terms of the Creative Commons Attribution 4.0 International License (CC BY 4.0, https://creativecommons.org/licenses/by/4.0/).