AI Chat Paper
Note: Please note that the following content is generated by AMiner AI. SciOpen does not take any responsibility related to this content.
{{lang === 'zh_CN' ? '文章概述' : 'Summary'}}
{{lang === 'en_US' ? '中' : 'Eng'}}
Chat more with AI
PDF (14.8 MB)
Collect
Submit Manuscript AI Chat Paper
Show Outline
Outline
Show full outline
Hide outline
Outline
Show full outline
Hide outline
Research Article | Open Access

A sensing-storage monolithically integrated system based on P3HT OTFT for wearable physiological sensing

Yuwen Li1,§Qiang Li1,§ ( )Lifeng Ding2Yuanzheng Cao1Hui Gao1Jianan Ma1Tsuyoshi Minami3 ( )Shengbo Sang1 ( )
Shanxi Key Laboratory of Artificial Intelligence & Micro Nano Sensors, College of Integrated Circuits, Taiyuan University of Technology, Taiyuan 030024, China
Department of Chemistry and Chemical Engineering, Taiyuan Institute of Technology, Taiyuan 030008, China
Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan

§ Yuwen Li and Qiang Li contributed equally to this work.

Show Author Information

Abstract

Wearable health monitoring systems require seamless integration of sensing and memory functionalities for real-time physiological signal acquisition and processing. However, conventional approaches relying on hybrid integration of rigid silicon-based memory with flexible sensors suffer from mechanical mismatch and complex interfacing, limiting their practicality in continuous physiological monitoring. Here, we present a sensing-storage monolithically integrated system fabricated through low-cost solution spin-coating, which combines a flexible floating-gate organic thin-film transistor (FG-OTFT) memory with an OTFT pressure sensor. The pressure sensor exhibits a wide operating range of 0–40 kPa, a fast response time of 34 ms, and stable performance after 5000 bending cycles and over temperatures from −20 to 60 °C. When conformally attached to the finger joint, wrist, and human throat, the device delivers distinct current variations that faithfully track joint bending angles and intermittent coughing. The integrated floating-gate memory exhibits a large memory window of 18 V under ±80 V program/erase biases, a retention time exceeding 105 s, and robust operation after 3000 bending cycles. A 1 × 9 memory array is used to store 7-bit ASCII-encoded characters with two additional check bits, and the stored information is wirelessly transmitted via Bluetooth low energy to a mobile application. Comparative analysis shows that the integrated system offers a shorter response time and longer data retention than previously reported OTFT-based pressure sensors and organic memories used for physiological monitoring. These results highlight a low-cost, fully flexible, and application-oriented platform for wearable electronic skins capable of simultaneous physiological sensing, data storage, and intuitive visual readout.

Graphical Abstract

This study presents a sensing-storage monolithically integrated system fabricated via solution processing. By integrating a flexible floating gate organic thin-film transistor (OTFT) memory with a pressure sensor, the system achieves direct encoding of analog signals into digital ASCII codes. The stored data is wirelessly transmitted and visualized on a mobile interface, demonstrating a sustainable pathway for intelligent flexible electronics.

Electronic Supplementary Material

Download File(s)
8532_ESM.pdf (1.1 MB)

References

【1】
【1】
 
 
Nano Research
Article number: 94908532

{{item.num}}

Comments on this article

Go to comment

< Back to all reports

Review Status: {{reviewData.commendedNum}} Commended , {{reviewData.revisionRequiredNum}} Revision Required , {{reviewData.notCommendedNum}} Not Commended Under Peer Review

Review Comment

Close
Close
Cite this article:
Li Y, Li Q, Ding L, et al. A sensing-storage monolithically integrated system based on P3HT OTFT for wearable physiological sensing. Nano Research, 2026, 19(6): 94908532. https://doi.org/10.26599/NR.2026.94908532
Topics:

1026

Views

148

Downloads

0

Crossref

0

Web of Science

0

Scopus

0

CSCD

Received: 24 December 2025
Revised: 01 February 2026
Accepted: 03 February 2026
Published: 29 April 2026
© The Author(s) 2026. Published by Tsinghua University Press.

This is an open access article under the terms of the Creative Commons Attribution 4.0 International License (CC BY 4.0, https://creativecommons.org/licenses/by/4.0/).